New Product Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY 30 FEATURES rDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 VDS (V) Qg (Typ) • TrenchFET® Power MOSFET 9.2 nC APPLICATIONS RoHS COMPLIANT • Notebook Load Switch • Low Current DC/DC TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 AM S XXX Lot Traceability and Date Code G (3) Part # Code 2.85 mm (4) S Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS 1.7b,c 4.1 2.6 PD 2b,c 1.25b,c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V 7.5b,c 5.9b,c 30 2.7 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 8a 8a A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot t≤5s Steady State Symbol RthJA RthJF Typical 45 25 Maximum 62.5 30 Unit °C/W Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 69254 S-72070-Rev. A, 08-Oct-07 www.vishay.com 1 New Product Si3410DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 µA 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C - 6.2 1 3 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 5 A 20 0.0195 VGS = 4.5 V, ID = 4 A 0.019 0.023 VDS = 10 V, ID = 5 A 24 1295 VDS = 15 V, VGS = 0 V, f = 1 MHz 170 pF 72 VDS = 15 V, VGS = 10 V, ID = 5 A 21.8 33 9.2 14 VDS = 15 V, VGS = 4.5 V, ID = 5 A 3.8 f = 1 MHz 2.4 nC 2.5 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ω 21 40 14 25 40 tf 9 18 td(on) 10 20 8 16 tr Ω S 20 td(off) µA A 0.016 td(on) td(off) V 33 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf 21 35 8 16 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.7 30 IS = 1.7 A, VGS = 0 V IF = 3 A, di/dt = 100 A/µs, TJ = 25 °C A 0.77 1.2 V 21 40 ns 15 30 nC 13 8 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 1.5 VGS = 10 V thru 4 V 1.2 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 0.9 0.6 TC = 25 °C 0.3 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 5 1600 1280 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) Ciss 0.026 VGS = 4.5 V 0.022 0.018 0.014 960 640 320 VGS = 10 V 0.010 Coss Crss 0 0 6 12 18 24 30 0 12 18 24 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.7 ID = 5 A ID = 5 A 8 1.5 rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 VDS = 10 V VDS = 15 V 6 VDS = 20 V 4 2 VGS = 10 V 1.3 VGS = 4.5 V 1.1 0.9 0 0 5 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 10 15 20 25 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product Si3410DV Vishay Siliconix 100 0.10 10 0.08 1 r DS(on) - On-Resistance (Ω) I S - Source Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 °C 0.1 TJ = 25 °C 0.06 0.04 TA = 125 °C 0.02 0.01 TA = 25 °C 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Temperature 0.6 60 ID = 250 µA 0 48 ID = 5 mA Power (W) VGS(th) Variance (V) 0.3 - 0.3 - 0.6 - 0.9 - 50 36 24 12 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by r DS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 I D - Drain Current (A) 10 Package Limited 7 5 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.5 4 1.2 3 0.9 Power Power 5 2 0.6 1 0.3 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69254 S-72070-Rev. A, 08-Oct-07 www.vishay.com 5 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.00 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.10 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69254. www.vishay.com 6 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1