TOSHIBA SSM3K318T

SSM3K318T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K318T
○ Load Switching Applications
○ High-Speed Switching Applications
+0.2
2.8-0.3
4.5 V drive
Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V)
: RDS(ON) = 107 mΩ (max) (@VGS = 10 V)
V
±20
ID
2.5
Pulse
IDP
5.0
Drain power dissipation
A
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
0.4±0.1
3
0~0.1
VGSS
2
0.16±0.05
V
0.15
Unit
60
0.95
Rating
VDSS
DC
Gate-Source voltage
Drain current
Symbol
1
0.7±0.05
Characteristic
Drain-Source voltage
2.9±0.2
Absolute Maximum Ratings (Ta = 25°C)
1.9±0.2
+0.2
1.6-0.1
0.95
•
•
Unit: mm
1: Gate
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu
Pad: 645 mm2)
2: Source
3: Drain
TSM
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = 10mA, VGS = 0 V
60
⎯
⎯
V (BR) DSX
ID = 10mA, VGS = -20 V
35
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±1
μA
VDS = 5 V, ID = 1 mA
1.8
⎯
2.8
V
S
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Vth
⏐Yfs⏐
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Switching time
VDS = 5 V, ID = 2.0 A
(Note 2)
3.7
7.4
⎯
ID = 2.0 A, VGS = 10 V
(Note 2)
⎯
83.5
107
ID = 1.0 A, VGS = 4.5 V
(Note 2)
⎯
101
145
⎯
235
⎯
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDD = 30 V, IDS= 2.5 A
VGS = 10 V
⎯
30.5
⎯
⎯
23.0
⎯
⎯
7.0
⎯
⎯
4.8
⎯
⎯
2.2
⎯
Turn-on time
ton
VDD = 30 V, ID = 1.0 A,
⎯
14.0
⎯
Turn-off time
toff
VGS = 0 to 4.5 V, RG = 10 Ω
⎯
9.5
⎯
⎯
-0.83
-1.2
Drain-Source forward voltage
VDSF
ID = -2.5 A, VGS = 0 V
(Note 2)
mΩ
pF
nC
ns
V
Note2: Pulse test
1
2009-04-09
SSM3K318T
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
OUT
4.5 V
0V
IN
(c) VOUT
RG
0
10 μs
4.5 V
VDD
10%
VDD
VDS (ON)
VDD = 30 V
RG = 10 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
90%
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KDX
1
2
1
2
Usage Consideration
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1 mA for the
SSM3K318T). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2009-04-09
SSM3K318T
ID – VGS
ID – VDS
5
Common Source
Ta = 25 °C
Common Source
VDS = 5 V
1
(A)
4.0 V
4
ID
4.5V
ID
3
3.5V
2
Ta = 100 °C
0.1
Drain current
(A)
10 V
Drain current
10
25 °C
− 25 °C
0.01
0.001
1
VGS = 3.0 V
0
0
0.4
0.2
0.6
0.8
Drain–source voltage
VDS
0.0001
0
1.0
1.0
(V)
2.0
ID =2.0A
Common Source
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
300
200
Ta = 100 °C
100
25 °C
− 25 °C
0
0
10
Gate–source voltage
VGS
200
4.5 V
100
VGS = 10 V
0
20
0
(V)
1
2
ID
3.0
1.0A / 4.5 V
ID = 2.0 A / VGS = 10 V
0
50
Ambient temperature
5
Common Source
VDS = 5 V
ID = 1 mA
Vth (V)
200
0
−50
4
(A)
Vth – Ta
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
3
Drain current
Common Source
100
5.0
(V)
Common Source
Ta = 25°C
RDS (ON) – Ta
300
4.0
VGS
RDS (ON) – ID
RDS (ON) – VGS
300
3.0
Gate–source voltage
100
Ta
2.0
1.0
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2009-04-09
SSM3K318T
IDR – VDS
10
10
IDR
(A)
Common Source
VDS = 5 V
Ta = 25 °C
3
Drain reverse current
(S)
30
Forward transfer admittance
⎪Yfs⎪
|Yfs| – ID
100
1
0.3
0.1
0.03
Common Source
VGS = 0 V
D
1
IDR
G
S
0.1
100 °C
0.01
25 °C
0.01
0.001
0.1
0.01
Drain current
10
1
ID
0.001
0
-0.2
(A)
-0.4
-0.6
Drain–source voltage
C – VDS
-1.0
-0.8
VDS
-1.2
(V)
t – ID
1000
1000
300
Common Source
VDD = 30 V
VGS = 0 to 4.5 V
Ta = 25 °C
RG = 10 Ω
toff
Ciss
tf
(ns)
(pF)
−25 °C
100
Coss
30
Crss
10
3
1
0.1
Switching time
Capacitance
C
t
100
Common
Source
Ta = 25 °C
f = 1 MHz
10
ton
tr
1
10
Drain–source voltage
1
0.01
100
VDS
0.1
Drain current
(V)
1
ID
10
(A)
Dynamic Input Characteristic
Common Source
ID = 2.5A
Ta = 25°C
8
VGS
(V)
10
Gate–source voltage
6
VDD=30V
4
2
0
0
2
4
Total Gate Charge
6
Qg
8
(nC)
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2009-04-09
SSM3K318T
Rth
PD – Ta
– tw
1000
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
1000
b
100
a
10
1
0.001
a: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
b: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
2
Cu Pad : 0.8 mm ×3)
0.01
0.1
1
Pulse width
10
tw
100
800
a
600
400
b
200
0
-40
1000
a: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
b: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 0.8 mm2×3)
-20
0
20
40
60
80
Ambient temperature
(s)
5
100 120 140 160
Ta
(°C)
2009-04-09
SSM3K318T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2009-04-09