TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR (VDD = 3 V) = 5.1 V/μs (typ.) • The power supply operation range is: VDD = ±0.9~3.5 V or 1.8~7 V • Low supply current: IDD (VDD = 3 V) = 330 μA (typ.) • The internally phase compensated operational amplifier. • Small package TC75S60FU Weight SSOP5-P-0.95 SSOP5-P-0.65A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDD, VSS 7 V DVIN ±7 V Input voltage VIN VDD~VSS V Power dissipation PD 200 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Supply voltage Differential input voltage : 0.014 g (typ.) : 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC75S60F/FU Marking (top view) 5 Pin Connection (top view) VDD OUT 4 5 4 3 1 IN (+) SH 1 2 2 VSS 3 IN (−) Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO ⎯ II Characteristics Input bias current Common mode input voltage Test Condition Min Typ. Max Unit ⎯ 2 7 mV ⎯ ⎯ 1 ⎯ pA ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN 2 ⎯ 0.0 ⎯ 2.1 V dB RS = 1 kΩ GV ⎯ 60 70 ⎯ VOH 3 RL = 100 kΩ 2.9 ⎯ ⎯ VOL 4 RL = 100 kΩ ⎯ ⎯ 0.1 Common mode rejection ratio CMRR 2 VIN = 0.0~2.1 V 54 70 ⎯ dB Supply voltage rejection ratio SVRR 1 VDD = 1.8~7.0 V 60 70 ⎯ dB Supply current IDD 5 ⎯ ⎯ 330 500 μA Source current Isource 6 ⎯ 330 700 ⎯ μA Isink 7 ⎯ 600 1250 ⎯ μA Min Typ. Max Unit ⎯ 2 7 mV Voltage gain (open loop) Maximum output voltage Sink current ⎯ V DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA II ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN 2 ⎯ 0.3 ⎯ 0.9 V GV ⎯ ⎯ ⎯ 70 ⎯ dB VOH 3 RL = 100 kΩ 1.7 ⎯ ⎯ VOL 4 RL = 100 kΩ ⎯ ⎯ 0.1 CMRR 2 VIN = 0.3~0.9 V 50 60 ⎯ dB Supply current IDD 5 ⎯ ⎯ 300 450 μA Source current Isource 6 ⎯ 300 600 ⎯ μA Isink 7 ⎯ 550 1150 ⎯ μA Characteristics Input bias current Common mode input voltage Voltage gain (open loop) maximum output voltage Common mode rejection ratio Sink current Test Condition RS = 10 kΩ 2 V 2007-11-01 TC75S60F/FU AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 5.1 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 3.7 ⎯ MHz Characteristics AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 4.0 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 3.0 ⎯ MHz Characteristics Test Circuit 1. SVRR, VIO • VDD SVRR VDD = 1.8 V: VDD = VDD1, VOUT = VOUT1 VDD = 7.0 V: VDD = VDD2, VOUT = VOUT2 RF ⎛ V 1 − V OUT 2 RS SVRR = 20 log ⎜ OUT × ⎜ V 1− V 2 RF + RS DD DD ⎝ RS ⎞ ⎟ ⎟ ⎠ VOUT • VIO RF RS ⎛ RS VDD ⎞ ⎟× VIO = ⎜⎜ V OUT − 2 ⎟⎠ RF + RS ⎝ VDD/2 2. CMRR, CMVIN VDD • CMRR VIN = 0.0 V: VIN = VIN1, VOUT = VOUT1 VIN = 2.1 V: VIN = VIN2, VOUT = VOUT2 RF ⎛ V 1 − V OUT 2 RS CMRR = 20 log ⎜ OUT × ⎜ RF + RS 1 − VIN 2 V IN ⎝ RS VOUT RS RF VIN • ⎞ ⎟ ⎟ ⎠ CMVIN VDD/2 3 2007-11-01 TC75S60F/FU 3. VOH VDD • VOH VDD − 0.05 V 2 VIN2 = VDD + 0.05 V 2 RL VOH VIN1 = VIN1 VIN2 4. VOL VDD • VOL VDD + 0.05 V 2 VIN2 = VDD − 0.05 V 2 RL VIN1 = VOL VIN1 VIN2 5. IDD VDD M IDD VDD/2 6. Isource 7. Isink VDD VDD M M VDD 2 4 VDD − 0.1 V 2 2007-11-01 TC75S60F/FU Isink – VDD IDD – VDD 2.0 500 Ta = −40°C Sink current Isink Supply current IDD (A) (mA) Ta = 85°C Ta = 25°C 250 1.6 Ta = −40°C 1.2 Ta = 25°C Ta = 85°C 0.8 