TA8216HQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8216HQ Dual Audio Power Amplifier The TA8216HQ is dual audio power amplifier for consumer applications. This IC provides an output power of 13 watts per channel (at VCC = 28V, f = 1kHz, THD = 10%, RL = 8 Ω). It is suitable for power amplifier of music center. Features • High output power: Pout = 13 W/channel (Typ.) • Low noise: Vno = 0.14 mVrms (Typ.) (VCC = 28 V, RL = 8 Ω, f = 1 kHz, THD = 10%) Weight: 4.04 g (typ.) (VCC = 28 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ, BW = 20 Hz~20 kHz) • Very few external parts. • Built in audio muting circuit. • Built in thermal shut down protector circuit. • Operation supply voltage range (Ta = 25°C) : VCC (opr) = 10~37 V (RL = 8 Ω) : VCC (opr) = 10~24 V (RL = 4 Ω) 1 2004-08-25 TA8216HQ Block Diagram VCC 6 Ripple Filter IN1 4 9 VCC IN1 OUT1 AMP1 5 3 1 400 Ω RL 20 kΩ Pre-GND 400 Ω PW-GND 10 20 kΩ RL AMP2 IN2 2 7 OUT2 IN2 8 12 11 Application Information 1. Voltage gain The closed loop voltage gain is determined by R1, R2. Input G V = 20 log Output 4/2 R1 + R 2 (dB) R2 5/1 20 kΩ + 400 Ω = 20log 400 Ω = 34 (dB) 7/12 R2 R1 400 Ω 20 kΩ Figure 1 G V = 20 log R1 + R 2 + R 3 (dB) R2 + R3 When R3 = 220 Ω GV ∼ − 30 (dB) is given. Input Output 4/2 R3 5/1 7/12 R2 R1 400 Ω 20 kΩ Figure 2 2 2004-08-25 TA8216HQ 2. Muting (1) (2) Audio muting This IC is possible to make audio muting operation by using 11 pin muting terminal. In Fig.3, the equivalent circuit in the muting circuit section is shown. By means of reducing the voltage of 11 pin down to 2.8 V or less in Fig.3, Q1 is turned ON and the base voltage of Q2 in the differential circuit fabricated with Q2 and Q3. Therefore, with the voltage reduction of 11 pin, the input circuits of dummy of input terminal and that in the doted line operate and cut-off the input signal. After muting, the bias circuit continues 1st operation and the power supply current of quiescent time. 8 pin, the capacitor terminal for reducing the pop noise can reduce the pop noise through making the time constant longer by means of inserting the capacitor externary. In the care this terminal is not used, short 8 pin with 11 pin. The voltage of 11 pin set up to 4 V or more. IC internal muting at VCC OFF When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage of Q1 is reduced and the muting operation is mode. 9 Reference voltage I1 I2 I3 The detection circuit at VCC → OFF Q6 I5 I6 20 kΩ Q4 Q5 7/12 OUT 400 Ω D2 1 kΩ 100 Ω D1 Q2 Q3 Q1 11 I4 VCC 8 Mute 2/4 1/5 IN NF Figure 3 3. Precaution for 4 Ω load resistance use Internal output current detection and protection circuit protect the IC from the influence of unusual excess current. And this function causes the interrupted sound in case of excess input voltage with VCC higher than recommended supply voltage (24V). Therefore, the power supply regulation must be fully investigated so as not to make the VCC be high than recommendation