TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application DC-DC Converters Unit: mm · Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) · High forward transfer admittance: |Yfs| = 1.35 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 200 V) · Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 kW) VDGR 200 V Gate-source voltage VGSS ±30 V Drain current DC (Note 1) ID 1.8 Pulse (Note 1) IDP 7.2 PD 1.9 Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) A W 1.0 W EAS 2.05 mJ IAR 1.8 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) TO-92 JEITA PD (Note 2b) JEDEC ― TOSHIBA 2-6J1B Weight: 0.80 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-03-04 TPC8012-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8012 H TYPE ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) (b) (a) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = 1.8 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: · on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-03-04 TPC8012-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 200 V, VGS = 0 V ¾ ¾ 100 mA ¾ ¾ V Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 Vth VDS = 10 V, ID = 1 mA 3.0 ¾ 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.9 A ¾ 0.28 0.40 W Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.9 A 0.65 1.35 ¾ S Input capacitance Ciss ¾ 440 ¾ Reverse transfer capacitance Crss ¾ 80 ¾ Output capacitance Coss ¾ 260 ¾ ¾ 23 ¾ ¾ 28 ¾ Gate threshold voltage tr Turn-ON time ton 50 W Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ID = 0.9 A VOUT 10 V VGS 0V RL = 111 W Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ~ - 100 V < Duty = 1%, tw = 10 ms VDD ~ - 160 V, VGS = 10 V, ID = 1.8 A pF ns ¾ 22 ¾ ¾ 73 ¾ ¾ 11 ¾ ¾ 6 ¾ ¾ 5 ¾ Min Typ. Max nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse Symbol (Note 1) Test Condition ¾ IDRP VDSF IDR = 1.8 A, VGS = 0 V 3 Unit ¾ ¾ 7.2 A ¾ ¾ -1.5 V 2002-03-04 TPC8012-H RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-03-04