TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.9 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement model: Vth = −0.8 to −2.0 V, (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Drain-gate voltage (RGS = 20 kΩ) VDGR -30 V Gate-source voltage VGSS ±20 V Drain current DC (Note 1) ID -3.2 Pulse (Note 1) IDP -12.8 A Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (1) 1.35 PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 PD (2) 0.33 EAS 0.67 mJ Avalanche current IAR -1.6 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-pulse avalanche energy (Note 4) JEDEC ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) W Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Caution: This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPCF8304 Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit °C/W °C/W Marking (Note 6) Lot code (month) Part No. (or abbreviation code) Pin #1 Note 1: Lot No. F5D Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = -24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -1.6 A Note 5: Repetitive rating; pulse width limited by max channel temperature Note 6: ● to the lower left of the Part No. marking indicates Pin 1. 2 2006-11-17 TPCF8304 Electrical Characteristics (Ta = 25°C) Gate leakage current Symbol IGSS Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance ― ― ±10 μA μA ― ― -10 -30 ― ― V (BR) DSX ID = -10 mA, VGS = 20 V -15 ― ― Vth VDS = -10 V, ID = -1 mA -0.5 ― -1.2 RDS (ON) VGS = -4.5 V, ID = -1.6 A ― 80 105 RDS (ON) VGS = -10 V, ID = -1.6 A ― 60 72 |Yfs| VDS = -10 V, ID = -1.6 A 2.9 5.9 ― ― 600 ― ― 60 ― ― 70 ― ― 5.3 ― ― 12 ― ― 8.4 ― ― 34 ― ― 14 ― ― 1.4 ― ― 2.7 ― Output capacitance Coss tr ton VDS = -10 V, VGS = 0 V, f = 1 MHz 4.7 Ω tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd ID = -1.6 A VOUT VGS 0 V -10 V Switching time Total gate charge (gate-source plus gate-drain) Unit VDS = -30 V, VGS = 0 V Ciss Turn-off time Max ID = -10 mA, VGS = 0 V Crss Fall time Typ. IDSS Reverse transfer capacitance Turn-on time VGS = ±16 V, VDS = 0 V Min V (BR) DSS Input capacitance Rise time Test Condition RL = 9.38 Ω Characteristic VDD ∼ − -15 V < Duty = 1%, tw = 10 μs ∼ -24 V, VGS = -10 V, VDD − ID = -3.2 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ― ― ― -12.8 A ― ― 1.2 V VDSF IDR = -3.2 A, VGS = 0 V 3 2006-11-17 TPCF8304 ID – VDS ID – VDS -5 -3.5 -10 -6 -3.0 Drain current ID -2.7 -2.6 -2 -2.5 -1 -6 -2.8 -2.6 -0.4 -0.6 Drain-source voltage -0.8 VDS -2.5 VGS = -2.3 V 0 0 -2.7 -4 -2 VGS = -2.3 -0.2 -4.5 -6 (A) (A) -2.8 -3 -1.0 0 (V) -2 -1 VDS (V) VDS – VGS Common source Common source (V) Pulse test Ta= 25℃ -1.6 Pulse test VDS -6 Drain-source voltage (A) Drain current ID -5 -4 -2.0 VDS = -10 V -4 -2 Ta = −55°C 100 0 -2 -1 -1.2 -0.8 -1.6 -0.4 ID = -3.2A -0.8 25 -3 Gate-source voltage VGS 0 -5 -4 0 (V) -4 -2 VGS -8 -10 (V) RDS (ON) – ID 1000 Common source VDS = -10 V Ta = 25°C Pulse test Pulse test Drain-source ON resistance RDS (ON) (mΩ) Common source Ta = −55°C 10 100 25 1 -0.1 -6 Gate-source voltage ⎪Yfs⎪ – ID 100 Forward transfer admittance ⎪Yfs⎪ (S) -3 Drain-source voltage ID – VGS -8 0 Common source Ta = 25°C Pulse test -3.5 -8 -4.5 0 -10 -3.0 Drain current ID -4 -10 Common source Ta = 25°C Pulse test -0.3 -1 -3 100 -10 10 0.1 -10 VGS = -4.5 V -1 -10 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPCF8304 RDS (ON) – Ta IDR – VDS 10 Drain reverse current IDR (A) 120 ID = -0.8A, -1.6A, -3.2A 90 VGS = -4.5V 60 ID = -0.8A, -1.6A, -3.2A VGS = -10V 30 Common source -10 5 -1.0 -3.0 3 VGS = 0 V -5.0 1 0.5 0.3 Common source Ta = 25°C Pulse test 0 −80 −40 0 40 80 120 Pulse test 0.1 0 160 0.3 Ambient temperature Ta (°C) 0.6 Drain-source voltage Capacitance – VDS 1.5 1.2 VDS (V) Vth – Ta -2.0 Vth (V) 1000 100 Gate threshold voltage (pF) Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 -0.1 -1.5 -1.0 Common source -0.5 VDS = -10 V ID = -1mA Pulse test -1 -3 -5 Drain-source voltage -30 -50 -100 -10 VDS 0 −80 −40 (V) 0 80 120 160 Ambient temperature Ta (°C) Dynamic input/output characteristics PD – Ta 2.0 40 -15 -30 Device mounted on a glass-epoxy board (a) (Note 2a) (3) Single-device operation (Note 3a) (1) (4) Single-device value at dual operation (Note 3b) ｔ＝5s 1.2 -25 -20 (2) 0.8 (3) 0.4 (V) (V) Device mounted on a glass-epoxy board (b) (Note 2b) VDS (2) Single-device value at dual operation (Note 3b) 1.6 Drain-source voltage Drain power dissipation PD (W) (1) Single-device operation (Note 3a) VDS VDD = -24V VGS -10 VDD = -6V -15 -12 -10 -24 -6 40 80 120 160 0 0 200 Ambient temperature Ta (°C) Common -5 source ID = -3.2 A -5 Ta = 25°C (4) 0 0 -12 Pulse test 4 8 12 VGS Capacitance C 0.9 Gate-source voltage Drain-source ON resistance RDS (ON) (mΩ) 150 0 16 Total gate charge Qg (nC) 5 2006-11-17 TPCF8304 rth – tw Transient thermal impedance rth (℃/W) 1000 Single pulse (4) (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area -100 Drain current ID (A) ID max (pulsed) * -10 1 ms * 10 ms * -1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 Drain-source voltage VDSS max -10 -100 VDS (V) 6 2006-11-17 TPCF8304 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-17