TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCP8301 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement model: Vth = −0.5 to −1.2V (VDS = −10 V, ID = −200 μA) 2.4±0.1 • • • • • • 0.475 1 4 B 0.65 2.9±0.1 2.8±0.1 5 8 0.05 M B A 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic S Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V V VGSS ±12 DC (Note 1) ID −5 Pulse (Note 1) IDP −20 PD (1) 1.48 PD (2) 1.23 Gate-source voltage Drain current Single-device operation Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2a) dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2b) dual operation (Note 3b) PD (2) 0.36 EAS 6.5 mJ Avalanche current IAR −5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.12 mJ Single-pulse avalanche energy (Note 4) 1.12 +0.13 -0.12 1. Source1 2. Gate1 3. Source2 4. Gate2 5. Drain2 6. Drain2 7. Drain1 8. Drain1 JEDEC ⎯ JEITA ⎯ TOSHIBA Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 0.28 +0.1 -0.11 +0.13 W 0.58 S 0.17±0.02 1.12 -0.12 A PD (1) 0.025 0.28 +0.1 -0.11 2-3V1G Weight: 0.017 g (typ.) Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration 8 7 Marking (Note 6) 6 8 5 7 6 5 8301 ※ 1 2 3 4 1 2 3 4 Lot No. 1 2006-11-17 TPCP8301 Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 84.5 Rth (ch-a) (2) 101.6 Rth (ch-a) (1) 215.5 Rth (ch-a) (2) 347.2 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is applied to both devices evenly.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −5 A Note 5: Repetitive rating: Pulse width limited by Max. Channel temperature. Note 6: ● on the lower left of the marking indicates Pin 1. * Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCP8301 Electrical Characteristics (Ta = 25°C) Gate leakage current Symbol IGSS Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance ⎯ ⎯ ±10 μA μA ⎯ ⎯ −10 −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = -12 V −8 ⎯ ⎯ Vth VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 RDS (ON) VGS = −2.0 V, ID = −1.3 A ⎯ 55 130 RDS (ON) VGS = −2.5 V, ID = −2.5A ⎯ 38 60 RDS (ON) VGS = −4.5 V, ID = −2.5A ⎯ 25 31 Reverse transfer capacitance Crss Output capacitance Coss tr VDS = −10 V, ID = 2.5A VDS = −10 V, VGS = 0 V, f = 1 MHz VGS ID = -2.5A 0V 4.7 Ω tf toff Qg Gate-source charge1 Qgs1 Gate-drain (“Miller”) charge Qgd 7 14 ⎯ ⎯ 1500 ⎯ ⎯ 240 ⎯ ⎯ 220 ⎯ ⎯ 10 ⎯ ⎯ 20 ⎯ V V mΩ S pF OUT -5V ton Switching time Total gate charge (gate-source plus gate-drain) Unit VDS = −20 V, VGS = 0 V Ciss Turn-off time Max ID = −10 mA, VGS = 0 V |Yfs| Fall time Typ. IDSS Input capacitance Turn-on time VGS = ±10 V, VDS = 0 V Min V (BR) DSS Forward transfer admittance Rise time Test Condition RL = 4Ω Characteristic VDD ∼ − -10 V Duty < 1%, t = 10 μs = w VDD ∼ − −16 V, VGS = −5 V, ID = −5 A ns ⎯ 50 ⎯ ⎯ 170 ⎯ ⎯ 20 ⎯ ⎯ 3.6 ⎯ ⎯ 5.5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −20 A ⎯ ⎯ 1.2 V VDSF IDR = −5 A, VGS = 0 V 3 2006-11-17 TPCP8301 ID – VDS −10 −10 −2.5 −3 (A) −4 −2.0 ID −6 −10 −6 Drain current Drain current ID (A) −8 −8 ID – VDS −20 Common source Ta = 25°C Pulse test −1.8 −4 −1.6 −2 −8 −16 −4 −3 −6 −2.8 Common source Ta = 25°C Pulse test −2.6 −2.4 −12 −2.0 −8 −1.8 −4 −1.6 VGS = −1.4 V 0 0 −0.2 −0.4 −0.6 Drain−source voltage −0.8 VDS VGS = −1.4 V 0 0 −1.0 −0.4 (V) −0.8 VDS (V) Drain−source voltage ID Drain current −8 −6 100 −4 25 −2 −0.4 −0.8 −1.2 −1.6 Gate−source voltage −0.5 −0.4 −0.3 −0.2 ID = −5 A −0.1 −2.5 −2.0 VGS 0 0 −2.4 −2 (V) −4 100 25 Common source VDS = 10 V Pulse test −1 Drain−source ON resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance Ta = −55°C VGS −10 (V) Common source Ta = 25°C Pulse test 100 VGS = −2 V −2.5 −4.5 10 −0.1 −10 ID −8 RDS (ON) – ID 1000 Drain current −6 Gate−source voltage |Yfs| – ID 1 −0.1 (V) −1.3 100 10 VDS −2.0 Common source Ta = 25°C Pulse test Ta = −55°C 0 0 −1.6 VDS – VGS −0.6 Common source VDS = −10 V Pulse test (A) −10 −1.2 Drain-source voltage ID – VGS −12 −2.2 (A) −1 Drain current 4 −10 ID (A) 2006-11-17 TPCP8301 RDS (ON) – Ta IDR – VDS −100 (A) ID = −5 A ID = −2.5 A IDR VGS = −2 V 40 20 −1.3 VGS = −2.5 V VGS = −4.5 V 0 −80 −40 0 40 80 Ambient temperature 120 Ta −3 −10 −1 VGS = 0 V −1 Common source Ta = 25°C Pulse test −0.1 0 160 0.2 0.4 Vth (V) Gate threshold voltage (pF) C Capacitance Coss Crss 10 −0.1 −1 −10 VDS (2) 1.0 0.5 −0.2 Common source VDS = −10 V ID = −200 μA Pulse test −40 0 40 −20 VDS (V) (3) 0 40 80 120 Ambient temperature Ta 160 (°C) Dynamic input/output characteristics (4) 0 120 −0.4 (V) Drain−source voltage (1) 80 −0.6 0 −80 −100 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (W) PD Drain power dissipation 1.5 (V) −0.8 PD – Ta 2.0 VDS 1.2 −1.0 Ambient temperature Drain−source voltage 1.0 Vth – Ta Ciss 100 0.8 −1.2 Common source Ta = 25°C VGS = 0 V f = 1 MHz 1000 0.6 Drain−source voltage (°C) Capacitance – VDS 10000 1 160 Ta −16 (°C) VDS −8 VGS −6 −12 −8 −8 −4 VDD = −16 V −4 −8 −4 −4 −2 10 Total gate charge 5 −10 VDD = −16 V 0 0 200 Common source ID = −5 A Ta = 25°C Pulse test 0 30 20 Qg (V) 60 −5 VGS 80 Gate−source voltage Common source Pulse test Drain reverse current Drain-source ON resistance RDS (ON) (mΩ) 100 (nC) 2006-11-17 TPCP8301 rth − tw 1000 rth (°C/W) (4) (3) (2) Transient thermal impedance 100 (1) 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 単発パルス t = 10 s 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area −100 Single-device value at dual operation (Note 3b) Drain current ID (A) ID max (Pulse) * −10 1 ms * 10 ms * −1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain−source voltage VDSS max −10 VDS −100 (V) 6 2006-11-17 TPCP8301 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-17