TA8246AHQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8246AHQ Dual Audio Power Amplifier 6 W × 2 Ch TA8246AHQ is dual power amplifier for Consumer applications. This IC provides an output power of 6 watts per channel (at VCC = 20 V, f = 1 kHz, THD = 10%, RL = 8 Ω). It is suitable for power amplifier of TV and home Stereo. Features • : High output power: Pout = 6 W (Typ.) • Built-in audio muting circuit. • NF terminal capacitor less (VCC = 20 V, RL = 8 Ω, f = 1 kHz, THD = 10%) : • Weight: 4.04 g (typ.) Fixed gain (Gv = 34dB), needless external capacitor. Protectors : Thermal shut down protection circuit, over voltage protection circuit • Low poping noise • High THD ratio • High input dynamic range • Available for using same PCB layout with 3 channel IC: TA8256BHQ • Operating supply voltage range : VCC (opr) = 10~30 V (Ta = 25°C) 1 2004-07-12 TA8246AHQ Block Diagram VCC 6 RIPPLE FILTER 9 Amp 1 OUT1 350 Ω 8 RL 20 kΩ 3 Pre-GND V18 2.1 V 4 30 kΩ 4 kΩ INPUT1 PW-GND 10 RL 20 kΩ 350 Ω Amp 2 4 kΩ 2 OUT2 12 30 kΩ INPUT2 5 7 MUTE SW 2 MUTE T.C. 2004-07-12 TA8246AHQ Terminal Explanation Terminal No. Symbol Function Equivalent Circuit VCC 2 IN2 30 kΩ Input 20 kΩ OUT 350 Ω 4 kΩ 2/4 NF へ 4 IN1 GND 3 Pre-GND ⎯ GND terminal VCC 5 MUTE SW 7 7 to MUTE Amplifier 10 kΩ MUTE control terminal 5 MUTE T.C. 10 kΩ GND 6 R/F to POP-NOIZE preventive circuit Ripple filter to Bias circuit 5.1 kΩ 6 VCC 8 OUT1 Output 2.2 kΩ 12 8/12 OUT2 GND 9 VCC Supply voltage terminal ⎯ 10 PW-GND GND terminal ⎯ 1, 11: NC 3 2004-07-12 TA8246AHQ Cautions This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak. Please set the IC keeping the distance from CRT. Maximum Ratings (Ta = 25°C) Characteristic Supply voltage Output current (peak/ch) Power dissipation Symbol Rating Unit VCC 30 V IO (peak) 2 A PD (Note) 25 W Operating temperature Topr −20~75 °C Storage temperature Tstg −55~150 °C Note: Derated above Ta = 25°C in the proportion of 200 mW/°C. Electrical Characteristics (Unless otherwise specified, VCC = 20 V, RL = 8 Ω, Rg = 620 Ω, f = 1 kHz, Ta = 25°C) Symbol Test Circuit ICCQ ⎯ Vin = 0 Pout (1) ⎯ THD = 10% 5 6 ⎯ Pout (2) ⎯ THD = 1% ⎯ 4.5 ⎯ THD (1) ⎯ Pout = 2 W ⎯ 0.04 0.2 THD (2) ⎯ Pout = 2 W, f = 10 kHz, ⎯ 0.1 0.6 Voltage gain Gv ⎯ Vout = 0.775 Vrms 32.5 34 35.5 dB Input resistance RIN ⎯ ⎯ 34 ⎯ kΩ Ripple rejection ratio R.R. ⎯ f = 100 Hz −40 −47 ⎯ dB Output noise voltage Vno ⎯ Rg = 10 kΩ, BW = 20 Hz~20 kHz ⎯ 0.14 0.3 mVrms Cross talk C.T. ⎯ Rg = 10 kΩ, Vout = 0.775 Vrms ⎯ −60 ⎯ dB Vth (ON) ⎯ MUTE ON 3.1 ⎯ VCC Vth (OFF) ⎯ MUTE OFF 0 ⎯ 2.5 ATT ⎯ Vout = 0.775 Vrms → Mute −52 −60 ⎯ Characteristic Quiescent current Output power Total harmonic distortion Mute control voltage Mute attenuation level Test Condition ⎯ 4 Min. Typ. Max Unit 50 85 130 mA W % V dB 2004-07-12 TA8246AHQ 6 RIPPLE FILTER 9 VCC 1000 µF 100 µF Test Circuit 4 kΩ 1000 µF 20 kΩ 3 Pre-GND V18 2.2 Ω 20 kΩ 350 Ω Amp 2 4 kΩ OUT2 5 12 1000 µF 7 MUTE SW 5 10 µF 1.0 µF 2 RL 30 kΩ INPUT2 RL PW-GND 10 0.10 µF 350 Ω 0.10 µF OUT1 8 2.2 Ω Amp 1 2.1 V 1.0 µF 4 30 kΩ INPUT1 MUTE T.C. 2004-07-12 TA8246AHQ ICCQ, Vout (DC) – VCC THD – f 20 10 (%) 200 16 Vout 120 12 ICCQ 80 8 4 40 Total harmonic distortion THD 160 Output voltage Vout (DC) (V) Quiescent current ICCQ (mA) VIN = 0 VCC = 20 V 5 Pout = 2 W 3 RL = 8 Ω 1 0.5 0.3 0.1 0.05 0.03 0.01 30 0 0 4 8 12 16 20 Supply voltage 24 VCC 28 32 100 0 36 300 30 k 100 k (Hz) THD – Pout 30 VCC = 20 V f = 1 kHz RL = 8 Ω RL = 8 Ω 10 5 5 (%) 10 3 Total harmonic distortion THD (%) 10 k (V) THD – Pout Total harmonic distortion THD 3k Frequency f 30 1 0.5 0.3 0.1 1k f = 10 kHz 0.05 3 VCC = 12 V 20 28 1 0.5 0.3 0.1 0.05 f = 1 kHz 0.03 0.03 f = 100 Hz 0.01 0.01 0.3 0.5 1 Output Power 3 5 Pout 10 30 0.3 (W) 0.5 1 Output Power 6 3 5 Pout 10 30 (W) 2004-07-12 TA8246AHQ Pout – VCC Gv – f 70 f = 1 kHz 18 RL = 8 Ω THD = 10% 16 Gv (dB) VCC = 20 V 60 Vout = 0.775 Vrms RL = 8 Ω 14 12 10 Voltage gain Output power Pout (W) 20 8 6 50 40 30 20 4 10 2 0 0 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Supply voltage VCC 30 100 (V) 300 R.R. – f 30 k 100 k 30 k 100 k 30 k 100 k (Hz) C.T. – f VCC = 20 V RL = 8 Ω −10 R = 0 g Vripple = 0.775 Vrms −20 Cross talk C.T. (dB) (dB) R.R. Ripple rejection ratio 10 k 0 −30 −40 −50 −60 VCC = 20 V RL = 8 Ω −10 V out = 0.775 Vrms Rg = 10 kΩ −20 −30 −40 −50 −60 −70 −70 30 100 300 1k 3k Frequency f 10 k 30 k 100 k 30 100 (Hz) 300 1k 3k Frequency f Vno – Rg 10 k (Hz) R.R. – Rg 1.6 0 R.R. (dB) VCC = 20 V 1.4 RL = 8 Ω BW = 20 Hz~20 kHz 1.2 1.0 Ripple rejection ratio (mVrms) 3k Frequency f 0 Output noise voltage Vno 1k 0.8 0.6 0.4 0.2 VCC = 20 V RL = 8 Ω −10 f ripple = 100 Hz Vripple = 0.775 Vrms −20 −30 −40 −50 −60 −70 0 30 100 300 1k 3k 10 k 30 k 100 k 30 Signal source resistance Rg (Ω) 100 300 1k 3k 10 k Signal source resistance Rg (Ω) 7 2004-07-12 TA8246AHQ C.T. – Rg PD – Pout 18 (W) VCC = 20 V f = 1 kHz −10 R = 8 Ω L Vout = 0.775 Vrms −20 Power dissipation PD Cross talk C.T. (dB) 0 −30 −40 −50 Dual 16 f = 1 kHz RL = 8 Ω 14 12 V CC = 28 V THD = 1% 10 10% 8 20 V 6 4 12 V −60 2 −70 30 100 300 1k 3k 10 k 30 k 0 0 100 k 2 4 Signal source resistance Rg (Ω) 6 8 10 Output power Pout f = 1 kHz 160 RL = 8 Ω 16 14 12 VCC = 20 V VIN = 0 140 120 100 10 8 6 4 80 60 40 20 2 0 8 12 16 20 Supply voltage 24 VCC 28 0 −40 32 −20 0 Vno – Ta (%) Total harmonic distortion THD (mVrms) Rg = 10 kΩ 0.6 0.5 0.4 0.3 0.2 0.1 0 −40 −20 0 20 40 40 60 80 100 80 100 THD – Ta 10 VCC = 20 V 0.7 20 Ambient temperature Ta (°C) (V) 0.8 Output noise voltage Vno 16 180 ICCQ (mA) 18 14 ICCQ – Ta 20 Quiescent current Maximum power dissipation PD MAX (W) PD MAX – VCC 12 (W) 60 80 5 3 Ambient temperature Ta (°C) f = 1 kHz Pout = 2 W Dual 1 0.5 0.3 0.1 0.05 0.03 0.01 −40 100 VCC = 20 V RL = 8 Ω −20 0 20 40 60 Ambient temperature Ta (°C) 8 2004-07-12 TA8246AHQ Allowable power dissipation PD MAX (W) PD MAX – Ta 30 1: Infinite heat sink 2: 4.1°C/W heat sink 1 25 3: 9.5°C/W heat sink 20 2 15 3 10 5 0 0 25 50 75 100 125 150 175 200 Ambient temperature Ta (°C) 9 2004-07-12 TA8246AHQ Package Dimensions Weight: 4.04 g (typ.) 10 2004-07-12 TA8246AHQ About solderability, following conditions were confirmed • Solderability (1) Use of Sn-63Pb solder Bath · solder bath temperature = 230°C · dipping time = 5 seconds · the number of times = once · use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath · solder bath temperature = 245°C · dipping time = 5 seconds · the number of times = once · use of R-type flux RESTRICTIONS ON PRODUCT USE 030619EBF • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 11 2004-07-12