TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 5.4 mΩ (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage V VGSS ±20 DC (Note 1) ID 13 Pulse (Note 1) IDP 52 Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 220 mJ Avalanche current IAR 13 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8003 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 52.1 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8003 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 13 A Note 4: Reptitve rating: pulse width limited by maximum channel temperature Note 5: ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPC8003 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−off current IDSS VDS = 30 V, VGS = 0 V — — 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 — — V V (BR) DSX ID = 10 mA, VGS = −20 V 15 — — V Vth VDS = 10 V, ID = 1 mA 0.8 — 2.5 V Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance RDS (ON) VGS = 4 V, ID = 6.5 A — 8.3 13 mΩ RDS (ON) VGS = 10 V, ID = 6.5 A — 5.4 7 mΩ |Yfs| VDS = 10 V, ID = 6.5 A 10.5 21 — S — 4380 — — 500 — Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 890 — tr — 14 — ton — 27 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf — 72 — toff — 235 — Total gate charge (Gate−source plus gate−drain) Qg — 90 — Gate−source charge Qgs — 60 — Gate−drain (“miller”) charge Qgd — 30 — Turn−off time VDD ≈ 24 V, VGS = 10 V, ID = 13 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — 52 A — — −1.2 V VDSF IDR = 13 A, VGS = 0 V 3 2004-07-06 TPC8003 4 2004-07-06 TPC8003 5 2004-07-06 TPC8003 6 2004-07-06 TPC8003 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06