TOSHIBA 2SC5748

2SC5748
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5748
Horizontal Deflection Output for HDTV&Digital TV.
·
High voltage: VCBO = 2000 V
·
Low saturation voltage: VCE (sat) = 3 V (max)
·
High speed: tf = 0.15 µs (typ.)
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
2000
V
Collector-emitter voltage
VCEO
900
V
Emitter-base voltage
VEBO
5
V
DC
IC
16
Pulse
ICP
32
Base current
IB
8
A
Collector power dissipation
PC
210
W
Junction temperature
Tj
150
°C
JEDEC
―
Tstg
-55~150
°C
JEITA
―
Collector current
Storage temperature range
A
TOSHIBA
Weight: 9.75 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Symbol
ICBO
2-21F2A
Test Condition
VCB = 2000 V, IE = 0
Min
Typ.
Max
Unit
¾
¾
1
mA
IEBO
VEB = 5 V, IC = 0
¾
¾
100
mA
V(BR) CEO
IC = 10 mA, IB = 0
900
¾
¾
V
hFE (1)
VCE = 5 V, IC = 2 A
20
¾
55
hFE (2)
VCE = 5 V, IC = 8 A
7
¾
12.5
hFE (3)
VCE = 5 V, IC = 12 A
4.8
¾
7.5
Collector-emitter saturation voltage
VCE (sat)
IC = 12 A, IB = 3 A
¾
¾
3
V
Base-emitter saturation voltage
VBE (sat)
IC = 12 A, IB = 3 A
¾
¾
1.3
V
VCE = 10 V, IC = 0.1 A
¾
2
¾
MHz
Cob
VCB = 10 V, IE = 0, f = 1 MHz
¾
310
¾
pF
tstg
ICP = 8 A, IB1 (end) = 1.2 A,
fH = 32 kHz
¾
4.0
5.0
¾
0.15
0.35
Transition frequency
fT
Collector output capacitance
Switching time
Storage time
Fall time
tf
1
ms
2001-11-27
2SC5748
IC – VCE
20
3.5
4
3
2.5
2
Collector current
IC
(A)
16
1.2
0.8 1.0
12
1.4
1.6 1.8
0.6
0.4
8
IB = 0.2
4
Common emitter
Tc = 25°C
0
0
2
4
6
10
8
Collector–emtter voltage
VCE
(V)
3
10
hFE – IC
300
100
DC current gain
hFE
TC = 100°C
25
30
-25
10
3
Common emitter
VCE = 5 V
1
0.5
0.01
0.03
0.3
0.1
1
Collector current
IC
30 50
(A)
IC – VBE
20
Collector current
IC
(A)
Common emitter
VCE = 5 V
16
12
8
4
0
0
TC = 100°C
0.2
0.4
25
0.6
Base–emtter voltage
-25
0.8
VBE
1
1.2
(V)
2
2001-11-27
2SC5748
VCE – IB
VCE (sat) – IC
10
Common emitter
Tc = -25°C
Collector emitter saturation voltage
VCE (sat) (V)
Collector emitter voltage VCE
(V)
10
8
6
4
7
8
9
10
IC = 12 A
11
2
0
0
5
3
1.6
2.4
Base current
IB
3.2
10
1
0.5
8
IC/IB = 4
0.1
4
1
Collector emitter saturation voltage
VCE (sat) (V)
(V)
Collector emitter voltage VCE
Common emitter
Tc = 25°C
8
6
4
0
0
9
10
IC = 12 A
11
5
1.6
2.4
Base current
IB
3.2
0.5
10
0.3
1
Collector emitter saturation voltage
VCE (sat) (V)
(V)
Collector emitter voltage VCE
4
0
0
0.8
IC/IB = 4
5
10
IC
30 50
100
(A)
VCE (sat) – IC
10
6
10
3
Collector current
(A)
8
9
6
8
0.1
4
Common emitter
Tc = 100°C
8
(A)
1
VCE – IB
7
100
Common emitter
Tc = 25°C
10
2
IC
30 50
3
0.05
0.2
0.8
10
VCE (sat) – IC
10
8
5
Collector current
VCE – IB
7
3
(A)
10
2
6
0.3
0.05
0.2
0.8
Common emitter
Tc = -25°C
IC = 12 A
11
1.6
2.4
Base current
IB
3.2
5
3
1
(A)
10
0.5
8
IC/IB = 4
0.1
1
3
5
Collector current
3
6
0.3
0.05
0.2
4
Common emitter
Tc = 100°C
10
IC
30 50
100
(A)
2001-11-27
2SC5748
Transient thermal impedance (junction-case)
rth (j-c) (°C/W)
rth (j-c) – tw
10
1
0.1
0.01
Tc = 25°C (infinite heat sink)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
0.001
10 m
100 m
1m
10 m
100 m
Pulse width
1
tw
10
100
PC – Tc
Safe Operating Area
100
250
PC
10 ms*
1 ms*
Collector current
IC
(A)
10 ms*
Collector power dissipation
IC max
(continuous)
100 ms*
1
Infinite heat sink
(W)
100 ms*
IC max (pulsed)
10
DC operation
Tc = 25°C
200
150
100
50
0
0
0.1
25
50
75
100
Case temperature Tc
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.01
1
1000
(s)
10
125
150
175
(°C)
VCEO
max
100
Collector-emitter voltage VCE
1000
(V)
4
2001-11-27
2SC5748
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2001-11-27
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