TOSHIBA 2SC6026MFV

2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
High voltage and high current
•
Complementary to 2SA2154MFV
•
Lead (Pb) - free
1.2 ± 0.05
: hFE = 120~400
3
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150*
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)
0.13 ± 0.05
Rating
0.5 ± 0.05
Symbol
Storage temperature range
1
1
2
Maximum Ratings (Ta = 25°C)
Characteristic
0.32 ± 0.05
High hFE
0.4
•
0.80 ± 0.05
0.4
Excellent hFE linearity :
hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
0.8 ± 0.05
: VCEO = 50 V, IC = 150 mA (max)
•
1.2 ± 0.05
0.22 ± 0.05
•
Unit: mm
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4
0.4
Unit: mm
1
2005-06-28
2SC6026MFV
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
⎯
⎯
0.1
µA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
0.1
µA
120
⎯
400
⎯
IC = 100 mA, IB = 10 mA
⎯
0.1
0.25
V
VCE = 10 V, IC = 1 mA
60
⎯
⎯
MHz
VCB = 10 V, IE = 0, f = 1 MHz
⎯
0.95
3
pF
DC current gain
hFE (Note)
Collector-emitter saturation voltage
VCE (sat)
Transition frequency
fT
Collector output capacitance
Cob
VCE = 6 V, IC = 2 mA
Note: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
Type Name
hFE Classification
HY
2
2005-06-28
2SC6026MFV
IC - VCE
hFE - IC
120
1000
1.5
1.0
COLLECTOR CURRENT IC (mA)
Ta = 100°C
0.7
80
0.5
60
0.3
DC CURRENT GAIN hFE
2.0
100
0.2
40
IB = 0.1 mA
20
-25
100
COMMON EMITTER
VCE = 6 V
VCE = 1 V
COMMON EMITTER Ta = 25°C
0
10
0
1
2
3
4
5
6
7
0.1
COLLECTOR-EMITTER VOLTAGE VCE (V)
1
10
1000
VBE(sat) - IC
VCE(sat) - IC
10
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COMMON EMITTER
IC/IB = 10
Ta = 100°C
0.1
25
-25
COMMON EMITTER
IC/ IB = 10
25
-25
1
Ta = 100°C
0.1
0.01
0.1
1
10
100
0.1
1000
COLLECTOR CURRENT IC (mA)
1
10
COLLECTOR POWER DISSIPATION PC (mV)
Ta = 100°C
10
25
-25
1
COMMON EMITTER
VCE = 6V
0.1
0
0.2
0.4
0.6
1000
PC - Ta
IB - VBE
100
100
COLLECTOR CURRENT IC (mA)
1000
BASE CURRENT IB (µA)
100
COLLECTOR CURRENT IC (mA)
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
25
0.8
1
1.2
1.4
BASE-EMITTER VOLTAGE VBE (V)
250
Mounted on FR4 board
(24.5 mm × 24.5 mm × 1.6 mmt)
200
150
100
50
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta (°C)
3
2005-06-28
2SC6026MFV
4
2005-06-28