TOSHIBA TPC6107

TPC6107
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
TPC6107
Notebook PC Applications
Portable Equipment Applications
•
Unit: mm
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 9.6 S (typ.)
•
Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
•
Enhancement model: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 µA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−20
V
Gate-source voltage
VGSS
±12
V
ID
−4.5
Pulse (Note 1)
IDP
−18
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy (Note 3)
EAS
1.3
mJ
Avalanche current
IAR
−2.25
A
EAR
0.22
mJ
DC
Drain current
Repetitive avalanche energy
(Note 1)
(Note 4)
A
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Rth (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
6
5
4
1
2
3
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC6107
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = −20 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−20
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 12 V
−8
⎯
⎯
−0.5
⎯
−1.2
Drain-source breakdown voltage
Gate threshold voltage
Vth
VDS = −10 V, ID = −200 µA
RDS (ON)
VGS = −2 V, ID = −2.2 A
⎯
110
180
RDS (ON)
VGS = −2.5 V, ID = −2.2 A
⎯
70
100
RDS (ON)
VGS = −4.5 V, ID = −2.2 A
⎯
40
55
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.2 A
4.8
9.6
⎯
Input capacitance
Ciss
⎯
680
⎯
Reverse transfer capacitance
Crss
⎯
130
⎯
Output capacitance
Coss
⎯
140
⎯
⎯
6
⎯
⎯
16
⎯
⎯
38
⎯
⎯
85
⎯
⎯
9.8
⎯
⎯
2
⎯
⎯
3
⎯
Drain-source ON resistance
tr
Turn-ON time
ton
4.7 Ω
Switching time
Fall time
tf
Turn-OFF time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = −2.2 A
VOUT
VGS 0 V
−5 V
RL = 4.5 Ω
Rise time
VDS = −10 V, VGS = 0 V, f = 1 MHz
VDD ∼
− −10 V
<
Duty = 1%, tw = 10 µs
VDD ∼
− −16 V, VGS = −5 V,
ID = −4.5 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−18
A
⎯
⎯
1.2
V
VDSF
IDR = −4.5 A, VGS = 0 V
Marking (Note 5)
Lot code (month)
Part No.
(or abbreviation code)
Pin #1
Lot No.
S3G
Product-specific code
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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TPC6107
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(a)
(b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −2.25 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
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TPC6107
ID – VDS
−5 V
−2.5 V
−2.0 V
Drain current ID (A)
−3 V
−4
ID – VDS
−10
Common source
Ta = 25°C Pulse test
−1.9 V
−4 V
Drain current ID (A)
−5
−1.8 V
−3
−1.7 V
−2
−1.6 V
−1.5 V
−1
−2.3 V
−5 V
−8
Common source
Ta = 25°C Pulse test
−2.2 V
−4 V
−3 V
−2.0 V
−2.5 V
−6
−1.9 V
−1.8 V
−4
−1.7 V
−2
−1.6 V
VGS = −1.4 V
0
0
−0.4
−0.8
−1.2
Drain−source voltage
−1.6
VGS = −1.4 V
0
0
−2.0
−1
VDS (V)
−2
(V)
Common source
Ta = 25°C
Pulse test
VDS
−0.8
−6
−4
25°C
−2
0
0
Ta = −55°C
−0.5
−1.0
−1.5
Gate−source voltage VGS
−2.0
−0.6
−0.4
−0.2
0
0
−2.5
(V)
−2
30
25°C
10
100°C
3
1
0.3
−1
−8
−3
−10
(V)
RDS (ON) – ID
Common source
VDS = −10 V
Pulse test
−0.3
−6
1000
Ta = −55°C
0.1
−0.1
−4
Gate−source voltage VGS
Drain−source ON resistance
RDS (ON) (mΩ)
100
ID = −4.5 A
−2.2 A
−1.1 A
|Yfs| – ID
(S)
VDS (V)
VDS – VGS
100°C
Forward transfer admittance |Yfs|
−5
−1.0
Common source
VDS = −10 V
Pulse test
Drain−source voltage
Drain current ID (A)
−8
−4
Drain−source voltage
ID – VGS
−10
−3
−10
−30
300
−2.0 V
Drain current ID (A)
−2.5 V
100
VGS = −4.5 V
30
10
−0.1
−100
Common source
Ta = 25°C
Pulse test
−0.3
−1
−3
−10
−30
−100
Drain current ID (A)
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TPC6107
RDS (ON) – Ta
IDR – VDS
−100
200
Common source
Ta = 25°C
Pulse test
(A)
Pulse test
ID = −2.2 A
150
Drain reverse current IDR
Drain-source ON resistance
RDS (ON) (mΩ)
Common source
−1.1 A
VGS = −2.0 V
−4.5 A
100
−2.2 A, −1.1 A
−2.5 V
50
−4.5 A, −2.2 A, −1.1 A
−4.5 V
0
−80
−40
0
40
Ambient temperature
120
80
Ta
−30
−10
−4 V
−3
−2 V
−1
−1 V
−0.3
−0.1
0
160
VGS = −0 V
0.2
(°C)
0.4
0.6
Drain−source voltage
C – VDS
0.8
1.0
1.2
VDS (V)
Vth – Ta
−2.0
10000
Gate threshold voltage Vth (V)
Common source
Ciss
300
Coss
100
Common source
Crss
Ta = 25°C
30
f = 1 MHz
VGS = 0 V
10
−0.1
−0.3
−1
−3
Drain−source voltage
−30
−10
−1.2
−0.8
−0.4
0
−80
−100
VDS (V)
−40
0
Ambient temperature
2.0
VDS (V)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(1) t = 5 s
Drain−source voltage
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
1.5
(1) DC
1.0
(2) t = 5 s
0.5
(2) DC
0
0
40
80
Ambient temperature
120
Ta
−30
2.5
(W)
80
160
(°C)
Dynamic input/output
characteristics
PD – Ta
Drain power dissipation PD
40
120
Ta
−25
VDS
(°C)
−8 V
−15
−10
−10
−4 V
−6
VDD = −16 V
−4
−5
−2
VGS
5
10
Total gate charge Qg
5
−12
−8
−20
0
0
160
Common source
ID = −4.5 A
Ta = 25°C
Pulse test
15
(V)
1000
VDS = −10 V
ID = −200 µA
Pulse test
−1.6
Gate−source voltage VGS
Capacitance C
(pF)
3000
0
20
(nC)
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TPC6107
rth − tw
Transient thermal impedance
rth (°C/W)
1000
300
Device mounted on a glassepoxy board (b) (Note 2b)
100
30
Device mounted on a glassepoxy board (a) (Note 2a)
10
3
1
0.3
Single pulse
0.1
0.001
0.01
1
0.1
Pulse width
10
tw
100
1000
(s)
Safe operating area
−100
−30
Drain current ID
(A)
ID max (Pulse)*
1 ms*
−10
−3
10 ms*
−1
−0.3
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1
−0.3
−1
−3
Drain−source voltage
VDSSmax
−10
−30
−100
VDS (V)
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TPC6107
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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