GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode • Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V DC IC 60 1 ms ICP 120 DC IECF 60 1 ms IECPF 120 PC 200 Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque A A JEDEC ― W JEITA ― Tj 150 °C TOSHIBA Tstg −55~150 °C 2-21F2C Weight: 9.75 g (typ.) 0.8 N･m Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT60J322 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 6.0 V VCE (sat) (1) IC = 10 A, VGE = 15 V 0.95 1.45 VCE (sat) (2) IC = 60 A, VGE = 15 V 1.25 1.65 VCE = 10 V, VGE = 0, f = 1 MHz 13500 0.25 0.35 1.00 1.50 1.50 1.2 1.6 Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage tr ton tf toff 15 V 18 Ω 0 −15 V 5Ω Gate-emitter cut-off voltage 300 V VF IF = 60 A, VGE = 0 trr IF = 60 A, VGE = 0, di/dt = −100 A/µs V pF µs V 0.6 1.0 µs Thermal resistance (IGBT) Rth (j-c) 0.625 °C/W Thermal resistance (Diode) Rth (j-c) 0.96 °C/W Reverse recovery time 2 2002-01-18 GT60J322 IC – VCE VCE – VGE 100 10 15 Common emitter VGE = 8 V 20 80 10 Collector-emitter voltage VCE Collector current IC (A) Tc = 25°C 60 40 20 0 0 0.4 0.8 1.2 1.6 Collector-emitter voltage VCE Tc = −40°C (V) Common emitter 8 6 IC = 10 A 4 2 60 30 0 0 2.0 120 4 (V) 8 12 Gate-emitter voltage 16 VGE 10 Common emitter Collector-emitter voltage VCE 8 6 60 4 30 120 2 Tc = 125°C (V) (V) Collector-emitter voltage VCE Common emitter Tc = 25°C 8 6 120 4 60 30 2 IC = 10 A IC = 10 A 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 0 20 4 8 IC – VGE 20 (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V (A) 16 VGE 3 Common emitter VGE = 15 V Common emitter IC 12 Gate-emitter voltage (V) 100 Collector current (V) VCE – VGE VCE – VGE 10 80 Tc = 125°C 60 40 25 20 0 0 20 −40 4 8 12 Gate-emitter voltage 16 VGE 2 120 60 1 30 IC = 10 A 0 −40 20 (V) 0 40 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT60J322 VCE, VGE – QG C – VCE 50000 30000 Common emitter Cies Tc = 25°C (pF) 10000 5000 12 C 16 RL = 5 Ω 3000 8 Capacitance Collector-emitter voltage VCE (×25 V) Gate-emitter voltage VGE (V) 20 1000 500 300 4 100 0 0 100 200 300 Gate charge QG 400 50 1 500 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 3 10 Switching time – RG 100 300 1000 3000 (V) Safe operating area IC max (pulsed) 100 (µs) 30 300 3 (A) 10 ms* 30 1 ms* 100 µs* DC operation IC tf 10 µs* IC max (continuous) 50 toff 0.5 Common emitter VCC = 300 V VGG = ±15 V IC = 60 A Tc = 25°C 0.3 ton tr 0.1 3 Collector current Switching time Cres Collector-emitter voltage VCE (nC) 5 1 Coes 5 10 30 50 100 10 5 3 1 *: Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 300 0.5 Gate resistance RG (Ω) 30 100 Collector-emitter voltage VCE 300 1000 (V) Switching time – IC 3 Switching time (µs) toff 1 tf 0.5 ton 0.3 tr 0.1 0.05 0 Common emitter VCC = 300 V RG = 18 Ω VGG = ±15 V Tc = 25°C 20 40 Collector current 60 IC 80 (A) 4 2002-01-18 GT60J322 Reverse bias SOA 10 300 rth (t) – tw 2 Transient thermal impedance rth (t) (°C/W) 50 30 10 1 1 Tj < = 125°C VGE = ±15 V RG = 18 Ω 3 10 30 100 3000 Collector-emitter voltage VCE Diode 0 IGBT 10−1 10−2 10−3 10−4 1000 10−3 10−2 (V) Pulse width IF − VF Forward current 60 Tc = 125°C 40 25 −40 20 0.4 0.8 1.2 Forward voltage VF 1.6 (s) trr Irr 30 300 10 10 Common collector di/dt = −100 A/µs VGE = 0 Tc = 25°C 5 10 20 30 1000 50 30 Reverse voltage 50 VR 100 Common collector (A) Reverse recovery time 100 500 0 300 500 (V) Peak reverse recovery current trr 300 30 (A) 100 Irr (ns) 500 10 30 60 50 40 IF 50 Irr, trr – di/dt 1000 (pF) 2 500 Forward current Tc = 25°C Junction capacitance Cj 10 50 (V) f = 1 MHz 5 1 1000 Cj − VR 3 10 100 3 0 2.0 3000 10 0 tw 0 (A) Peak reverse recovery current Irr 80 IF (A) Common collector VGE = 0 0 10 Irr trr, − IF 100 0 10−1 (ns) 3 10 trr 5 10 1 Reverse recovery time Collector current IC (A) Tc = 25°C 100 IF = 60 A 80 Tc = 25°C Irr 60 trr 40 20 0 0 40 80 120 di/dt 5 160 200 240 (A/µs) 2002-01-18 GT60J322 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-01-18