GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 µs (typ.) • Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) • Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 50 1 ms ICP 100 Collector power dissipation (Tc = 25°C) PC 240 W TOSHIBA Junction temperature Tj 150 °C Weight: 9.75 g Tstg −55 to 150 °C Symbol Max Unit Rth (j-c) 0.521 °C/W Collector current Storage temperature range A JEDEC ― JEITA ― 2-21F2C Thermal Characteristics Characteristics Thermal resistance 1 2002-03-18 GT50J121 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) IC = 5 mA, VCE = 5 V 3.5 6.5 V VCE (sat) IC = 50 A, VGE = 15 V 2.0 2.45 V VCE = 10 V, VGE = 0, f = 1 MHz 7900 pF td (on) 0.09 tr 0.07 Inductive load 0.24 VCC = 300 V, IC = 50 A 0.30 0.05 0.43 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Turn-on delay time Rise time Switching time Turn-on time ton Turn-off delay time td (off) Fall time Switching loss tf VGG = +15 V, RG = 13 Ω (Note 1) Turn-off time toff Turn-on switching loss Eon 1.30 Turn-off switching loss Eoff 1.34 (Note 2) µs mJ Note 1: Switching time measurement circuit and input/output waveforms VGE GT50J325 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% 10% 10% td (on) td (off) tf toff tr ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 5% VCE Eoff Eon 2 2002-03-18 GT50J121 IC – VCE VCE – VGE 20 20 80 15 10 60 40 8 20 VGE = 7 V 0 0 1 2 3 16 12 8 100 30 0 0 5 (V) 4 8 (V) Common emitter Tc = 125°C (V) (V) Collector-emitter voltage VCE Collector-emitter voltage VCE 12 8 100 30 50 4 IC = 10 A 4 8 12 16 VGE 16 12 100 8 30 IC = 10 A 0 0 20 (V) 4 8 16 VGE 20 (V) VCE (sat) – Tc 5 Collector-emitter saturation voltage VCE (sat) (V) 80 60 40 Tc = 125°C 12 Gate-emitter voltage Common emitter VCE = 5 V 20 50 4 IC – VGE 100 (A) VGE 20 VCE – VGE 16 Gate-emitter voltage IC 16 20 Common emitter Tc = 25°C 0 0 Collector current 12 Gate-emitter voltage VCE – VGE 20 50 4 IC = 10 A 4 Collector-emitter voltage VCE Common emitter Tc = −40°C (V) Common emitter Tc = 25°C Collector-emitter voltage VCE Collector current IC (A) 100 −40 Common emitter VGE = 15 V 4 100 70 3 50 30 2 IC = 10 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 −60 20 (V) −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-03-18 GT50J121 Switching time ton, tr, td (on) – RG Switching time ton, tr, td (on) – IC 10 ton, tr, td (on) (µs) Common emitter VCC = 300 V VGG = 15 V 3 IC = 50 A : Tc = 25°C : Tc = 125°C (Note 1) 1 ton 0.3 Switching time Switching time ton, tr, td (on) (µs) 10 0.1 td (on) tr 0.03 0.01 1 3 10 30 100 Gate resistance RG 300 3 1 Common emitter VCC = 300 V VGG = 15 V RG = 13 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3 ton 0.1 td (on) tr 0.03 0.01 0 1000 10 (Ω) Switching time toff, tf, td (off) – RG (µs) toff, tf, td (off) Switching time (µs) toff, tf, td (off) Switching time toff 0.1 tf 3 10 30 100 Gate resistance RG Switching loss 300 tf 0.03 (mJ) Eon, Eoff 30 10 100 Gate resistance RG 20 Switching loss Switching loss (mJ) Eon, Eoff Switching loss 0.1 10 Eoff 10 td (off) Eon, Eoff – RG Eon 3 0.3 30 Collector current 0.3 0.1 1 toff (Ω) Common emitter VCC = 300 V VGG = 15 V IC = 50 A 10 : Tc = 25°C : Tc = 125°C (Note 2) 1 (A) Common emitter VCC = 300 V VGG = 15 V 3 RG = 13 Ω : Tc = 25°C : Tc = 125°C (Note 1) 1 0.01 0 1000 30 3 50 Switching time toff, tf, td (off) – IC td (off) 0.01 1 IC 40 10 Common emitter VCC = 300 V VGG = 15 V 3 IC = 50 A : Tc = 25°C : Tc = 125°C (Note 1) 1 0.03 30 Collector current 10 0.3 20 300 3 (Ω) (A) Eon, Eoff – IC Common emitter VCC = 300 V VGG = 15 V RG = 13 Ω : Tc = 25°C : Tc = 125°C (Note 2) 1 Eoff 0.3 10 20 Collector current 4 50 Eon 0.1 0 1000 IC 40 30 IC 40 50 (A) 2002-03-18 GT50J121 VCE, VGE – QG 500 (V) 300 Coes 100 30 10 0.1 Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.3 1 3 10 30 100 Collector-emitter voltage VCE 300 16 VGE 400 300 12 300 200 8 200 VCE = 100 V 100 0 0 1000 100 (V) IC max (pulse)* (A) (A) IC Collector current Collector current 1 ms* 3 *: Single pulse 10 ms* Tc = 25°C 1 Curves must be derated linearly with increase in temperature. 0.3 3 10 30 100 300 Collector-emitter voltage VCE rth (t) (°C/W) IC DC operation 0.1 1 Transient thermal resistance 30 100 µs* 10 10 10 10 10 (nC) 100 50 µs* IC max (continuous) 30 10 QG 300 100 10 0 400 300 Reverse bias SOA 300 10 200 Gate charge Safe operating area 4 Gate-emitter voltage (pF) C 1000 Capacitance 3000 Collector-emitter voltage VCE Cies 10000 20 Common emitter RL = 6 Ω Tc = 25°C (V) C – VCE 30000 10 3 1 0.3 0.1 1 1000 (V) Tj < = 125°C VGE = 15 V RG = 13 Ω 3 10 30 100 Collector-emitter voltage VCE 300 1000 (V) rth (t) – tw 2 Tc = 25°C 1 0 −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 5 2002-03-18 GT50J121 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-03-18