TOSHIBA TPCP8201_07

TPCP8201
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOS III)
TPCP8201
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
0.33±0.05
0.05 M A
5
Lead(Pb)-Free
•
Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
•
High forward transfer admittance:|Yfs| = 7.0 S (typ.)
•
Low leakage current: IDSS = 10 μA (VDS = 30 V)
•
0.475
1
Rating
VDSS
30
V
30
V
Gate-source voltage
VGSS
±20
V
ID
4.2
A
IDP
16.8
Single-device operation
(Note 3a)
PD (1)
1.48
Single-device value at
dual operation
(Note 3b)
PD (2)
1.23
Single-device operation
(Note 3a)
PD (1)
0.58
Single-device value at
dual operation
(Note 3b)
PD (2)
0.36
EAS
2.86
mJ
Avalanche current
IAR
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain power
dissipation
(t = 5 s)
(Note 2a)
Drain power
dissipation
(t = 5 s)
(Note 2b)
Pulse
Single pulse avalanche energy
(Note 1)
(Note 4)
S
0.28 +0.1
-0.11
0.17±0.02
Unit
VDGR
Drain current
0.025
S
Drain-gate voltage (RGS = 20 kΩ)
(Note 1)
A
0.8±0.05
Drain-source voltage
DC
0.05 M B
2.9±0.1
Absolute Maximum Ratings (Ta = 25°C)
Symbol
B
0.65
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Characteristics
4
2.8±0.1
•
2.4±0.1
8
+0.13
1.12 -0.12
1.12 +0.13
-0.12
1.Source1
5.Drain2
2.Gate1
6.Drain2
3.Source2
7.Drain1
4.Gate2
8.Drain1
JEDEC
―
JEITA
―
TOSHIBA
W
0.28 +0.1
-0.11
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
Note: For Notes 1 to 6, refer to the next page.
8
7
6
5
1
2
3
4
Marking (Note 6)
Using continuously under heavy loads (e.g. the application of high
8
7
6
5
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
8201
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
*
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
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2
3
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Lot No.
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TPCP8201
Thermal Characteristics
Characteristics
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Symbol
Max
Rth (ch-a) (1)
84.5
Rth (ch-a) (2)
101.6
Rth (ch-a) (1)
215.5
Rth (ch-a) (2)
347.2
Unit
°C/W
°C/W
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
25.4
25.4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
(a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.1 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
※ Weekly code (3 digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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2007-01-16
TPCP8201
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
VDS = 10 V, ID = 1 mA
1.3
⎯
2.5
VGS = 4.5 V, ID = 2.1 A
⎯
58
77
VGS = 10 V, ID = 2.1 A
⎯
38
50
VDS = 10 V, ID = 2.1 A
3.5
7.0
⎯
⎯
470
⎯
⎯
60
⎯
⎯
80
⎯
⎯
5.2
⎯
⎯
8.3
⎯
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Switching time
Fall time
0V
ton
4.7 Ω
Turn-on time
ID = 2.1 A
VOUT
10 V
RL = 7.14Ω
Drain-source breakdown
voltage
tf
V
V
mΩ
S
pF
ns
⎯
4.0
⎯
⎯
22
⎯
⎯
10
⎯
⎯
1.7
⎯
⎯
2.4
⎯
VDD ∼
− 15 V
Turn-off time
Total gate charge
(gate-source plus gate-drain)
toff
Duty <
= 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 4.2 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
16.8
A
⎯
⎯
−1.2
V
VDSF
IDR = 4.2 A, VGS = 0 V
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2007-01-16
TPCP8201
ID – VDS
ID – VDS
4.5
10
3.8
3.5
Common source
Ta = 25°C
Pulse test
6.0
ID
3
3.2
Drain current
Drain current
ID
(A)
8.0
4
10
(A)
5
2
3.0
1
10
8
Common source
Ta = 25°C
Pulse test
8.0
6.0
4.5
3.8
6
3.5
4
3.2
2
3.0
VGS = 2.8 V
0
0
0.2
0.6
0.4
0.8
Drain−source voltage
VDS
0
1.0
VGS = 2.8 V
0
(V)
1
Drain−source voltage
ID – VGS
(V)
VDS – VGS
Common source
VDS (V)
Common source
VDS = 10 V
Pulse test
6
Drain−source voltage
ID
(A)
VDS
2.0
8
Drain current
5
4
3
2
4
2
25
100
0
Ta = −55°C
0
1
4
3
2
Gate−source voltage
VGS
Ta= 25℃
1.6
1.2
0.8
0.4
2
0
(V)
2
10
8
6
4
Gate-source voltage
⎪Yfs⎪ – ID
100
ID = 4A
1
0
5
Pulse test
VGS
(V)
RDS (ON) – ID
100
Common source
Drain−source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance
⎪Yfs⎪ (S)
VDS = 10 V
Pulse test
Ta = −55°C
10
100
25
1
4.5
30
VGS = 10V
Common source
Ta = 25°C
0.1
0
0.3
3
1
Drain current
ID
10
0.1
10
(A)
Pulse test
1
Drain current
4
10
ID
(A)
2007-01-16
TPCP8201
RDS (ON) – Ta
IDR – VDS
10
120
ID = 4A
2A
80
1A
VGS = 4.5V
60
VGS = 10V
40
(A)
100
5
IDR
10
Pulse test
3
Drain reverse current
Drain−source ON resistance
RDS (ON) (m Ω)
Common source
ID = 4, 2, 1A
20
5.0
3.0
1.0
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse test
0
−80
−40
0
40
80
Ambient temperature
120
Ta
0.1
0
160
-0.2
(°C)
-0.4
Capacitance – VDS
Common source
VGS = 0 V
Ta = 25°C
3
5
Drain−source voltage
10
30 50
VDS
(V)
1
120
Common source
VDS = 10 V
ID = 200μA
Pulse test
0
−80
100
−40
1.2
VDS (V)
0.8
(3)
0.4 (4)
25
50
75
100
(°C)
125
Ambient temperature
150
Ta
175
15
30
Drain−source voltage
(W)
(2)
Ta
160
Dynamic input/output
characteristics
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t=5s
(1)
40
Ambient temperature
PD – Ta
2.0
0
25 VDD = 24V
VGS
20
VDS
12
10
24
6
5
12
Common source
5
ID = 4.0A
Ta = 25°C
5
Pulse test
4
8
Total gate charge
(°C)
10
VDD = 6V
15
0
0
200
(V)
1
0.3
2
12
Qg
16
VGS
1
0.1
PD
80
Vth (V)
Crss
f = 1 MHz
Drain power dissipation
(V)
Gate−source voltage
Capacitance
Gate threshold voltage
Coss
C
(pF)
100
0
0
-1.2
-1.0
VDS
3
Ciss
1.6
-0.8
Vth – Ta
1000
10
-0.6
Drain-source voltage
0
(nC)
2007-01-16
TPCP8201
rth – tw
Transient thermal impedance
rth (℃/W)
1000
Single pulse
(4)
(3)
(2)
(1)
100
10
1
0.001
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
(A)
ID max (Pulse) *
1 ms *
Drain current
ID
10
10 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
Drain−source voltage
VDSS
max
10
VDS
100
(V)
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TPCP8201
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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