TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) · High forward transfer admittance: |Yfs| = 31 S (typ.) · Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) · Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 kW) VDGR -30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -13 Pulse (Note 1) IDP -52 PD 1.9 W PD 1.0 W EAS 219 mJ IAR -13 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-20 TPC8107 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8107 TYPE Lot No. ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) (b) (a) Note 3: VDD = -24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = -13 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: · on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-02-20 TPC8107 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = -30 V, VGS = 0 V ¾ ¾ -10 mA V (BR) DSS ID = -10 mA, VGS = 0 V -30 ¾ ¾ V (BR) DSX ID = -10 mA, VGS = 20 V -15 ¾ ¾ Vth VDS = -10 V, ID = -1 mA -0.8 ¾ -2.0 VGS = -4 V, ID = -6.5 A ¾ 10 15 VGS = -10 V, ID = -6.5 A ¾ 5.5 7.0 VDS = -10 V, ID = -6.5 A 15.5 31 ¾ ¾ 5880 ¾ ¾ 1000 ¾ ¾ 1050 ¾ ¾ 11 ¾ ¾ 22 ¾ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = -10 V, VGS = 0 V, f = 1 MHz tr ID = -6.5 A VOUT 0V ton VGS -10 V Fall time 4.7 W Switching time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd RL = 2.3 W Turn-ON time VDD ~ - -15 V < Duty = 1%, tw = 10 ms VDD ~ - -24 V, VGS = -10 V, ID = -13 A V V mW S pF ns ¾ 110 ¾ ¾ 395 ¾ ¾ 130 ¾ ¾ 10 ¾ ¾ 30 ¾ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ¾ ¾ ¾ -52 A ¾ ¾ 1.2 V VDSF IDR = -13 A, VGS = 0 V 3 2003-02-20 TPC8107 ID – VDS -4 -2.8 Common source Ta = 25°C Pulse test -2.6 -8 -6 -3 -40 ID -12 Drain current -8 -2.2 -4 -4 -3 -10 -8 -6 Common source Ta = 25°C Pulse test -2.8 (A) (A) -2.4 ID -16 -10 ID – VDS -50 -30 Drain current -20 -20 -2.6 -2.4 -2.2 -10 VGS = -2 V VGS = -2 V 0 0 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS 0 0 -1.0 (V) -1 -2 Drain-source voltage ID – VGS (V) Drain-source voltage VDS (A) ID Drain current -10 25 100 0 0 -3 Gate-source voltage -0.4 -4 -0.2 -3 -0.1 ID = -13 A -6.5 VGS 0 0 -5 (V) -12 -16 VGS -20 (V) RDS (ON) – ID 100 Drain-source ON resistance RDS (ON) (mW) (S) -8 -4 Gate-source voltage 100 ïYfsï Forward transfer admittance (V) -0.3 |Yfs| – ID 25 30 Ta = -55°C 100 10 3 1 0.3 -0.1 -5 Common source Ta = 25°C Pulse test Ta = -55°C -2 -1 VDS -0.5 Common source VDS = -10 V Pulse test -40 -20 -4 VDS – VGS -50 -30 -3 30 VGS = -4 V 10 -10 3 1 Common source VDS = -10 V Pulse test -0.3 -1 -3 Drain current -10 ID -30 0.3 -0.1 -100 (A) Common source Ta = 25°C Pulse test -0.3 -1 -3 Drain current 4 -10 ID -30 -100 (A) 2003-02-20 TPC8107 RDS (ON) – Ta IDR – VDS -100 30 -5 20 ID = -13 A, -6.5 A, -3 A VGS = -4 V 10 ID = -13 A, -6.5 A, -3 A -10 0 -80 -40 0 40 80 120 -10 -1 Common source Ta = 25°C Pulse test -0.1 0 160 0.2 0.4 0.6 0.8 Drain-source voltage 1.0 VDS 1.2 (V) Vth – Ta Capacitance – VDS -2.0 10000 Gate threshold voltage Vth (V) Ciss 3000 (pF) VGS = 0 V -1 Ambient temperature Ta (°C) Capacitance C -3 (A) -10 Drain reverse current IDR Drain-source ON resistance RDS (ON) (mW) Common source Pulse test Coss 1000 Crss 300 Common source 100 VGS = 0 V f = 1 MHz Ta = 25°C 30 -0.1 -0.3 -1 -3 -10 Drain-source voltage VDS -30 -100 Common source VDS = -10 V ID = -1 mA Pulse test -1.6 -1.2 -0.8 -0.4 0 -80 (V) -40 0 40 80 120 160 Ambient temperature Ta (°C) PD – Ta (1) Device mounted on a glass-epoxy board (a) (Note 2a) t = 10 s Drain-source voltage (2) 0.8 0.4 (V) ID = -13 A VDD = -24 V Ta = 25°C VDS Pulse test -20 -20 -12 -6 VDD = -24 V -10 -10 -12 -6 VGS VDS (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.2 -30 Common source (V) 1.6 PD (W) (1) Drain power dissipation Dynamic input/output characteristics -30 Gate-source voltage 2.0 VGS 0 0 40 80 120 160 0 0 200 Ambient temperature Ta (°C) 40 80 120 160 0 200 Total gate charge Qg (nC) 5 2003-02-20 TPC8107 rth - tw Normalized transient thermal impedance rth (°C/W) 1000 100 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) t = 10 s 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area -100 ID max (pulse) * -10 Drain current ID (A) 1 ms* 10 ms* -1 -0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.01 -0.01 -0.1 VDSS max -1 Drain-source voltage -10 VDS -100 (V) 6 2003-02-20 TPC8107 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2003-02-20