TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V Drain current Drain power dissipation (t = 10 s) DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.1 Single-device operation (Note 3a) A PD (2) 0.75 Single-device operation (Note 3a) PD (1) 0.6 Single-device value (Note 2b) at dual operation (Note 3b) PD (2) 0.35 Single pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Repetitive avalanche energy Single-device value at dual operation ― JEITA ― TOSHIBA W Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation (t = 10 s) JEDEC W 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 (Note 2a, 3b, 5) Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-01-16 TPCS8204 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 114 Rth (ch-a) (2) 167 Rth (ch-a) (1) 208 Rth (ch-a) (2) 357 Unit °C/W °C/W Marking (Note 6) Part No. (or abbreviation code) S8204 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2007-01-16 TPCS8204 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 VGS = 2.0 V, ID = 4.2 A ⎯ 24 35 VGS = 2.5 V, ID = 4.2 A ⎯ 18 22 VGS = 4.0 V, ID = 4.8 A ⎯ 13 17 VDS = 10 V, ID = 3.0 A 7.5 15 ⎯ ⎯ 2160 ⎯ ⎯ 210 ⎯ ⎯ 230 ⎯ ⎯ 5 ⎯ ⎯ 13 ⎯ ⎯ 10 ⎯ ⎯ 53 ⎯ ⎯ 22 ⎯ ⎯ 4 ⎯ ⎯ 5 ⎯ Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-ON time ton Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) tf toff 0V 4.7 Ω Switching time ID = 3 A 5V VOUT RL = 3.3 Ω Drain-source breakdown voltage VDD ∼ − 10 V Duty < = 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ∼ − 16 V, VGS = 5 V, ID = 6 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 24 A ⎯ ⎯ −1.2 V VDSF IDR = 6 A, VGS = 0 V 3 2007-01-16 TPCS8204 ID – VDS 5 4, 5 4, 5 1.5 Common source 2 2 8 Common source Drain current ID (A) Drain current ID (A) 4 ID – VDS 10 Ta = 25°C, Pulse test 3 1.4 2 1.3 1 Ta = 25°C 1.7 6 1.5 4 1.4 2 0.4 0.8 1.2 Drain-source voltage 1.6 VGS = 1.2 V 1.3 VGS = 1.2 V 0 0 Pulse test 1.6 0 0 2.0 VDS (V) 1 2 3 Drain-source voltage ID – VGS 4 VDS (V) VDS – VGS 10 0.8 Common source Common source VDS (V) Pulse test 6 Drain-source voltage Drain current ID (A) Ta = 25°C VDS = 10 V 8 4 25 2 100 0 0 5 Ta = −55°C 1 2 3 Gate-source voltage 4 Pulse test 0.6 0.4 ID = 1.5 A 0.2 12 6 0 0 5 3 VGS (V) 2 4 6 Gate-source voltage |Yfs| – ID 8 10 VGS (V) RDS (ON) – ID 100 Ta = −55°C 25 Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) 100 100 10 VGS = 2 V 2.5 4 10 Common source Common source VDS = 10 V Ta = 25°C Pulse test 1 0.1 1 Pulse test 1 0.1 10 Drain current ID (A) 1 10 Drain current ID (A) 4 2007-01-16 TPCS8204 RDS (ON) – Ta IDR – VDS 10 40 Common source (A) Pulse test 30 Drain reverse current IDR 25 VGS = 2 V 2.5 20 4 15 10 ID = 1.5, 3, 6 A 10, 5, 3 1 0 VGS = −1 V 3 Common source Ta = 25°C 5 Pulse test −40 0 40 80 120 1 0 160 −0.2 Ambient temperature Ta (°C) −0.4 Capacitance – VDS Vth (V) Gate threshold voltage (pF) Capacitance C Coss Crss 100 Common source Ta = 25°C VGS = 0 V f = 1 MHz VDS = 10 V 1.6 ID = 200 μA 1.2 1.0 0.8 0.6 0.4 100 10 VDS (V) (4) 0.2 0 0 50 100 80 120 160 Dynamic input/output characteristics Drain-source voltage Drain power dissipation PD (W) 0.4 40 20 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (3) 0 VDS (V) PD – Ta 0.6 −40 Ambient temperature Ta (°C) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) (2) Pulse test 1.4 0 −80 Drain-source voltage 0.8 Common source 1.8 0.2 1 (1) −1.2 Vth – Ta 1000 1.2 −1.0 VDS (V) 2.0 Ciss 1 −0.8 Drain-source voltage 10000 10 0.1 −0.6 150 16 10 8 VDS 8 4 12 6 VDD = 16 V 8 4 Part 2 4 0 0 200 Common source ID = 6 A Ta = 25°C, Pulse test 8 16 24 VGS (V) 0 −80 Gate-source voltage Drain-source ON resistance RDS (ON) (mΩ) 35 0 32 Total gate charge Qg (nC) Ambient temperature Ta (°C) 5 2007-01-16 TPCS8204 rth − tw 1000 (4) Normalized transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 Single-device value at dual operation (Note 3b) 50 30 ID max (pulse) * Drain current ID (A) 10 1 ms * 10 ms * 5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 Drain-source voltage VDSS max 3 10 30 100 VDS (V) 6 2007-01-16 TPCS8204 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-01-16