TOSHIBA TPC8009-H

TPC8009-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8009-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
·
Small footprint due to small and thin package
·
High speed switching
·
Small gate charge: Qg = 29 nC (typ.)
·
Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.)
·
High forward transfer admittance: |Yfs| = 16 S (typ.)
·
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
·
Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kW)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC
(Note 1)
ID
13
Pulse
(Note 1)
IDP
52
PD
1.9
W
PD
1.0
W
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
A
mJ
IAR
13
A
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Repetitive avalanche energy
(Note 2a) (Note 4)
JEITA
―
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
219
Avalanche current
―
TOSHIBA
EAS
(Note 3)
JEDEC
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page.
8
7
6
5
1
2
3
4
This transistor is an electrostatic sensitive device. Please handle with
caution.
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2002-01-17
TPC8009-H
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-a)
65.8
°C/W
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8009
H
TYPE
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 ´ 25.4 ´ 0.8
(Unit: mm)
FR-4
25.4 ´ 25.4 ´ 0.8
(Unit: mm)
(b)
(a)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = 13 A
Note 4: Repetitive rating; pulse width limited by max channel temperature.
Note 5: · on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
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TPC8009-H
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
¾
¾
10
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
¾
¾
V (BR) DSX
ID = 10 mA, VGS = -20 V
15
¾
¾
VDS = 10 V, ID = 1 mA
1.1
¾
2.3
VGS = 4.5 V, ID = 6.5 A
¾
11
15
VGS = 10 V, ID = 6.5 A
¾
8
10
VDS = 10 V, ID = 6.5 A
8
16
¾
¾
1460
¾
¾
250
¾
¾
600
¾
¾
5
¾
¾
13
¾
Drain-source breakdown voltage
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
Turn-ON time
ton
4.7 W
Switching time
Fall time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
12
¾
VDD ~
- 15 V
<
Duty = 1%, tw = 10 ms
¾
37
¾
VDD ~
- 24 V, VGS = 10 V, ID = 13 A
¾
29
¾
VDD ~
- 24 V, VGS = 5 V, ID = 13 A
¾
16
¾
¾
4.2
¾
¾
7.3
¾
Gate switch charge
QSW
¾
9.1
¾
VDD ~
- 24 V, VGS = 10 V, ID = 13 A
V
mW
S
pF
ns
¾
tf
Turn-OFF time
ID = 6.5 A
VOUT
VGS 10 V
0V
RL = 2.3 W
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
V
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
¾
¾
¾
52
A
¾
¾
-1.2
V
VDSF
IDR = 13 A, VGS = 0 V
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2002-01-17
TPC8009-H
ID – VDS
10
10
4
ID – VDS
20
Common source
Ta = 25°C Pulse test
3
2.9
Common source
Ta = 25°C Pulse test
3.1
(A)
16
6
ID
(A)
2.7
4
Drain current
ID
Drain current
4
3
2.8
8
10
2.6
2.9
12
2.8
8
2.5
2.5
2.7
4
2
VGS = 2.5 V
VGS = 2.4 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
0
0
1.0
0.4
(V)
0.8
Drain-source voltage
ID – VGS
Common source
VDS = 10 V
Pulse test
(V)
0.7
Drain-source voltage
0.8
VDS
(A)
ID
Drain current
25
100
2
3
4
Gate-source voltage
5
0.6
0.5
0.4
ID = 13 A
0.3
0.2
VGS
0
0
6
(V)
3.5
6.5
2
4
6
8
10
Gate-source voltage
|Yfs| – ID
12
VGS
100
(S)
14
16
(V)
RDS (ON) – ID
100
Common source
Ta = 25°C
Pulse test
Drain-source on resistance
RDS (ON) (m9)
Ta = -55°C
25
10
(V)
0.1
Ta = -55°C
1
2.0
Common source
Ta = 25°C
Pulse test
0.9
20
10
Forward transfer admittance |Yfs|
VDS
1
30
0
0
1.6
VDS – VGS
50
40
1.2
100
1
VGS = 4.5 V
10
10
Common source
VDS = 10 V
Pulse test
0
0.1
1
Drain current
10
ID
1
0.1
100
(A)
1
Drain current
4
10
ID
100
(A)
2002-01-17
TPC8009-H
RDS (ON) – Ta
IDR – VDS
18
100
ID = 13、6.5、3.5 A
5
(A)
10
14
Drain reverse current IDR
12
VGS = 4.5 V
10
ID = 13、6.5、3.5 A
8
10
6
4
Common source
2
3
10
VGS = 0 V
1
1
Common source
Ta = 25°C
Pulse test
Pulse test
0
-80
-40
0
40
80
120
0.1
0
160
-0.2
-0.4
Drain-source voltage
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
1000
Coss
Crss
100
10
Drain-source voltage
VDS
1.5
1
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
-80
-40
100
(V)
0
40
80
120
160
Ambient temperature Ta (°C)
PD – Ta
Dynamic Input/Output Characteristics
2
30
(V)
1.6
VDS
Drain-source voltage
PD
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
1.2
t = 10 s
(2)
0.8
0.4
50
100
150
12
Common source
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(1)
25
Ambient temperature Ta (°C)
ID = 13 A Pulse test
VDS
10
12
20
8
6
VDD = 24 V
15
6
12
VGS
10
4
6
2
5
0
0
200
VDD = 24 V
Ta = 25°C
5
10
15
20
25
(V)
1
2
VGS
(pF)
Capacitance C
Ciss
10
0.1
(W)
(V)
2.5
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Drain power dissipation
VDS
-1
Vth – Ta
Capacitance – VDS
10000
0
0
-0.8
-0.6
Gate-source voltage
Drain-source on resistance
RDS (ON) (m9)
16
0
30
Total gate charge Qg (nC)
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2002-01-17
TPC8009-H
rth - tw
(°C/W)
1000
100
(1) Device mounted on a glass-epoxy board
(a) (Note 2a)
(2) Device mounted on a glass-epoxy board
(b) (Note 2b)
t = 10 s
(2)
Transient thermal impedance
rth
(1)
10
1
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe Operating Area
100
ID max (pulse)*
1 ms*
10
Drain current
ID
(A)
10 ms*
1
0.1
*: Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01
0.1
VDSS max
1
Drain-source voltage
10
VDS
100
(V)
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2002-01-17
TPC8009-H
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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