TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 0.15±0.05 4 1 5.0±0.2 0.05 S S 4 4.25±0.2 8 Characteristics Symbol Rating Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V (Note 1) ID − 40 Pulsed (Note 1) IDP −120 PD 45 W PD 2.8 W PD 1.6 W EAS 208 mJ IAR − 40 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN Unit A 5 0.8±0.1 JEDEC ⎯ JEITA ⎯ TOSHIBA A 3.5±0.2 0.6±0.1 1 Absolute Maximum Ratings (Ta = 25°C) 0.595 0.166±0.05 6.0±0.3 • • 5.0±0.2 Small footprint due to small and thin package 0.95±0.05 • 1.27 8 1.1±0.2 Portable Equipment Applications 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCA8102 Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8102 Type * Lot No. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V,Tch = 25°C (initial),L = 100μH,RG = 25 Ω,IAR = − 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ”c” on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (Last digit of the calendar year) 2 2006-11-16 TPCA8102 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Vth VDS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 VGS = −4 V, ID = −20 A ⎯ 9.0 14 VGS = −10 V, ID = −20 A ⎯ 4.5 6.0 VDS = −10 V, ID = −20 A 30 60 ⎯ ⎯ 4600 ⎯ ⎯ 850 ⎯ ⎯ 980 ⎯ ⎯ 10 ⎯ ⎯ 20 ⎯ ⎯ 78 ⎯ ⎯ 220 ⎯ ⎯ 109 ⎯ ⎯ 24 ⎯ ⎯ 25 ⎯ Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-ON time ton VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = −20A VOUT RL = 0.75 Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage VDD ∼ − −15 V < Duty = 1%, tw = 10 µs VDD ∼ − −24 V, VGS = 10 V, ID = −40 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −120 A ⎯ ⎯ 1.2 V VDSF IDR = −40 A, VGS = 0 V 3 2006-11-16 TPCA8102 ID – VDS −3.6 (A) −4.5 −30 −2.8 −20 −2.6 −10 VGS = −2.4V 0 0 −0.2 −0.4 −0.6 Drain-source voltage −1 −80 −3 −6 (A) ID Common source Ta = 25°C Pulse test −3.8 −8 −40 Drain current −4 −60 −40 −3.6 −5 −3.4 −3.2 −3 −2.8 −2.6 −20 VGS = −2.4 V 0 0 −1 −0.8 −0.8 −0.4 VDS (V) −2 VDS (V) VDS – VGS Common source Ta = 25°C Pulse test 100 (V) Ta = −55°C 25 −0.8 -40 Drain-source voltage Drain current VDS (A) ID -60 -20 0 0 −2 −1 −3 Gate-source voltage VGS −0.4 −10 −0.2 0 −4 0 (V) ID = −40 A −20 −4 −8 25 10 1 10 Drain current Drain-source ON resistance RDS (ON) (mΩ) (S) Ta = −55°C ID (A) (V) Common source Ta = 25°C Pulse test 10 −10 1 10 Drain current 4 VGS −20 VGS = −4 V 1 100 −16 RDS (ON) – ID 100 Common source VDS = −10 V Pulse test 100 −12 Gate-source voltage 100 1 −0.6 |Yfs| – ID 1000 Forward transfer admittance ⎪Yfs⎪ −1.6 −1.0 Common source VDS = −10 V Pulse test -80 −1.2 Drain-source voltage ID – VGS -100 Common source Ta = 25°C Pulse test −4 −3.8 −8 −6 −4.5 ID −10 ID – VDS −100 Drain current −50 100 1000 ID (A) 2006-11-16 TPCA8102 RDS (ON) – Ta IDR – VDS 20 100 Common source −10 V 12 VGS = −10 V 8 ID = −10/ −20 / −40A 4 −40 0 40 80 Ambient temperature 120 Ta −3 −5 IDR (A) ID = −40 A Drain reverse current Drain-source ON resistance RDS (ON) (mΩ) −20 16 0 −80 −10 VGS = −4 V Pulse test −1 Common source Ta = 25°C Pulse test 1 160 VGS = 0 V 10 0 (°C) 0.2 0.6 0.4 Drain-source voltage Capacitance – VDS 1 0.8 VDS (V) Vth – Ta −2.5 10000 Common source Capacitance Vth (V) Gate threshold voltage Coss 1000 C (pF) Ciss Crss 100 Common source VGS = 0 V f = 1 MHz VDS = −10 V ID = −1 mA −2.0 Pulse test −1.5 −1.0 −0.5 Ta = 25°C 10 −0.1 −1 −10 Drain-source voltage 0 −80 −100 VDS (V) −40 0 40 Ambient temperature 80 Ta 120 160 (°C) Dynamic input/output characteristics −30 −30 Ta = 25°C Pulse test −20 −20 −12 −6 VGS −10 −10 VDD = −24 V 0 0 40 80 120 160 200 VGS (V) ID = −40 A Gate-source voltage VDS (V) VDS Drain-source voltage Common source 0 Total gate charge Qg (nC) 5 2006-11-16 TPCA8102 rth – tw TRANSIENT THERMAL IMPEDANCE rth (℃/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (1) (3) Tc=25℃ 10 (3) 1 SINGLE PULSE 0.1 0.001 0.01 0.1 1 10 PULSE WIDTH tw 100 (s) PD – Ta 3 PD – Tc 50 (1)Device mounted on a glass-epoxy board(a) (1) (Note 2a) DRAIN POWER DISSIPATION PD (W) DRAIN POWER DISSIPATION PD (W) 2.5 (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s 2 1.5 (2) 1 0.5 0 0 50 1000 100 150 AMBIENT TEMPERATURE Ta 40 30 20 10 0 200 (°C) 0 50 100 CASE TEMPERATURE 150 Tc 200 (°C) SAFE OPERATING AREA DRAIN CURRENT ID (A) −1000 ID max (continuous) −100 ID max (pulsed) * −10 10ms 1ms DC OPEATION TC = 25°C * SINGLE NONREPETITIVE −1 PULSE Tc=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. −0.1 −0.1 −1 VDSS max −10 DRAIN-SOURCE VOLTAGE −100 VDS (V) 6 2006-11-16 TPCA8102 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-16