TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII) TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • • High-speed switching Small gate charge: Qg = 23 nC (typ.) • Low drain-source ON resistance: R DS (ON) = 6.8 mO (typ.) • • High forward transfer admittance: |Yfs| =32 S (typ.) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) • Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 30 V Drain-gate voltage (RGS = 20 kΩ) V DGR 30 V Gate-source voltage V GSS ±20 V ID 13 IDP 52 PD 1.9 W PD 1.0 W EA S 110 mJ IAR 13 A EAR 0.084 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current (Note 1) Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A JEDEC ? JEITA ? TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8020-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8020 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, R G = 25 Ω, IAR = 13 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPC8020-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, V DS = 0 V ±10 µA Drain cut-OFF current IDSS V DS = 30 V, V GS = 0 V 10 µA V (BR) DSS ID = 10 mA, V GS = 0 V 30 V (BR) DSX ID = 10 mA, V GS = −20 V 15 V DS = 10 V, ID = 1 mA 1.1 2.3 V GS = 4.5 V , ID = 6.5 A 9.5 13 V GS = 10 V , ID = 6.5 A 6.8 9 V DS = 10 V , ID = 6.5 A 16 32 1395 140 525 3 9 Drain-source breakdown voltage Gate threshold voltage V th Drain-source ON resistance RDS (ON) Forward transfer admittance |Yf s | Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton tf Turn-OFF time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd Gate switch charge QSW 4.7 Ω Switching time Fall time ID = 6.5 A V OUT 10 V V GS 0V RL = 2.3Ω Rise time V DS = 10 V , V GS = 0 V , f = 1 MHz V mΩ S pF ns 8 V DD ∼ − 15 V < Duty = 1%, tw = 10 µs 29 V DD ∼ − 24 V, V GS = 10 V , ID = 13 A 23 V DD ∼ − 24 V, V GS = 5 V , ID = 13 A 13 4.5 4.9 6.9 V DD ∼ − 24 V, V GS = 10 V , ID = 13 A V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 52 A −1.2 V V DSF IDR = 13 A, V GS = 0 V 3 2004-07-06 TPC8020-H ID – V DS 10 3.5 3.2 3.1 ID – V DS COMMON SOURCE Ta = 25°C 3 8 6 2.9 4 2.8 2 VGS = 2.6V 0.2 3.5 3.3 6 0 0 10 PULSE TEST 4 5 8 20 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 10 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE VDS 4 4.5 16 3.2 5 3.1 6 12 8 3 8 2.9 4 0 0 1 (V) VGS = 2.7V 0.4 0.8 ID – V GS DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) VDS = 10 V PULSE TEST 12 8 Ta = −55°C 4 25 0 0 1 2 3 4 5 GATE-SOURCE VOLTAGE VGS 6 (V) COMMON SOURCE Ta = 25℃ 0.16 PULSE TEST 0.12 ID = 13 A 0.08 6.5 0.04 3.3 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS Yf s – ID 10 (V) RDS (ON) – ID 100 Ta = −55°C 25 10 100 1 COMMON SOURCE VDS = 10 V PULSE TEST 1 10 DRAIN-SOURCE ON RESISTANCE RDS (ON) (mΩ) FORWARD TRANSFER ADMITTANCE Yfs (S) 2 0.2 (V) 100 0.1 0.1 1.6 V DS – V GS COMMON SOURCE 100 1.2 DRAIN-SOURCE VOLTAGE VDS 20 16 COMMON SOURCE Ta = 25°C PULSE TEST COMMON SOURCE Ta = 25°C PULSE TEST 4.5 10 VGS = 10 V 1 0.1 100 DRAIN CURRENT DI (A) 1 10 100 DRAIN CURRENT DI (A) 4 2004-07-06 TPC8020-H RDS (ON) – Ta IDR – V DS 100 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) PULSE TEST 16 ID = 13A 3.5A,6.5A 12 VGS = 4.5 V 8 ID = 3.5A,6.5A,13A 4 VGS = 10 V 10 3 10 4.5 1 COMMON SOURCE Ta = 25°C VGS = 0 V PULSE TEST 0 −80 −40 0 40 80 120 1 0 160 −0.2 AMBIENT TEMPERATURE Ta (°C) −0.4 CAPACITANCE – V DS V th – Ta GATE THRESHOLD VOLTAGE Vth (V) Coss COMMON ソース接地SOURCE V =0V VGS GS = 0 V Crss ff = =1 1 MHz MHz Ta Ta = = 25°C 25°C 1 10 2 1.5 1 COMMON SOURCE VDS = 10 V 0.5 ID = 1 mA PULSE TEST 0 −80 100 −40 0 40 80 120 DRAIN-SOURCE VOLTAGE VDS (V) AMBIENT TEMPERATURE Ta (°C) PD – Ta DYNAMIC INPUT / OUTPUT CHARACTERISTICS 2 50 (1)Device mounted on a glass-epoxy board(a) (Note 2a) (1) (2)Device mounted on a 1.6 glass-epoxy board(b) (Note 2b) ｔ＝10s 1.2 (2) 0.8 0.4 20 ID = 13 A 40 Ta = 25°C 16 VDD = 6 V PULSE TEST 30 12 VDS 12 V 24 V 20 8 10 4 VGS 0 40 80 120 160 COMMON SOURCE DRAIN POWER DISSIPATION PD (W) CAPACITANCE C (pF) 1000 10 0.1 DRAIN POWER DISSIPATION PD (W) −1.0 2.5 Ciss 0 0 −0.8 DRAIN-SOURCE VOLTAGE VDS (V) 10000 100 −0.6 0 160 AMBIENT TEMPERATURE Ta (°C) 8 16 24 32 0 40 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω) 20 TOTAL GATE CHARGE Qg (nC) 5 2004-07-06 TPC8020-H TRANSIENT THERMAL IMPEDANCE r th (℃/W) r th – tw 1000 (1) Device mounted on a glass-epoxy board (a) (2) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (1) 10 1 SINGLE PULSE 0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH tw (s) SAFE OPERATING AREA DRAIN CURRENT ID (A) 100 ID max ( PULSED) * t=1ms 10 t=10ms ※SINGLE NONREPETITIVE PULSE 1 Tc=25℃ CURVES LINEARLY MUST WITH BE DERATED INCREASE IN TEMPERATURE. VDSS max 0.1 0.1 1 10 100 DRAIN-SOURCE VOLTAGE VDS (V) 6 2004-07-06 TPC8020-H RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06