TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications · Small footprint due to small and thin package · High speed switching · Small gate charge: Qg = 29 nC (typ.) · Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) · High forward transfer admittance: |Yfs| = 16 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) · Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kW) VDGR 30 V Gate-source voltage VGSS ±20 V Drain current DC (Note 1) ID 13 Pulse (Note 1) IDP 52 PD 1.9 W PD 1.0 W Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy A mJ IAR 13 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Repetitive avalanche energy (Note 2a) (Note 4) JEITA ― 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 219 Avalanche current ― TOSHIBA EAS (Note 3) JEDEC Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page. 8 7 6 5 1 2 3 4 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-17 TPC8009-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8009 H TYPE ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = 13 A Note 4: Repetitive rating; pulse width limited by max channel temperature. Note 5: · on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-01-17 TPC8009-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ¾ ¾ 10 mA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ¾ ¾ V (BR) DSX ID = 10 mA, VGS = -20 V 15 ¾ ¾ VDS = 10 V, ID = 1 mA 1.1 ¾ 2.3 VGS = 4.5 V, ID = 6.5 A ¾ 11 15 VGS = 10 V, ID = 6.5 A ¾ 8 10 VDS = 10 V, ID = 6.5 A 8 16 ¾ ¾ 1460 ¾ ¾ 250 ¾ ¾ 600 ¾ ¾ 5 ¾ ¾ 13 ¾ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton 4.7 W Switching time Fall time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd 12 ¾ VDD ~ - 15 V < Duty = 1%, tw = 10 ms ¾ 37 ¾ VDD ~ - 24 V, VGS = 10 V, ID = 13 A ¾ 29 ¾ VDD ~ - 24 V, VGS = 5 V, ID = 13 A ¾ 16 ¾ ¾ 4.2 ¾ ¾ 7.3 ¾ Gate switch charge QSW ¾ 9.1 ¾ VDD ~ - 24 V, VGS = 10 V, ID = 13 A V mW S pF ns ¾ tf Turn-OFF time ID = 6.5 A VOUT VGS 10 V 0V RL = 2.3 W Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ¾ ¾ ¾ 52 A ¾ ¾ -1.2 V VDSF IDR = 13 A, VGS = 0 V 3 2002-01-17 TPC8009-H ID – VDS 10 10 4 ID – VDS 20 Common source Ta = 25°C Pulse test 3 2.9 Common source Ta = 25°C Pulse test 3.1 (A) 16 6 ID (A) 2.7 4 Drain current ID Drain current 4 3 2.8 8 10 2.6 2.9 12 2.8 8 2.5 2.5 2.7 4 2 VGS = 2.5 V VGS = 2.4 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 0 1.0 0.4 (V) 0.8 Drain-source voltage ID – VGS Common source VDS = 10 V Pulse test (V) 0.7 Drain-source voltage 0.8 VDS (A) ID Drain current 25 100 2 3 4 Gate-source voltage 5 0.6 0.5 0.4 ID = 13 A 0.3 0.2 VGS 0 0 6 (V) 3.5 6.5 2 4 6 8 10 Gate-source voltage |Yfs| – ID 12 VGS 100 (S) 14 16 (V) RDS (ON) – ID 100 Common source Ta = 25°C Pulse test Drain-source on resistance RDS (ON) (m9) Ta = -55°C 25 10 (V) 0.1 Ta = -55°C 1 2.0 Common source Ta = 25°C Pulse test 0.9 20 10 Forward transfer admittance |Yfs| VDS 1 30 0 0 1.6 VDS – VGS 50 40 1.2 100 1 VGS = 4.5 V 10 10 Common source VDS = 10 V Pulse test 0 0.1 1 Drain current 10 ID 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2002-01-17 TPC8009-H RDS (ON) – Ta IDR – VDS 18 100 ID = 13、6.5、3.5 A 5 (A) 10 14 Drain reverse current IDR 12 VGS = 4.5 V 10 ID = 13、6.5、3.5 A 8 10 6 4 Common source 2 3 10 VGS = 0 V 1 1 Common source Ta = 25°C Pulse test Pulse test 0 -80 -40 0 40 80 120 0.1 0 160 -0.2 -0.4 Drain-source voltage Ambient temperature Ta (°C) Gate threshold voltage Vth (V) 1000 Coss Crss 100 10 Drain-source voltage VDS 1.5 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 100 (V) 0 40 80 120 160 Ambient temperature Ta (°C) PD – Ta Dynamic Input/Output Characteristics 2 30 (V) 1.6 VDS Drain-source voltage PD (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.2 t = 10 s (2) 0.8 0.4 50 100 150 12 Common source (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) 25 Ambient temperature Ta (°C) ID = 13 A Pulse test VDS 10 12 20 8 6 VDD = 24 V 15 6 12 VGS 10 4 6 2 5 0 0 200 VDD = 24 V Ta = 25°C 5 10 15 20 25 (V) 1 2 VGS (pF) Capacitance C Ciss 10 0.1 (W) (V) 2.5 Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain power dissipation VDS -1 Vth – Ta Capacitance – VDS 10000 0 0 -0.8 -0.6 Gate-source voltage Drain-source on resistance RDS (ON) (m9) 16 0 30 Total gate charge Qg (nC) 5 2002-01-17 TPC8009-H rth - tw (°C/W) 1000 100 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (2) Transient thermal impedance rth (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 100 ID max (pulse)* 1 ms* 10 Drain current ID (A) 10 ms* 1 0.1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 VDSS max 1 Drain-source voltage 10 VDS 100 (V) 6 2002-01-17 TPC8009-H RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-01-17