TLP631,TLP632 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP631,TLP632 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 is no−base internal connection for high−EMI environments. • Collector−emitter voltage: 55 V (min.) • Current transfer ratio: 50% (min.) Rank GB: 100% (min.) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.4 g Pin Configurations (top view) TLP631 11−7A8 TLP632 1 6 1 6 2 5 2 5 3 4 3 4 1: Anode 2: Cathode 3: N.C. 1: Anode 2: Cathode 3: N.C. 4: Emitter 4: Emitter 5: Collector 5: Collector 6: Base 6: N.C 1 2007-10-01 TLP631,TLP632 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 60 mA ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Collector−base voltage (TLP631) VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage (TLP631) VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW ΔPT / °C −2.5 mW / °C BVS 5000 Vrms Forward current Detector LED Forward current derating (Ta ≥ 39°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta≥ 25°C) Isolation voltage (AC, 1 min., R.H. ≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP631,TLP632 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V Collector−base breakdown voltage (TLP631) V(BR) CBO IC = 0.1 mA 80 ― ― V Emitter−base breakdown voltage (TLP631) V(BR) EBO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 100 nA VCE = 24 V, Ta = 85°C ― 2 50 μA V = 0, f = 1 MHz ― 10 ― pF MIn. Typ. Max. Unit 50 ― 600 100 ― 600 Collector dark current ICEO Capacitance collector to emitter CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Symbol Test Condition IC / IF IF = 5 mA, VCE = 5 V Rank GB IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB ― 60 ― 30 ― ― VCE (sat) IC = 2.4 mA, IF = 8 mA ― ― 0.4 3 % % V 2007-10-01 TLP631,TLP632 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) CS Isolation resistance RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 5×10 AC, 1 minute Isolation voltage Min. 10 10 14 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 15 ― ― 25 ― ― 2 ― ― 12 ― ― 20 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 kΩ (Fig.1) RBE = 220 kΩ(TLP631) VCC = 5 V, IF = 16 mA μs μs μs Fig. 1 Switching time test circuit IF VCC IF tS RL RBE VCC 4.5V VCE VCE 0.5V tON 4 tOFF 2007-10-01 TLP631,TLP632 PC– Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 60 40 20 0 −20 120 80 40 0 20 40 60 80 100 0 -20 120 0 Ambient temperature Ta (°C) 20 40 Ta = 25°C (mA) 30 10 500 Forward current IF Pulse forward current IFP (mA) 120 50 Ta = 25°C 1000 300 100 50 30 10 3 10−3 10−2 3 10−1 3 Duty cycle ratio 5 3 1 0.5 0.3 0.1 0.4 10０ 3 0.6 0.8 DR ΔVF / ΔTa – IF 1.2 1.4 1.6 (V) IFP – VFP 1000 500 Pulse forward current IFP (mA) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.0 Forward voltage VF -3.2 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 100 IF – V F 100 Pulse width ≤ 100μs 3000 80 Ambient temperature Ta (°C) IFP – DR 5000 60 0.3 1 3 Forward current IF 10 300 100 50 30 10 1 0.4 30 (mA) Pulse width ≤ 100μs 5 3 Repetitive frequency = 100 Hz Ta = 25°C 0.8 1.2 1.6 Pulse forward voltage 5 2.0 2.4 VF (V) 2007-10-01 TLP631,TLP632 IC – VCE IC – VCE 80 30 Ta = 25°C Ta = 25°C 30 mA 20 mA 40 15 mA 10 mA PC MAX. 20 2 4 6 8 Collector-emitter voltage 20 mA 15 10 mA 10 5 mA IF = 2 mA 0 0 10 0.2 VCE (V) 0.4 IC – IF 1.0 1.2 1.4 VCE (V) IC/IF – IF Current transfer ratio IC/IF (%) (mA) Collector current IC 0.8 1000 50 30 Sample A 10 Sample B 5 3 1 05 0.3 Ta = 25°C VCE = 5 V 0.1 0.05 0.03 0.3 1 3 10 30 100 300 Ta = 25°C 30 VCE = 5 V IPB (μA) 100 kΩ 500 kΩ VCC IF A 0.5 R BE 0.3 1 3 3 10 30 Forward current IF (mA) 10 30 100 IPB – IF TLP631 50 kΩ RBE = ∞ 1 Forward current IF（mA） 300 0.3 0.1 0.1 Sample B (mA) Base photo current 1 50 10 0.3 1000 Ta = 25°C 50 V CE = 5 V 30 3 Sample A 100 IＣ –IF at RBE TLP631 5 300 VCE = 0.4 V 100 10 500 VCE = 0.4 V Forward current IF (mA) 0.6 Collector-emitter voltage 100 Collector current IC 40 mA 30 mA 20 5 IF = 5 mA 0 0 50 mA (mA) 50 mA Collector current IC Collector current IC (mA) 25 60 Ta = 25°C 100 50 VCB = 0 V 30 VCB = 5 V 10 5 3 VCB IF 1 0.5 A 0.3 0.1 0.1 100 0.3 1 3 10 Forward current IF 6 30 100 300 (mA) 2007-10-01 TLP631,TLP632 ICEO – Ta VCE(sat) – Ta 0.20 IF = 5 mA IC = 1 mA Collector-emitter saturation voltage VCE(sat) (V) Collector dark current ICEO (μA) 101 VCE = 24 V 100 10 V 5V 10-1 0.16 0.12 0.08 0.04 10-2 0 -40 10 -3 10 -4 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 120 Ambient temperature Ta (°C) TLP631 Switching Time – RL 50 tOFF 30 Switching time (μs) ts 10 Ta = 25°C IF = 16 mA VCC = 5 V 5 RBE = 220 kΩ 3 tON 1 1 3 10 30 Load resistance RL IC – Ta 100 100 (kΩ) VCE = 5 V IF = 25 mA 50 30 TLP631 10 mA Switching Time – RBE 5 mA 10 tOFF 30 5 ts Switching time (μs) Collector current IC mA) 50 3 1 mA 1 0.5 Ta = 25°C IF = 16 mA VCC = 5 V 5 RL = 1.9 kΩ 3 tON 0.5 mA 0.3 0.1 10 -20 0 20 40 60 80 1 100k 100 Ambient temperature Ta (°C) 300k 1M 3M ∞ Base-emitter resistance RBE (Ω) 7 2007-10-01 TLP631,TLP632 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01