supply voltage (24V). Cautions This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak. Please set the IC keeping the distance from CRT. 3 2004-08-25 TA8216HQ Standard PCB TA8216H (Bottom View) 4 2004-08-25 TA8216HQ Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCC 40 V IO (peak) 3.0 A PD (Note) 25 W Supply voltage Output current (Peak/ch) Power dissipation Operation temperature Topr −20~75 °C Storage temperature Tstg −55~150 °C Note: Derated above Ta = 25°C in the proportion of 200 mW/°C. Electrical Characteristics (unless otherwise specified VCC = 28 V, RL = 8 Ω, Rg = 600 Ω, f = 1 kHz, Ta = 25°C) Symbol Test Circuit ICCQ ⎯ Pout (1) Pout (2) Min Typ. Max Unit Vin = 0 ⎯ 50 105 mA ⎯ THD = 10% 10 13 ⎯ ⎯ THD = 1% ⎯ 10 ⎯ Pout (3) ⎯ THD = 10%, VCC = 24 V, RL = 4 Ω ⎯ 13 ⎯ THD ⎯ Pout = 2 W ⎯ 0.04 0.2 % Voltage gain GV ⎯ Vout = 0.775 Vrms (0dBm) 32.5 34.0 35.5 dB Input resistance RIN ⎯ ⎯ 30 ⎯ kΩ Ripple rejection ratio R.R. ⎯ Rg = 0, fripple = 100 Hz Vripple = 0.775 Vrms (0dBm) −40 −50 ⎯ dB Output noise voltage Vno ⎯ Rg = 10 kΩ, BW = 20 Hz~20 kHz ⎯ 0.14 0.3 mVrms Cross talk C.T. ⎯ Rg = 10 kΩ, Vout = 0.775 Vrms (0dBm) ⎯ −70 ⎯ dB Vth 11 ⎯ 2.6 2.8 ⎯ V Characteristics Quiescent current Output power Total harmonic distortion Muting threshold voltege Test Condition ⎯ ⎯ W Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C) Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12 DC voltage (V) 1.6 20m GND 20m 1.6 9.4 13.0 5.0 VCC GND 2.8 13.0 5 2004-08-25 TA8216HQ IN1 OUT1 AMP1 5 3 1 400 Ω 20 kΩ Pre-GND 400 Ω 2.2 µF 2 1000 µF PW-GND 10 20 kΩ AMP2 IN2 7 OUT2 IN2 8 12 RL 0.12 µF 0.12 µF 4 2.2 Ω 2.2 µF 47 µF 47 µF IN1 9 2.2 Ω 6 Ripple Filter VCC 1000 µF 47 µF Test Circuit RL 1000 µF 11 *2 *1 Vth ∼ − 2.8 V (*1) Mute on at 11 pin low Vth 11 = 2.8 V (Typ.) VCC = 28 V, Ta = 25ºC (*2) The capacitor for reducing POP noise at mute ON. 6 2004-08-25 TA8216HQ THD – Pout VCC = 28 V RL = 8 Ω (%) 10 THD – Pout 20 5 Total harmonic distortion THD Total harmonic distortion THD (%) 20 3 1 0.5 0.3 f = 10 kHz 0.1 100 Hz 0.05 1 kHz f = 1 kHz RL = 8 Ω 5 3 VCC = 22 V 28 0.3 0.5 1 3 Output power 5 10 POUT 30 50 1 0.5 0.3 0.1 0.05 0 0.1 100 0.3 0.5 (W) VCC = 28 V Pout = 1 W RL = 8 Ω 10 POUT 30 50 100 (W) VCC = 28 V f = 1 kHz RL = 8 Ω 1 0.5 0.3 0.1 0.05 GV (dB) 70 60 Voltage gain (%) Total harmonic distortion THD 5 80 3 40 50 30 20 0.03 10 0.01 30 50 100 300 500 1k 3k 5k 10k Frequency f 0 30k 50k 100k 30 50 100 (Hz) R.R. – f 3k 5k 10k 30k 50k 100k (Hz) R.R. – Rg 0 R.R. −20 (dB) VCC = 28 V RL = 8 Ω Rg = 0 Ω Vripple = 0.775Vrms (0dBm) −10 Ripple rejection ratio −30 −40 −50 −60 −70 −80 300 500 1k Frequency f 0 (dB) 3 GV – f THD – f R.R. 1 Output power 5 Ripple rejection ratio 37 0.03 0.03 0.1 10 30 50 100 300 500 1k 3k 5k 10k Frequency f −20 −30 −40 −50 −60 −70 −80 30k 50k100k (Hz) VCC = 28 V RL = 8 Ω Vripple = 0.775Vrms (0dBm) fripple = 100 Hz −10 30 50 100 300 500 1k 3k 5k 10k Singnal source resistance Rg 7 30k 50k 100k (Ω) 2004-08-25 TA8216HQ C.T. – f C.T. – Rg 0 0 VCC = 28 V f = 1 kHz Vout = 0.775Vrms (0dBm) RL = 8 Ω Rg = 10 kΩ −20 −30 −40 −50 −60 −70 −80 VCC = 28 V f = 1 kHz RL = 8 Ω Vout = 0.775Vrms (0dBm) −10 Cross talk C.T. (dB) Cross talk C.T. (dB) −10 −20 −30 −40 −50 −60 −70 30 50 100 300 500 1k 3k 5k 10k Frequency f −80 30k 50k100k 30 50 100 (Hz) Singnal source resistance Rg Vno – Rg f = 1 kHz RL = 8 Ω/4 Ω THD = 10 % (W) 20 1.2 Output power Pout (mVrms) Output noise voltage VNO VCC = 28 V RL = 8 Ω 1.0 0.8 0.6 0.4 16 12 RL = 4 Ω 30 50 100 300 500 1k 3k 5k 10k 0 10 30k 50k100k 14 (Ω) 18 22 26 Supply voltage ICCQ, VOUT – VCC 30 VCC 34 38 42 (V) THD – Ta 240 32 16 VOUT 60 8 ICCQ 8 16 Supply voltage 24 VCC 32 Total harmonic distoriont THD 120 Output DC voltage VOUT (V) 24 ICCQ 180 (%) Vin = 0 (mA) 8 8 4 0.2 Singnal source resistance Rg Quiescent current (Ω) 24 1.4 0 0 30k 50k 100k Pout – VCC 1.6 0 3k 5k 10k 300 500 1k 0.2 (V) HEAT SINK 80 × 80 × 2 mm Aℓ (7ºC/W) 0.1 0.05 0.03 0.01 −40 0 VCC = 28 V f = 1 kHz Pout = 2 W RL = 8 Ω DUAL OPE. −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 8 2004-08-25 TA8216HQ Vno – Ta ICCQ – Ta (mVrms) VCC = 28 V RL = 8 Ω HEAT SINK 80 × 80 × 2 mm Aℓ (7ºC/W) 70 Output noise voltage VNO Quiescent current ICCQ (mA) 80 60 50 40 30 −40 −20 0 20 40 60 80 0.5 0.4 0.3 0.2 0.1 0 −40 100 VCC = 28 V RL = 8 Ω Rg = 10 kΩ HEAT SINK 80 × 80 × 2 mm Aℓ (7ºC/W) −20 Ambient temperature Ta (°C) 0 20 40 60 PD – Pout 24 f = 1kHz RL = 4 Ω DUAL Operation (W) THD = 1% Power dissipation PD Power dissipation PD (W) 24 VCC = 37 V 10% 16 12 28 V 8 23 V f = 1kHz RL = 8 Ω DUAL Operation 4 0 0 4 8 12 16 20 Output power Pout 24 28 20 VCC = 24 V 16 20 12 8 4 0 8 32 12 (W) 16 24 28 Output power Pout PD MAX – Ta (W) (w) 2: 4.1°C/W Aℓ HEAT SINK Maximum power dissipation PD MAX Allowable power dissipation PD MAX 1: INFINITE HEAT SINK 25 3: 9.5°C/W Aℓ HEAT SINK 20 2 15 10 3 5 0 0 25 50 75 100 125 20 32 36 40 (W) PD MAX – VCC 30 1 100 Ambient temperature Ta (°C) PD – Pout 20 80 150 175 Ambient temperature Ta (°C) 9 24 f = 1kHz RL = 4 Ω/8 Ω 20 16 12 8 RL = 4 Ω 8 4 0 8 12 16 20 24 28 32 Supply voltage VCC (V) 36 40 2004-08-25 TA8216HQ Package Dimensions Weight: 4.04 g (typ.) 10 2004-08-25 TA8216HQ About solderability, following conditions were confirmed • Solderability (1) Use of Sn-63Pb solder Bath · solder bath temperature = 230°C · dipping time = 5 seconds · the number of times = once · use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath · solder bath temperature = 245°C · dipping time = 5 seconds · the number of times = once · use of R-type flux RESTRICTIONS ON PRODUCT USE 030619EBF • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • This product generates heat during normal operation. However, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. The product is often the final stage (the external output stage) of a circuit. Substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 11 2004-08-25