TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • High speed switching • Small gate charge: Qg = 18 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V Drain current DC (Note 1) ID 11 Pulse (Note 1) IDP 44 PD 1.9 W PD 1.0 W Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy A mJ IAR 11 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Repetitive avalanche energy (Note 2a) (Note 4) JEITA ― 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 157 Avalanche current ― TOSHIBA EAS (Note 3) JEDEC Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. 8 7 6 5 1 2 3 4 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-03-12 TPC8010-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8010 H TYPE ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-03-12 TPC8010-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 V (BR) DSX ID = 10 mA, VGS = −20 V 15 VDS = 10 V, ID = 1 mA 1.1 2.3 VGS = 4.5 V, ID = 5.5 A 16 25 VGS = 10 V, ID = 5.5 A 12 16 VDS = 10 V, ID = 5.5 A 5.5 11 1020 120 400 3.1 11 Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton 4.7 Ω Switching time Fall time Total gate charge (gate-source plus gate-drain) toff 3.4 Duty < = 1%, tw = 10 µs 23 Qg VDD ∼ − 24 V, VGS = 10 V, ID = 11 A 18 VDD ∼ − 24 V, VGS = 5 V, ID = 11 A 10 Gate-source charge 1 Qgs1 2.6 Gate-drain (“miller”) charge Qgd 4.4 Gate switch charge QSW 5.5 VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 10 V, ID = 11 A V mΩ S pF ns tf Turn-OFF time ID = 5.5 A VOUT 10 V VGS 0V RL = 2.7 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 44 A −1.2 V VDSF IDR = 11 A, VGS = 0 V 3 2002-03-12 TPC8010-H ID – VDS 10 3 2.7 5 8 2.6 2.8 4 (A) 4 10 Common source Ta = 25°C Pulse test 3 5 16 ID 2.5 2.4 6 Drain current ID Drain current ID – VDS 20 Common source Ta = 25°C Pulse test 2.8 (A) 10 2.3 4 2.2 2.7 12 2.6 2.5 8 2.4 2.3 4 2 VGS = 2.1 V VGS = 2 V 0 0 2 4 6 8 Drain-source voltage VDS 0 0 10 4 (V) 8 12 16 Drain-source voltage VDS ID – VGS 1 Common source Ta = 25°C Pulse test Common source (V) Drain-source voltage VDS 30 Drain current ID (A) VDS = 10 V Pulse test 20 25 100 0 0 1 Ta = −55°C 2 3 Gate-source voltage 0.8 0.6 0.4 5.5 0 0 5 (V) 2 4 Drain-source on resistance RDS (ON) (mΩ) |Yfs| (S) Forward transfer admittance (V) Ta = 25°C 100 1 10 ID VGS 12 Common source 25 Drain current 10 RDS (ON) – ID 10 1 8 100 Common source VDS = 10 V Pulse test 30 0.3 0.1 6 Gate-source voltage |Yfs| – ID 3 ID = 11 A 0.2 2.5 4 VGS 100 Ta = −55°C (V) VDS – VGS 40 10 20 30 VGS = 4.5 V (A) 4 10 10 3 1 0.1 100 Pulse test 0.3 1 3 Drain current ID 10 30 (A) 2002-03-12 TPC8010-H RDS (ON) – Ta IDR – VDS 100 15 (A) IDR 20 VGS = 4.5 V ID = 11, 5.5, 2.5 A 10 5 10 ID = 11, 5.5, 2.5 A Drain reverse current Drain-source on resistance RDS (ON) (mΩ) 25 10 5 Common source 3 VGS = 0 V 10 1 1 Common source Ta = 25°C Pulse test Pulse test 0 −80 −40 0 40 80 120 0.1 0 160 −0.2 −0.4 −0.6 −0.8 Drain-source voltage VDS Ambient temperature Ta (°C) −1 −1.2 (V) Vth – Ta Capacitance – VDS 5000 2.5 Gate threshold voltage Vth (V) Ciss 1000 500 300 Coss 100 Crss VGS = 0 V f = 1 MHz 10 0.1 1 3 5 10 Drain-source voltage VDS 30 50 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 −80 −40 Ta = 25°C 0.3 0.5 1 100 (V) 1.2 (V) Drain-source voltage VDS (W) Drain power dissipation PD 1.6 (2) 0.8 0.4 0 0 50 100 80 120 160 Dynamic Input/Output Characteristics 40 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) 40 Ambient temperature Ta (°C) PD – Ta 2 0 150 30 Ambient temperature Ta (°C) 12 VDD = 24 V 12 6 20 8 VDD = 24 V VDS 12 10 1 10 Total gate charge 5 4 VGS 6 0 0 200 16 Common source ID = 11 A Ta = 25°C Pulse test (V) Common source 30 1.5 15 Qg VGS 50 2 Gate-source voltage Capacitance C (pF) 3000 0 20 (nC) 2002-03-12 TPC8010-H rth − tw 1000 rth (°C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) 300 (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s 100 (2) (1) Transient thermal impedance 30 10 3 1 Single pulse 0.3 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 100 ID max (pulse)* 1 ms* 10 Drain current ID (A) 10 ms* 1 0.1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 VDSS max 1 Drain-source voltage VDS 10 100 (V) 6 2002-03-12 TPC8010-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 2002-03-12