0.4 VSS = GND VSS = GND VIN = VDD/2 0 0 1 2 3 4 Supply voltage 5 VDD 6 0 0 7 1 2 3 Supply voltage (V) VOL – Isink 4 5 VDD (V) 3 Ta = 85°C Ta = 85°C (V) 1.6 Output voltage VOL (V) 7 VOL – Isink 2.0 Output voltage VOL 6 Ta = 25°C 1.2 Ta = −40°C 0.8 0.4 2 Ta = 25°C Ta = −40°C 1 VDD = 1.8 V VDD = 3 V VSS = GND 0 0 0.5 1.0 Sink current Isink VSS = GND 0 0 1.5 0.5 (mA) 1.0 Sink current Isink VOL – Isink 1.5 (mA) Isource – VDD 1.5 5 VDD = 5 V (mA) Ta = 85°C Source current Isource Output voltage VOL (V) VSS = GND 4 Ta = 25°C 3 Ta = −40°C 2 1 1.0 Ta = 85°C Ta = 25°C Ta = −40°C 0.5 VSS = GND 0 0 0.5 Sink current Isink 1.0 0 0 1.5 (mA) 1 2 3 Supply voltage 5 4 VDD 5 6 7 (V) 2007-11-01 TC75S60F/FU VOH – Isource VOH – Isource 3 2.5 (V) 1.6 Output voltage VOH Output voltage VOH (V) 2.0 1.2 0.8 Ta = −40°C Ta = 85°C Ta = 25°C 0.4 Ta = −40°C Ta = 85°C Ta = 25°C VDD = 1.8 V VDD = 3 V VSS = GND 0 0 0.5 Source current Isource 0 0 1 VSS = GND 0.5 Source current Isource (mA) VOH – Isource (mA) VOH – RL 2 (V) (V) 5 Ta = −40°C Output voltage VOH Output voltage VOH 1 Ta = 85°C 2.5 Ta = 25°C 1 Ta = 85°C Ta = −40°C Ta = 25°C VDD = 5 V VDD = 1.8 V VSS = GND VSS = GND 0 0 0.5 Source current Isource 0 100 1 (mA) 1k 10 k Load resistance RL VOH – RL 100 k 1M (Ω) VOH – RL 3 5 Ta = 85°C Output voltage VOH Output voltage VOH (V) (V) 2.5 Ta = −40°C Ta = 25°C Ta = 85°C Ta = −40°C 2.5 Ta = 25°C VDD = 5 V VDD = 3 V 0 100 VSS = GND VSS = GND 1k 10 k Load resistance RL 100 k 0 100 1M (Ω) 1k 10 k Load resistance RL 6 100 k 1M (Ω) 2007-11-01 TC75S60F/FU Pulse response (rise) Pulse response (fall) 1.1 1.1 Input waveform 0.9 0.9 Ta = 85°C 0.7 0.5 Voltage Ta = 25°C Output waveform 0.3 Ta = −40°C (V) (V) 0.5 Voltage Output waveform 0.7 Ta = −40°C 0.1 Ta = 25°C 0.3 Input waveform Ta = 85°C 0.1 0 0 VDD = 1.8 V VSS = GND 0 100 200 300 400 VDD = 1.8 V VSS = GND 0 100 200 300 400 Time t (ns) Time t (ns) Pulse response (rise) Pulse response (fall) 3 3 VDD = 3 V VSS = GND Input waveform 2 2 (V) (V) Ta = 85°C Ta = −40°C Voltage Voltage Output waveform Ta = 25°C 1 Ta = −40°C 1 Ta = 25°C Ta = 85°C Output waveform 0 0 200 0 VDD = 3 V VSS = GND 400 600 Input waveform 800 0 200 Time t (ns) 400 600 800 Time t (ns) Pulse response (rise) Pulse response (fall) 6 6 VDD = 5 V VSS = GND Input waveform 4 4 (V) Ta = −40°C Ta = 25°C Voltage Voltage (V) Ta = 85°C 2 Output waveform 2 Ta = −40°C Ta = 25°C Ta = 85°C Output waveform 0 0 VDD = 5 V VSS = GND 0 0.4 0.8 1.2 Input waveform 1.6 0 Time t (μs) 0.4 0.8 1.2 1.6 Time t (μs) 7 2007-11-01 TC75S60F/FU GV – f PD – Ta 120 300 When the IC is mounted on a PCB, the power dissipation may be higher than the values shown below. Power dissipation varies according to the PCB. VDD = 3 V (mW) VSS = GND 80 Power dissipation PD Voltage gain GV (dB) Ta = 25°C 40 0 10 100 1k 10 k 100 k 1M 200 100 0 −40 10 M Frequency f (Hz) 0 40 80 120 Ambient temperature Ta (°C) 8 2007-11-01 TC75S60F/FU Package Dimensions Weight: 0.014 g (typ.) 9 2007-11-01 TC75S60F/FU Package Dimensions Weight: 0.006 g (typ.) 10 2007-11-01 TC75S60F/FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-11-01