MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications · High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 3300 V Gate-emitter voltage VGES ±20 V IC 1200 A 1 ms ICP 2400 A 10 ms (half sine) IFSM 10 kA Tj -40~125 °C Storage temperature range Tstg -40~125 °C Isolation voltage VIsol 6000 (AC 1 min) V DC Collector current Peak 1 cycle surge current Operating junction temperature Terminal: M4/M8 Screw torque Mounting 2/7 ¾ Nm 4 Caution: MG1200FXF1US51 has no short-circuit capability. 1 2001-09-05 MG1200FXF1US51 Electrical Characteristics (Tvj = 125°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 V ¾ ¾ ±50 nA Collector cut-off current ICES VCE = 3300 V, VGE = 0 V ¾ 75 100 mA ¾ 4.4 ¾ V Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 1.2 A Collector-emitter saturation voltage VCE (sat) IC = 1200 A, VGE = 15 V ¾ 4.6 5.3 V VCE = 10 V, VGE = 0 V, f = 100 kHz ¾ 230 ¾ nF VCC = 1800 V, IC = 1200 A, ¾ 2.1 ¾ ms ¾ 0.3 ¾ ms ¾ 4.0 ¾ ms Input capacitance Cies Rise time Turn-on time tr ton Switching time Fall time tf VGG = ±15 V, CGE = 0.1 mF, RG (on)/(off) = 3.9/3.3 W (dic/dt (on) ~ - 4900 A/ms) toff (Inductive load, Ls ~ - 160 nH) ¾ 1.8 ¾ ms Forward voltage of diode VF IF = 1200 A, VGE = 0 V ¾ 3.5 4.0 V Reverse recovery charge Qrr IF = 1200 A, VGG = -15 V, ¾ 1000 ¾ mC ¾ 1500 ¾ A ¾ 2.2 2.8 J ¾ 2.0 3.0 J ¾ 1.0 1.5 J Min Typ. Max Unit Transistor (IGBT) stage ¾ ¾ 8.0 Diode stage ¾ ¾ 16.0 ¾ 6.0 ¾ Turn-off time Peak reverse recovery current Irr diF/dt ~ - -4900 A/ms, VCC = 1800 V VCC = 1800 V, IC = 1200 A, turn-on loss Eon VGG = ±15 V, CGE = 0.1 mF, RG (on)/(off) = 3.9/3.3 W Switching dissipation turn-off loss Eoff (dic/dt (on) ~ - 4900 A/ms) (Inductive load, Ls ~ - 160 nH) IF = 1200 A, VGG = -15 V, Diode reverse recovery loss Edsw diF/dt ~ - -4900 A/ms, VCC = 1800 V Thermal Resistance (Tc = 25°C) Characteristics Thermal Resistance Symbol Rth (j-c) Rth (c-f) Test Condition Per module (Note 1) °C/kW Note 1: Toshiba silicone’s YG6260 heat radiation grease is recommended for use with semiconductor devices. Apply a thin, even (100-to-200-mm) coating of grease. 2 2001-09-05 MG1200FXF1US51 IC – VCE (typ.) IF – VF 2500 Tvj = 25°C (A) 2000 2000 IF 125°C IC (A) Tvj = 25°C Forward current 1500 Collector current (typ.) 2500 1000 500 125°C 1500 1000 500 VGE = +15 V 0 0 2 4 6 Collector-emitter voltage VCE Eon – IC 0 0 8 (V) (typ.) VF 6 (V) Eoff – IC (typ.) 2.5 (J) (J) 2.0 Turn-off loss per a pulse Eoff 2.0 Turn-on loss per a pulse Eon 4 Forward voltage 2.5 1.5 1.0 VCC = 1800 V RG = 3.9 W CGE = 0.1 mF Ls = 160 nH VGE = +/-15 V Tvj = 125°C 0.5 0 0 500 1000 Collector current IC 0.5 500 (typ.) (°C/kw) (J) Transient thermal resistance Rth(j-c) Edsw 0.6 0.4 VCC = 1800 V di/dt = 4900 A/ms Ls = 160 nH VGE = -15 V Tvj = 125°C 0.2 1000 IF 1000 IC 1500 (A) Rth – t 0.8 Forward current VCC = 1800 V RG = 3.3 W CGE = 0.1 mF Ls = 160 nH VGE = +/-15 V Tvj = 125°C Collector current 1.0 500 1.0 (A) Edsw – IF 0 0 1.5 0 0 1500 1.2 Reverse recovery energy 2 Diode-stage 0.01 IGBT-stage 0.001 0.0001 0.00003 0.001 1500 (A) (max) 0.1 0.01 0.1 1 10 Time t (s) 3 2001-09-05 MG1200FXF1US51 Package Dimensions: 2-193A1A Unit: mm 4 2001-09-05 MG1200FXF1US51 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-09-05