GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications · The 4th Generation · Enhancement-Mode · High Speed: tf = 0.10 µs (typ.) · Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) · FRD included between Emitter and collector. Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 15 1 ms ICP 30 DC IF 1 ms A JEDEC ― 15 A JEITA ― IFM 30 W TOSHIBA Collector power dissipation (Tc = 25°C) PC 70 W Weight: 1.5 g Junction temperature Tj 150 °C Tstg -55~150 °C Collector current Emitter-collector forward current Storage temperature range 2-10S1C Equivalent Circuit Collector Gate Emitter JEDEC ― JEITA ― TOSHIBA 2-10S2C Weight: 1.4 g 1 2002-01-18 GT15J331 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA VGE (OFF) IC = 1.5 mA, VCE = 5 V 4.5 ¾ 7.5 V Gate-emitter cut-off voltage Collector-emitter saturation voltage ¾ 1.75 2.3 V ¾ 2400 ¾ pF Inductive Load ¾ 0.04 ¾ ton VCC = 300 V, IC = 15 A ¾ 0.22 ¾ tf VGG = 15 V, RG = 43 W ¾ 0.10 0.23 ¾ 0.37 ¾ Cies Rise time Switching time IC = 15 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz VCE (sat) Input capacitance tr Turn-on time Fall time Turn-off time (Note1) toff ms Peak forward voltage VF IF = 15 A, VGE = 0 ¾ ¾ 2.0 V Reverse recovery time trr IF = 15 A, di/dt = -100 A/ms ¾ ¾ 200 ns Thermal resistance (IGBT) Rth (j-c) ¾ ¾ ¾ 1.79 °C/W Thermal resistance (Diode) Rth (j-c) ¾ ¾ ¾ 3.45 °C/W Note1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 -VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% td (off) 10% td (on) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 5% VCE Eoff Eon 2 2002-01-18 GT15J331 IC – VCE VCE – VGE 50 20 Common emitter (V) Common emitter Tc = 25°C VCE 10 15 20 30 20 9 10 0 Collector-emitter voltage Collector current IC (A) 40 VGE = 8 V 0 1 2 3 Collector-emitter voltage 4 VCE Tc = -40°C 16 30 12 15 8 4 IC = 6 A 0 0 5 4 (V) 8 (V) (V) VCE 16 Collector-emitter voltage VCE Collector-emitter voltage Common emitter Tc = 25°C 30 12 15 8 IC = 6 A 4 8 12 Gate-emitter voltage VGE 16 Tc = 125°C 16 30 12 15 8 4 IC = 6 A 0 0 20 4 8 12 16 Gate-emitter voltage VGE (V) IC – VGE 20 (V) VCE (sat) – Tc 4 30 Common emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) Common emitter (A) IC (V) 20 Common emitter Collector current 20 VCE – VGE VCE – VGE 0 0 16 Gate-emitter voltage VGE 20 4 12 20 10 -40 Tc = 125°C VGE = 15 V 3 30 A 2 15 A IC = 6 A 1 25 0 0 4 8 12 Gate-emitter voltage VGE 16 0 -60 20 (V) -20 20 60 Case temperature Tc 3 100 140 (°C) 2002-01-18 GT15J331 Switching time ton, tr – RG 0.5 0.3 (ms) Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C ton, tr 1 Switching time ton, tr – IC 3 ton Switching time Switching time ton, tr (ms) 3 0.1 0.05 tr 0.03 Common emitter VCC = 300 V VGG = 15 V RG = 43 W : Tc = 25°C : Tc = 125°C 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.01 1 3 10 30 100 Gate resistance RG 300 0.01 1000 0 3 (9) 1 (ms) 1 toff, tf 0.5 toff tf 0.1 0.03 0.01 1 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C 3 10 30 100 Gate resistance RG Switching loss 300 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 43 W : Tc = 25°C : Tc = 125°C 0.05 0.03 0 Eoff 0.1 100 Gate resistance RG 9 300 1 (9) Eon Eoff 0 3 6 Collector current 4 (A) Eon, Eoff – IC 0.1 0.01 1000 15 12 IC Common emitter VCC = 300 V VGG = 15 V RG = 43 W : Tc = 25°C : Tc = 125°C Note2 (mJ) Eon, Eoff Eon 30 6 Switching loss Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C Note2 10 3 (9) 10 3 (A) tf Eon, Eoff – RG 0.3 0.03 1 0.3 Collector current Switching loss (mJ) Eon, Eoff Switching loss 1 IC toff 0.5 0.01 1000 10 3 15 12 Switching time toff, tf – IC 3 Switching time Switching time toff, tf (ms) Switching time toff, tf – RG 0.05 9 Collector current 3 0.3 6 9 12 IC 15 (A) 2002-01-18 GT15J331 VCE, VGE – QG C – VCE 500 Cies 100 Coes Cres Common emitter 10 30 100 300 Collector-emitter voltage VCE 1000 200 4 10 30 20 Reverse recovery current Irr (A) Forward current IF 20 15 Tc = 125°C 25 10 -40 5 1.2 Forward voltage 1.6 VF 10 100 Irr 1 2.0 30 1000 trr 0 3 (V) 6 9 Forward current Safe operating area 50 (nC) Common collector di/dt = -100 A/mS VGE = 0 : Tc = 25°C : Tc = 125°C (A) Common collector VGE = 0 0.8 QG 0 70 60 50 trr, Irr - IF 100 0.4 40 Gate charge IF - VF 0 0 8 100 (V) 30 25 200 VCE = 100 V 0 0 3000 12 300 (ns) 3 300 trr 3 1 VGE = 0 f = 1 MHz Tc = 25°C 16 10 15 12 IF Reverse recovery time 10 RL = 20 W 400 Tc = 25°C (V) (V) VCE 300 Collector-emitter voltage Capacitance C (pF) 1000 30 20 Common emitter Gate-emitter voltage VGE 3000 (A) Reverse bias SOA 50 IC max (pulse)* 30 50 ms* DC operation 1 ms* 1 *: Single 0.5 nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 (A) 3 100 ms* 10 IC 10 IC max (continuous) 5 5 Collector current Collector current IC (A) 10 ms* 3 1 0.5 0.3 30 Collector-emitter voltage 100 VCE 300 0.1 1 1000 Tj < = 125°C VGE = 15 V RG = 43 W 3 10 30 100 Collector-emitter voltage VCE (V) 5 300 1000 (V) 2002-01-18 GT15J331 Transient thermal impedance Rth (t) (°C/W) 10 10 Rth (t) – tw 2 Tc = 25°C 1 FRD 10 0 IGBT 10 10 10 10 -1 -2 -3 -4 10 -5 10 -4 10 -3 10 -2 Pulse width 10 -1 tw 10 0 10 1 10 2 (s) 6 2002-01-18 GT15J331 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-01-18