GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1500 V Gate-emitter voltage VGES ±25 V DC IC 40 1 ms ICP 80 DC IECF 30 1 ms IECPF 80 Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Tstg −55~150 °C Collector current Emitter-collector forward current Storage temperature range A A JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT40T301 Electrical Characteristics (Ta = 25°C) Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 1500 V, VGE = 0 1.0 mA VGE (OFF) IC = 40 mA, VCE = 5 V 4.0 7.0 V VCE (sat) IC = 40 A, VGE = 15 V 3.7 5.0 V VCE = 10 V, VGE = 0, f = 1 MHz 2900 pF 0.40 15 Ω Characteristics 0.45 0.23 0.40 600 V 0.6 IECF = 30 A, VGE = 0 1.9 2.5 V IECF = 30 A, VGE = 0, di/dt = −20 A/µs 0.7 3.0 µs IGBT 0.625 Diode 1.25 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time Turn-on time Fall time Turn-off time Emitter-collector forward voltage Reverse recovery time Thermal resistance tr ton tf toff VECF trr Rth (j-c) 51 Ω 15 V 0 −15 V 2 µs °C/W 2002-01-18 GT40T301 IC – VCE VCE – VGE 100 10 20 15 Common emitter (V) 25 12 Collector-emitter voltage VCE Collector current IC (A) 80 60 10 40 20 VGE = 8 V 0 0 2 4 6 8 Collector-emitter voltage VCE Tc = −40°C 8 60 6 20 80 4 IC = 10 A 2 0 0 10 40 (V) 4 8 12 16 Gate-emitter voltage VCE – VGE VGE 20 (V) VCE – VGE 10 10 (V) Tc = 25°C 8 6 Collector-emitter voltage VCE Collector-emitter voltage VCE (V) Common emitter 80 60 40 4 20 IC = 10 A 2 8 80 6 60 40 4 20 2 IC = 10 A Common emitter Tc = 125°C 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 0 20 (V) 4 8 Gate-emitter voltage IC – VGE (V) Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V (A) IC VGE 20 10 Common emitter Collector current 16 VCE (sat) – Tc 100 80 12 60 40 25 20 Tc = 125°C VGE = 15 V 8 6 80 60 40 4 20 2 IC = 10 A −40 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 −80 20 (V) −40 0 40 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT40T301 VCE, VGE – QG Switching time – RG Common Common emitter (µs) emitter RL = 7.5 Ω Tc = 25°C 30 Switching time Collector-emitter voltage VCE (×10 V) Gate-emitter voltage VGE (V) 10 20 200 10 300 5 3 VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C toff ton tr 1 tf 0.5 0.3 VCE = 100 V 0 0 40 80 120 Gate charge 160 200 QG (nC) 240 0.1 1 280 3 5 10 Gate resistance RG Switching time – IC Switching time 1 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C (Ω) 5000 3000 (pF) (µs) 3 300 500 1000 C – VCE toff C 5 100 10000 ton tr 0.5 0.3 Capacitance 10 30 50 tf 0.1 0.05 Cies 1000 500 300 Coes 100 50 30 10 0.03 5 3 0.01 0 1 1 Cres Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 10 20 30 Collector current IC 40 50 (A) 3 100 (V) Reverse bias SOA IC max (pulsed)* 1 ms* 100 IC IC max (continuous) (A) 10 µs* 100 µs* 10 Collector current (A) IC Collector current 50 10 ms* 50 5 30 200 300 30 10 Collector-emitter voltage VCE Safe operating area 100 5 DC operation 3 *: Single nonrepetitive pulse Tc = 25°C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30 100 300 Collector-emitter voltage VCE 1000 30 10 Tj < = 125°C VGE = ±15 V RG = 51 Ω 3 10 3000 (V) 30 100 300 Collector-emitter voltage VCE 4 1000 3000 (V) 2002-01-18 GT40T301 10 Rth (t) – tw 1 IECF – VECF 100 10 Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (°C/W) Common collector 0 Diode IGBT 10−1 10−2 80 Tc = 40°C 60 25 40 125 20 Tc = 25°C 10−3 10−5 10−4 10−3 10−2 10−1 Pulse width tw 10 0 10 1 10 0 0 2 1 (s) 2 3 Emitter-collector forward voltage Irr, trr – IECF 1.0 0.5 0 12 Irr 8 trr 4 0 0 20 40 60 Emitter-collector forward current 80 IECF 0.6 0.4 0.2 0 100 (A) Irr (µs) 0.8 trr Irr Tc = 25°C Peak reverse recovery current 1.0 di/dt = −20 A/µs 16 (V) 100 Common collector (A) Common collector Reverse recovery time 1.5 Peak reverse recovery current (µs) Reverse recovery time trr 2.0 VECF 5 Irr, trr – di/dt 20 (A) 2.5 4 IECF = 30 A 80 Tc = 25°C 60 trr 40 20 0 0 Irr 40 80 120 di/dt 5 160 200 240 (A/µs) 2002-01-18 GT40T301 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-01-18