TOSHIBA TLP627_07

TLP627,TLP627-2,TLP627-4
TOSHIBA PHOTOCOUPLER
GaAs IRED & PHOTO-TRANSISTOR
TLP627,TLP627-2,TLP627-4
Unit in mm
PROGRAMMABLE CONTROLLERS
DC-OUTPUT MODULE
TELECOMMUNICATION
The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared
emitting diode optically coupled to a darlington connected phototransistor
which has an integral base-emitter resistor to optimize switching speed and
elevated temperature characteristics.
The TLP627-2 offers two isolated channels in a eight lead plastic DIP,
while the TLP627-4 provide four isolated channels per package.
Collector-Emitter Voltage
Current Transfer Ratio
Isolation Voltage
UL Recognized
z
z
z
z
UL Recognized
BSI Approved
11−5B2
Weight: 0.26 g
: 300V(Min)
: 1000%(Min)
: 5000Vrms(Min)
: UL1577,File No.E67349
MADE IN JAPAN
TOSHIBA
MADE IN THAILAND
E67349
*1
E152349
*1
7426, 7427
*2
7426, 7427
*2
*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
TOSHIBA
PIN CONFIGURATION (TOP VIEW)
Weight: 0.54 g
TLP627-2
TLP627
TLP627-4
1
4
1
8
1
16
2
3
2
7
2
15
3
6
3
14
4
5
4
13
5
12
6
11
7
10
8
9
1: ANODE
2: CATHODE
3: EMITTER
4:COLLECTOR
1,3: ANODE
2,4: CATHODE
5,7: EMITTER
6,8:COLLECTOR
11−10C4
1,3,5,7
: ANODE
2,4,6,8
: CATHODE
9,11,13,15 : EMITTER
10,12,14,16 :COLLECTOR
1
TOSHIBA
11−20A3
Weight: 1.1 g
2007-10-01
TLP627,TLP627-2,TLP627-4
Absolute Maximum Ratings (Ta=25°C)
RATING
CHARACTERISTIC
SYMBOL
Forward Current
Forward Current Derating
LED
Pulse Forward Current
Power Dissipation
(1 Circuit)
DETECTOR
Power Dissipation Derating (Ta≥25°C,1 Circuit)
UNIT
TLP627
TLP627-2
TLP627-4
IF
60
50
mA
∆IF /°C
−0.7(Ta≥39°C)
−0.5(Ta≥25°C)
mA /°C
IFP
1(100μs pulse,100pps)
A
PD
100
70
mW
∆ PD /°C
-1.0
-0.7
mW /°C
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Collector-Emitter Voltage
VCEO
300
V
Emitter -Collector Voltage
VECO
0.3
V
IC
150
mA
Collector Current
Collector Power Dissipation
(1 Circuit)
Collector Power Dissipation Derating
(Ta≥25°C,1 Circuit)
PC
150(*300)
100
mW
∆ Pc /°C
-1.5(*-3.5)
-1.0
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
−55~100
°C
Storage Temperature Range
Tstg
−55~125
°C
Lead Soldering Temperature (10s)
Tsold
260(10sec)
°C
Total Package Power Dissipation
Total Package Power Dissipation Derating
Isolation Voltage
(Ta≥25°C,1 Circuit)
(AC,1min. , R.H.≤60%)
(Note1)
PT
250(*320)
150
mW
∆ PT/°C
-2.5(*-3.2)
-1.5
mW /°C
BVS
5000
Vrms
*IF=20mA Max
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note1)Device considered a two terminal device : LED side pins Shorted together and DETECTOR side pins shorted
together.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
MIN.
Supply Voltage
VCC
Forward Current
IF
Collector Current
Operating Temperature
TYP.
MAX.
UNIT
—
—
200
V
—
16
25
mA
IC
—
—
120
mA
Topr
−25
—
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP627,TLP627-2,TLP627-4
Individual Electrical Characteristics (Ta=25°C)
LED
CHARACTERISTIC
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse Current
IR
VR = 5 V
—
—
10
μA
Capacitance
CT
V=0,
—
30
—
pF
Collector-Emitter
Breakdown Voltage
DETECTOR
SYMBOL
Emitter-Collector
Breakdown Voltage
Collector Dark Current
Capacitance Collector
to Emitter
f=1MHz
V(BR)CEO
IC = 0.1mA
300
—
—
V
V(BR)ECO
IE = 0.1mA
0.3
—
—
V
VCE = 200V
—
10
200
nA
VCE = 200V , Ta = 85°C
—
—
20
μA
V=0 , f=1MHz
—
10
—
pF
MIN.
TYP.
MAX.
UNIT
ICEO
CCE
Coupled Electrical Characteristics (Ta=25°C)
CHARACTERISTIC
Current Transfer Ratio
Saturated CTR
Collector-Emitter
Saturation Voltage
SYMBOL
TEST CONDITION
IC/IF
IF=1mA , VCE=1V
1000
4000
—
%
IC/IF(sat)
IF=10mA , VCE=1V
500
—
—
%
IC=10mA , IF=1mA
—
—
1.0
IC=100mA , IF=10mA
0.3
—
1.2
MIN.
TYP.
MAX.
UNIT
—
0.8
—
pF
—
Ω
VCE(sat)
V
Isolation Electrical Characteristics (Ta=25°C)
CHARACTERISTIC
Capacitance Input to Output
Isolation Resistance
SYMBOL
CS
RS
TEST CONDITION
VS=0 , f=1MHz
VS=500V , R.H.≤60%
AC, 1minute
Isolation
Voltage
BVs
5×10
10
10
14
5000
—
—
AC, 1second, in oil
—
10000
—
DC, 1 minute, in oil
—
10000
—
3
Vrms
Vdc
2007-10-01
TLP627,TLP627-2,TLP627-4
Switching Characteristics (Ta=25°C)
CHARACTERISTIC
SYMBOL
Rise Time
tr
Fall Time
tf
Turn-on Time
ton
Turn-off Time
toff
Turn-on Time
tON
Strage Time
ts
Turn-off Time
tOFF
TEST CONDITION
MIN.
TYP.
MAX.
—
40
—
—
15
—
—
50
—
—
15
—
—
5
—
—
40
—
—
80
—
VCC=10V
IC=10mA
RL=100Ω
RL=180Ω (Fig.1)
VCC=10V , IF=16mA
UNIT
μs
Fig.1 SWITCHING TIME TEST CIRCUIT
VCC
IF
RL
VCE
IF
VCE
9V
ts
VCC
1V
tON
tOFF
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TLP627,TLP627-2,TLP627-4
5
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TLP627,TLP627-2,TLP627-4
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TLP627,TLP627-2,TLP627-4
7
2007-10-01
TLP627,TLP627-2,TLP627-4
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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