SUD50N02-06 New Product Vishay Siliconix N-Channel 20-V (D-S), 175C MOSFET rDS(on) () ID (A)a, b 0.006 @ VGS = 4.5 V 30 0.009 @ VGS = 2.5 V 25 VDS (V) 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-06 S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 12 TA = 25C Continuous Drain Currenta, b TA = 100C Pulsed Drain Current 21 A Maximum Power Dissipation 100 IS TC = 25C TA = 25C Operating Junction and Storage Temperature Range V 30 ID IDM Continuous Source Current (Diode Conduction)a, b Unit 30 100 PD W 8.3a, b TJ, Tstg C –55 to 175 Parameter Maximum Junction-to-Ambient Junction to Ambienta Symbol t 10 sec. Maximum 15 18 40 50 1.2 1.5 RthJA hJA Steady State Maximum Junction-to-Case Typical RthJC Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board b. t 10 sec. Document Number: 71136 S-01665—Rev. B, 31-Jul-00 www.vishay.com 2-1 SUD50N02-06 New Product Vishay Siliconix _ Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb b Drain-Source On-State Resistance D i S O S R i Forward Transconductanceb IDSS ID(on) rDS(on) gfs VDS = 5 V, VGS = 4.5 V V 50 mA A VGS = 4.5 V, ID = 30 A 0.006 VGS = 4.5 V, ID =30 A, TJ = 125_C 0.009 VGS = 2.5 V, ID = 20 A 0.009 VDS = 5 V, ID = 30 A nA 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 6600 VGS = 0 V, VDS = 20 V, f = 1 MHz pF F 1150 600 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 25 40 tr 120 180 80 120 100 150 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 65 VDS = 10 V, 4.5 V, ID = 50 A V VGS = 4 5V 130 nC C 13 14 VDD = 10 V V,, RL = 0 0.2 2W ID ^ 50 A, A VGEN = 4 4.5 5V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 100 ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71136 S-01665—Rev. B, 31-Jul-00 SUD50N02-06 New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 120 3.5 V VGS = 4.5, 4 V 100 200 I D – Drain Current (A) I D – Drain Current (A) 3V 150 2.5 V 100 2V 50 80 60 40 TC = 125C 20 1V 25C 1.5 V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 160 0.010 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 25C 120 125C 80 40 0 0.008 VGS = 2.5 V 0.006 VGS = 4.5 V 0.004 0.002 0 0 20 40 60 80 0 100 20 40 ID – Drain Current (A) 80 100 120 150 ID – Drain Current (A) Capacitance Gate Charge 10000 V GS – Gate-to-Source Voltage (V) 12 8000 C – Capacitance (pF) 60 Ciss 6000 4000 Coss 2000 VDS = 10 V ID = 50 A 9 6 3 Crss 0 0 0 4 8 12 16 VDS – Drain-to-Source Voltage (V) Document Number: 71136 S-01665—Rev. B, 31-Jul-00 20 0 30 60 90 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUD50N02-06 New Product Vishay Siliconix _ On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 4.5 V ID = 30 A 1.2 0.8 TJ = 150_C TJ = 25_C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Avalanche Drain Current vs. Ambient Temperature Safe Operating Area 1000 40 Limited by rDS(on) 10 ms 100 ms 100 I D – Drain Current (A) I D – Drain Current (A) 32 24 16 8 10 10 ms 100 ms 1 1s 0.1 0 1 ms 10 s 100 s dc TA = 25_C Single Pulse 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71136 S-01665—Rev. B, 31-Jul-00