2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV · High voltage: VCBO = 1700 V · High speed: tf (2) = 0.2 µs (typ.) · Collector metal (fin) is fully covered with mold resin. Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 1700 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 8 Pulse ICP 16 Base current IB 4 A Collector power dissipation PC 55 W Junction temperature Tj 150 °C Tstg -55~150 °C Collector current Storage temperature range Equivalent Circuit A JEDEC ― JEITA ― TOSHIBA 2. Collector 2-16E3A Weight: 5.5 g (typ.) 1. Base 40 W (typ.) 3. Emitter Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Symbol ICBO Test Condition Min Typ. Max Unit VCB = 1700 V, IE = 0 ¾ ¾ 1 mA VEB = 5 V, IC = 0 83 ¾ 250 mA V (BR) EBO IE = 400 mA, IB = 0 5 ¾ ¾ V hFE (1) VCE = 5 V, IC = 1 A 6 ¾ 20 hFE (2) VCE = 5 V, IC = 6 A 3.8 ¾ 9 Collector-emitter saturation voltage VCE (sat) IC = 6 A, IB = 1.5 A ¾ ¾ 5 V Base-emitter saturation voltage VBE (sat) IC = 6 A, IB = 1.5 A ¾ 0.9 1.2 V Forward voltage (damper diode) VF IF = 6 A ¾ 1.3 1.8 V Transition frequency fT VCE = 10 V, IC = 0.1 A ¾ 2 ¾ MHz VCB = 10 V, IE = 0, f = 1 MHz ¾ 180 ¾ pF ICP = 6 A, IB1 (end) = 1.2 A, fH = 15.75 kHz ¾ 6 8 ¾ 0.3 0.6 3.5 5 0.2 0.35 Emitter cut-off current IEBO Emitter-base breakdown voltage DC current gain Collector output capacitance Storage time Switching time Fall time Storage time Fall time Cob tstg (1) tf (1) tstg (2) tf (2) ICP = 5.5 A, IB1 (end) = 1.1 A, fH = 31.5 kHz 1 ¾ ¾ ms 2001-11-27 2SC5716 IC – VCE 10 2.5 2 1.8 1.6 1.4 1.2 1.0 Collector current IC (A) 8 0.8 0.6 6 0.4 4 IB = 0.2 2 Common emitter Tc = 25°C 0 0 2 4 6 8 Collector-emitter voltage VCE 10 (V) hFE – IC Common emitter VCE = 5 V DC current gain hFE 300 100 30 Tc = 100°C 10 25 -25 3 1 0.01 0.03 0.1 0.3 1 Collector current 3 IC 10 30 (A) IF – VF IC – VBE 10 10 Collector current 6 4 2 Tc = 100°C 0 0 0.2 Open base (A) Instantaneous forward current IF 8 IC (A) Common emitter VCE = 5 V 0.4 -25 25 0.6 0.8 Base-emitter voltage VBE 1 8 6 4 2 0 0 1.2 0.4 0.8 1.2 1.6 Instantaneous forward voltage VF (V) 2 2 (V) 2001-11-27 2SC5716 VCE (sat) – IC VCE – IB 10 Common emitter Tc = -25°C Collector emitter saturation voltage VCE (sat) (V) Collector emitter voltage VCE (V) 10 8 6 4 2 3 0 0 4 IC = 6 A 5 5 3 0.8 1.2 Base current 1.6 IB 2 8 6 1 4 0.5 0.3 IC/IB = 2 0.1 0.05 0.2 0.4 Common emitter Tc = -25°C 2.4 1 VCE – IB Collector emitter saturation voltage VCE (sat) (V) (V) Collector emitter voltage VCE Common emitter Tc = 25°C 8 6 4 2 0 0 IC = 6 A 5 5 0.8 1.2 Base current 1.6 IB 2 6 0.5 1 IC = 6 A Base current 1.6 IB 3 5 10 Collector current Collector emitter saturation voltage VCE (sat) (V) (V) Collector emitter voltage VCE 2 1.2 50 100 0.1 IC 30 (A) VCE (sat) – IC 4 0.8 100 IC/IB = 2 10 6 0.4 50 4 0.3 (A) 8 0 0 100 8 2.4 Common emitter Tc = 100°C 5 50 1 VCE – IB 4 30 (A) Common emitter Tc = 25°C 10 3 IC 3 0.05 0.2 0.4 10 VCE (sat) – IC 10 4 5 (A) 10 3 3 Collector current 2 5 3 8 1 6 0.3 IC/IB = 2 0.1 1 3 5 Collector current (A) 3 4 0.5 0.05 0.2 2.4 Common emitter Tc = 100°C 10 IC 30 (A) 2001-11-27 2SC5716 Transient thermal impedance (junction-case) rth (j-c) (°C/W) rth (j-c) – tw 10 1 0.1 0.01 Tc = 25°C (infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10 m 100 m 1m 10 m 100 m Pulse width 1 tw 10 100 (s) PC – Tc Safe Operating Area 100 (W) 100 100 ms* 1 ms* 10 ms* Cllector power dissipation PC IC max (pulsed) IC max (continuous) Collector current IC (A) 10 10 ms* 1 DC operation Tc = 25°C 100 ms* Infinite heat sink 80 60 40 20 0 0 0.1 25 50 75 100 Case temperature Tc *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 1000 10 Collector-emitter voltage 125 150 175 (°C) VCEO max 100 VCE 1000 (V) 4 2001-11-27 2SC5716 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-11-27