ETC TN2010T

TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V)
rDS(on) Max ()
VGS(th) (V)
ID (A)
200
11
0.8 to 3.0
0.12
Features
Benefits
Applications
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
Telephone Mute Switches, Ringer Circuits
Power Supply, Converters
Motor Control
Low On-Resistance: 9.5 Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
TN2010T (R1)*
*Marking Code for TO-236
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
20
Continuous Drain Current
(TJ = 150C)
= = Pulsed Drain Currenta
Power Dissipation
= Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
0.12
ID
IDM
= Unit
0.08
A
0.34
0.35
PD
0.22
W
RthJA
357
C/W
TJ, Tstg
–55 to 150
C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
Siliconix
S-52426—Rev. C, 14-Apr-97
1
TN2010T
Specificationsa
Limits
Parameter
Symbol
Test Conditions
Min
Typb
V(BR)DSS
VGS = 0 V, ID = 100 mA
200
220
VGS(th)
VDS = VGS, ID = 0.25 mA
0.8
1.6
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 160 V, VGS = 0 V
1
Max
Unit
Static
Drain-SourceBreakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentc
ID(on)
Drain Source On-Resistance
Drain-Source
On Resistancec
rDS(on)
DS( )
Forward Transconductance c
Diode Forward Voltage
TJ = –55C
VDS = 10 V, VGS = 10 V
V
3.0
10
0.3
nA
mA
mA
VGS = 10 V, ID = 0.1 A
9.5
11
VGS = 4.5 V, ID = 0.05 mA
10
15
gfs
VDS = 10 V, ID = 0.1 A
300
mS
VSD
IS = 0.085 A, VGS = 0 V
0.8
V
W
Dynamic
Total Gate Charge
Qg
1750
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
300
Input Capacitance
Ciss
35
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 100 V, VGS = 10 V, ID ] 0.1 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
275
6
pC
pF
2
Switchingd
Turn On Time
Turn-On
Turn-Off Time
td(on)
tr
td(off)
4
VDD = 60 V, RL = 600 W
ID ^ 0.1
01A
A, VGEN = 10 V
RG = 6 W
tf
16
ns
16
45
Notes
a. TA = 25C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
Siliconix
S-52426—Rev. C, 14-Apr-97
TN2010T
Typical Characteristics (25C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
0.5
0.5
4V
VGS = 10 V
0.4
I D – Drain Current (A)
I D – Drain Current (A)
TC = –55C
3.4 V
0.4
3.2 V
0.3
3.0 V
2.8 V
0.2
2.6 V
0.1
2.4 V
2.2 V
2.0 V
0
0
2
4
6
8
25C
0.3
125C
0.2
0.1
0
10
0
VDS – Drain-to-Source Voltage (V)
0.5
1.0
On-Resistance vs. Drain Current
2.5
3.0
3.5
4.0
Capacitance
100
80
12
C – Capacitance (pF)
rDS(on) – On-Resistance ( 2.0
VGS – Gate-to-Source Voltage (V)
16
VGS = 4.5 V
VGS = 10 V
8
4
60
Ciss
40
Coss
20
0
Crss
0
0
0.05
0.10
0.15
0.20
0.25
0.30
0
0.35
ID – Drain Current (A)
12
8
4
0
0
500 1000 1500 2000 2500 3000 3500 4000
Qg – Total Gate Charge (pC)
Siliconix
S-52426—Rev. C, 14-Apr-97
2.5
rDS(on) – On-Resistance (
(Normalized)
VDS = 100 V
ID = 100 mA
16
5
10
15
20
25
VDS – Drain-to-Source Voltage (V)
Gate Charge
20
VGS – Gate-to-Source Voltage (V)
1.5
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V
ID = 100 mA
1.5
VGS = 4.5 V
ID = 50 mA
1.0
0.5
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
3
TN2010T
Typical Characteristics (25C Unless Otherwise Noted)
10.000
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
12.0
rDS(on) – On-Resistance ( W )
I S – Source Current (A)
11.5
1.000
TJ = 150C
0.100
TJ = 25C
0.010
0.001
0.30
11.0
10.5
rDS @ ID = 100 m A
10.0
rDS @ ID = 50 m A
9.5
9
0.45
0.60
0.75
0.90
1.05
3
1.20
VSD – Source-to-Drain Voltage (V)
0.3
5
7
9
11
13
15
17
19
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2
ID = 250 mA
VGS(th) Variance (V)
0.1
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–75 –50 –25
0
25
50
75
100 125 150
TJ – Temperature (C)
4
Siliconix
S-52426—Rev. C, 14-Apr-97