SEMICONDUCTOR KTA1073T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE CONTROL APPLICATIONS. PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. E B K DIM A B FEATURES ) CHARACTERISTIC J SYMBOL RATING UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Base Current IB -20 mA PC * 0.9 W Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + E F G H I J K L L C Complementary to KTC3207T. MAXIMUM RATINGS (Ta=25 D D G 1 C 3 F Small Collector Output Capacitance : Cob=5.5pF(Typ.) 2 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I A Low Saturation Voltage : VCE(sat)=-0.5V(Max.) G High Voltage : VCBO=-300V, VCEO=-300V MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR TSM Marking ) h FE Rank Lot No. SX Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-300V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -300 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -300 - - V hFE(1) VCE=-10V, IC=-1mA 30 - - hFE(2) (Note) VCE=-10V, IC=-20mA 50 - 200 Collector-Emitter Saturation Voltage VCE(sat) IC=-20mA, IB=-2mA - - -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-20mA, IB=-2mA - - -1.2 V fT VCE=-10V, IC=-20mA 50 55 - MHz - 5.5 6.0 pF DC Current Gain Transition Frequency Cob Collector Output Capacitance Note : hFE(1) Classification 2002. 11. 7 VCB=-20V, IE=0, f=1MHz O:50 150, Y:100~200 Revision No : 1 1/3 KTA1073T I C - VCE (LOW VOLTAGE REGION) A 0m -1 mA -10 mA 2mA - -5 -3 -1mA -80 -0.8mA -60 -0.6mA -40 -0.4mA -0.3mA -20 0 -0.2mA -0.1mA I B =0mA -2 0 -4 -6 -8 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) -100 I C - VCE (LOW CURRENT REGION) -10 -80µA -8 -60µA -50µA -6 -40µA -30µA -4 -20µA -2 0 -10µA IB =0µA 0 -40 COLLECTOR-EMITTER VOLTAGE VCE (V) -80 500 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 50 -5V -1V 30 10 COMMON EMITTER Ta=-25 C -3 -0.3 -1 -3 -10 -30 Ta=25 C 50 Ta=-55 C 30 -0.3 -1 -3 -10 -30 VCE(sat) - I C VBE(sat) - I C -5 COMMON EMITTER I C /I B =10 -0.5 -0.3 Ta=100 C Ta=25 C -0.05 -0.3 -1 -3 5 C Ta=-5 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 11. 7 Ta=100 C 100 COLLECTOR CURRENT I C (mA) -0.1 -200 COMMON EMITTER VCE =-10V COLLECTOR CURRENT I C (mA) -1 -0.03 -0.1 300 10 -0.1 -100 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) DC CURRENT GAIN h FE VCE =-10V 100 -0.1 -160 h FE - I C 300 3 -120 COLLECTOR-EMITTER VOLTAGE VCE (V) hFE - I C 5 -70µA Revision No : 1 -100 -100 COMMON EMITTER I C /I B =10 -3 Ta=-55 C -1 -0.5 Ta=25 C Ta=100 C -0.3 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 2/3 KTA1073T COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.4 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 11. 7 Revision No : 1 3/3