TLN227(F) TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN227(F) Lead Free Product For Space−Optical−Transmission Unit: mm • High radiant power: Po = 18mW (typ.) at IF = 50mA • Wide half−angle value: = θ1 / 2 ± 21° (typ.) • High−speed response: tr, tf = 30ns (typ.) • Light source for remote control • Designed for transmission of wireless AVsignals purpose. • Designed for high−speed data transmission Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 100 mA Pulse forward current IFP 1000 (Note 1) mA Power dissipation PD 220 mW Reverse voltage VR 4 V Operating temperature Topr −25~85 °C Storage temperature Tstg −30~100 °C Soldering temperature (5s) Tsol 260 °C TOSHIBA 4-6J1 Pin Connection 1 2 1. 2. Anode Cathode (Note 1): Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 100mA ― 1.8 2.2 V Reverse current IR VR = 4V ― ― 60 µA Radiant power PO IF = 50mA 14 18 ― mW Radiant intensity IE IF = 50mA ― 100 ― mW / sr IFP = 100mA, PW = 100ns ― 30 ― ns Rise time, fall time Cut−off frequency tr, tf fc IF = 50mADC + 5mAp−p 10 15 ― MHz Capacitance (Note 2) CT VR = 0, f = 1MHz ― 110 ― pF Peak emission wavelength λP IF = 50mA 830 870 900 nm Spectral line half width ∆λ IF = 50mA ― 50 ― nm Half value angle 1 θ 2 IF = 50mA ― ±5 ― ° (Note 2): Frequency when modulation light power decreases by 3dB from 1 MHz. 1 2004-01-06 TLN227(F) Precautions Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant power falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. 2 2004-01-06 TLN227(F) IF – Ta IF – VF 100 (mA) 85°C 10 75°C IF 80 Forward current Allowable forward current IF (mA) (typ.) 100 120 60 40 -25°C 50°C 0°C 1 25°C 0.1 20 0 0 20 40 60 80 Ambient temperature 100 Ta 120 (typ.) (mA) IFP IF = 80mA IF = 50mA Pulse Forward Current (V) 500 VF 1.8 1.5 IF = 20mA 1.4 IF = 5mA 1.3 1.2 1.1 −50 25 0 25 75 50 Ambient temperature Ta 100 VF (V) (typ.) 50 30 10 Pulse width ≦ 100µs Repetitive 5 3 frequency = 100Hz Ta = 25°C 1 0 125 3 2 1 6 5 4 Pulse forward voltage VFP (V) Relative PO – IFP 1.2 Ta = 25°C 10000 2 100 IFP – PW (typ.) Pulse width = 1ms 1.0 Duty = 10% 5000 Relative radiant power Allowable pulse forward current IFP (mA) 1.8 300 (°C) 20000 3000 f = 100Hz 200 500 1000 500 300 100 1.6 IFP – VFP 1000 1.6 1.4 Forward voltage 1.9 1.7 1.2 (°C) VF – Ta Forward voltage 0.01 1 140 1k 2k 5k 10k 0.8 0.6 0.4 0.2 50 30 3µ 10µ 30µ 100µ Pulse width 300µ PW 1m 3m 0 0 10m 200 4000 600 Pulse forward current IFP (s) 3 800 1000 (mA) 2004-01-06 TLN227(F) Relative PO – Ta Distance Characteristics (typ.) 1000 Relative radiant power 10 (µA) IF = 50mA 100 0.1 −50 −25 0 25 50 75 Ambient temperature Ta 100 TPS703(F) short circuit current ISC 1 125 (°C) Wavelength Characteristic 1.0 (typ.) Pop = 23mW at IFP = 180mA, f = 100kHz, duty = 50% 10 Po = 14mW at IF = 50mA 1 0.1 0.01 IF = 50mA 1 0.1 Distance d 10 (m) Relative radiant power 0.8 0.6 0.4 0.2 0 800 880 840 960 920 Wavelength λ 1000 (nm) Radiation Pattern (typ.) Frequency Characteristic (typ.) 4 Ta = 25°C 2 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° −2 −4 −6 70° 70° −8 80° 80° 90° Response 10° (dB) 0 20° 0 0.2 0.4 0.6 0.8 −10 0.1 90° 1.0 Relative radiant power 0.3 0.5 1 3 Frequency f 4 5 10 30 50 100 (MHz) 2004-01-06 TLN227(F) RESTRICTIONS ON PRODUCT USE 030619EAC • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 5 2004-01-06