MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings (Ta = 25°C) Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A Junction temperature Tj 150 °C Tstg -40~125 °C Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 30 A 1 ms ICP 60 A Collector power dissipation (Tc = 25°C) PC 37 W Junction temperature Tj 150 °C Tstg -40~125 °C Symbol Condition Rating Unit VISO AC 1 minute 2500 V Storage temperature range IGBT Characteristics Collector current Storage temperature range All system Characteristics Isolation voltage 000707EAA1 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2000-12-22 1/7 MP7001 2. Electrical Characteristics (Ta = 25°C) Diode Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage (1) VFM (1) IF = 12.5 A ¾ 1.0 1.2 V Peak forward voltage (2) VFM (2) IF = 30 A ¾ 1.20 1.55 V VRRM = 600 V 10 mA IF = 30 A 100 A Repetitive peak reverse Current IRRM Peak reverse current (D1, D2) Irr Thermal resistance Rth (j-c) ¾ ¾ ¾ 3.5 °C/W Symbol Test Condition Min Typ. Max Unit ¾ ¾ ±500 nA IGBT Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage ICES VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA VGE (OFF) IC = 30 mA, VCE = 5 V 3.0 ¾ 6.0 V VCE (sat) IC = 30 A, VGE = 15 V ¾ 2.0 2.7 V ¾ 2100 ¾ pF Load resistance ¾ 0.36 ¾ VCC = 300 V, IC = 30 A ¾ 0.59 ¾ VGE = ±15 V, (RG = 56 W) ¾ 0.27 0.42 ¾ 0.51 ¾ ¾ ¾ 3.3 Input capacitance Turn-on time ton Fall time tf Turn-off Time (Note) toff Thermal Resistance Rth (j-c) ms °C/W Mechanical Rating Characteristics Fastening torque Min Typ. Max Unit ¾ ¾ 1.5 Nm Switching time test circuit & timing chart Load Resistance Test Circuit 50 ms -15 V 90% 10% 0 VGE VCC = 300 V RG = 56 W Waveform 10 W C = 680 mF 15 V 0 f = 1 MHz tr Switching time Note: VCE = 10 V, VGE = 0, Cies Rise time 3. VGE = ±20 V, VCE = 0 IGES 90% 90% IC 10% tr 0 ton 10% tf toff 2000-12-22 2/7 MP7001 4. Package Dimension 5. Image of Chips Mounting 2000-12-22 3/7 MP7001 6. PSC Equivalent Circuit Diagram (including application circuit) + PSC 1 ~ D5 D7 D1 D8 D2 6 C 4 2 ~ D6 IGBT1 3 A E 5 7 G 8 Fuse From CPU 7. Pin Assignment 1. 2. 3. 4. 5. 6. 7. 8. + pin ~ pin - pin ~ pin A pin C pin (TOSHIBA test pin) E pin G pin 2000-12-22 4/7 MP7001 IC – VCE IF – VF 100 50 18 Common cathode Common emitter (A) (A) 40 10 IC 7 30 Collector current Forward current IF 125 10 Ta = 25°C 1 0 0 20 VGE = 6 V 10 0 0.4 0.8 1.2 Forward voltage VF 1.6 2 0 (V) 1 2 VCE – VGE VCE 5 (V) VCE – VGE VCE Tc = -40°C 12 Collector-emitter voltage 60 8 30 10 A 4 4 8 12 Gate-emitter voltage VGE 16 Common emitter (V) (V) VCE 4 16 Common emitter 0 0 3 Collector-emitter voltage 16 Collector-emitter voltage Tc = 25°C 9 15 Tc = 25°C 12 60 8 30 10 A 4 0 0 20 4 8 12 16 Gate-emitter voltage VGE (V) 20 (V) IC – VGE VCE – VGE 16 60 Common emitter VCE = 0.2 V Tc = 125°C (A) 50 IC 12 Collector current Collector-emitter voltage VCE (V) Common emitter 60 8 30 10 A 4 40 30 Tc = 40°C 125 20 10 25 0 0 4 8 12 Gate-emitter voltage VGE 16 (V) 20 0 0 2 4 6 8 10 Gate-emitter voltage VGE 12 (V) 2000-12-22 5/7 MP7001 C – VCE VCE, VGE – QG Common emitter RL = 10 W Tc = 25°C 16 200 8 300 VCE = 100 V 100 4 0 0 40 80 120 Gate charge 1000 100 Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 10 0.1 Coes Cres 1 10 tr, ton – RG tr, toff – RG Common emitter VCC = 300 V VGE = ±15 V IC = 30 A : Tc = 25°C 30 tr, toff (ms) : Tc = 125°C 3 ton 1 tr 0.3 0.1 1 3 10 30 100 Gate resistance RG 300 10 : Tc = 25°C : Tc = 125°C 3 toff 1 tr 0.3 0.1 1 1000 Common emitter VCC = 300 V VGE = ±15 V IC = 30 A 3 10 (9) Common emitter VCC = 300 V VGE = ±15 V RG = 56 W tr, toff : Tc = 125°C (ms) : Tc = 25°C 1 ton 0.5 tr 0.3 0.1 1 3 5 10 Collector current 30 IC 100 300 1000 (9) tf, toff – IC 5 Switching time (ms) tr, ton Switching time 3 30 Gate resistance RG tr, ton – IC 5 (V) 50 Switching time (ms) tr, ton Switching time 10 VCE 1000 (nC) 50 30 100 Collector-emitter voltage 0 200 160 QG (pF) 12 Capacitance C 300 200 Cies (V) 400 Gate-emitter voltage VGE Collector-emitter voltage VCE (V) 10000 (A) 50 100 3 Common emitter VCC = 300 V VGE = ±15 V RG = 56 W : Tc = 25°C : Tc = 125°C 1 toff 0.5 tf 0.3 0.1 1 3 5 10 Collector current 30 IC 50 100 (A) 2000-12-22 6/7 MP7001 Rth (t) – tw (°C/W) 10 Rth (t) Thermal transient resistance Diode 3 1 IGBT IGBT 0.3 Diode 0.1 Tc = 25°C 0.03 0.001 0.01 0.1 Pulse width 1 tw 100 100 (s) Safe Operating Area Reverse Bias SOA 100 100 Tj < = 125°C DC *50 ms (A) 3 80 IC *10 ms 10 60 DC operation Tc = 25°C Collector current Collector current IC (A) 30 VGE = ±15 V RG = 56 W *500 ms *1 ms 1 20 * Single nonrepetitive pulsed Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 40 0 0 30 Collector-emitter voltage 100 VCE 300 1000 100 200 300 400 Collector-emitter voltage 500 VCE 600 700 (V) (V) 2000-12-22 7/7