TOSHIBA SSM3J114TU

SSM3J114TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J114TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
•
•
Unit: mm
1.5 V drive
Low on-resistance
2.1±0.1
Ron = 526 mΩ (max) (@ VGS = -1.5 V)
Ron = 149 mΩ (max) (@ VGS = -4.0 V)
+0.1
0.3 -0.05
2.0±0.1
Ron = 321 mΩ (max) (@ VGS = -1.8 V)
Ron = 199 mΩ (max) (@ VGS = -2.5 V)
0.65±0.05
1.7±0.1
1
3
2
Drain-Source voltage
Symbol
Rating
Unit
VDS
-20
V
V
VGSS
± 8
DC
ID
-1.8
Pulse
IDP
-3.6
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 ~ 150
°C
Gate-Source voltage
Drain current
Drain power dissipation
0.7±0.05
Characteristics
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
A
1. Gate
2. Source
3. Drain
mW
UFM
JEDEC
―
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2U1A
reliability significantly even if the operating conditions (i.e.
Weight: 6.6 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Note:
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ± 8 V, VDS = 0
⎯
⎯
±1
μA
−0.3
⎯
−1.0
V
1.9
3.9
⎯
S
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Vth
VDS = −3 V, ID = −1 mA
⏐Yfs⏐
VDS = -3 V, ID = -0.6 A
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
Turn-on time
ton
(Note 3)
ID = -0.6 A, VGS = -4.0 V
(Note 3)
⎯
100
149
ID = -0.6 A, VGS = -2.5 V
(Note 3)
⎯
133
199
ID = -0.6 A, VGS = -1.8 V
(Note 3)
⎯
183
321
ID = -0.1 A, VGS = -1.5 V
(Note 3)
VDS = −10 V, VGS = 0
f = 1 MHz
VDD = −10 V, ID = −0.6 A
1
mΩ
⎯
220
526
⎯
331
⎯
pF
⎯
48
⎯
pF
⎯
39
⎯
pF
⎯
19
⎯
ns
2007-11-01
SSM3J114TU
Turn-off time
toff
Characteristics
VGS = 0 ~ −2.5 V, RG = 4.7 Ω
Symbol
Total gate charge
Qg
Gate-Source charge
Qgs
Gate-Drain charge
Qgd
Drain-Source forward voltage
VDSF
Test Condition
VDS = −16 V, IDS = -1.2 A,
VGS = − 4 V
ID = 1.8 A, VGS = 0
(Note 3)
⎯
18
⎯
Min
Typ.
Max
⎯
7.7
⎯
⎯
4.9
⎯
⎯
2.8
⎯
⎯
0.8
1.2
Unit
nC
V
Note 3: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5 V
RG
−2.5V
10 μs
RL
(c) VOUT
VDD
VDD = -10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25 °C
Marking
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
JJ7
1
2
1
2
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a
lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against static electricity. Operators should wear anti-static clothing, and containers
and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3J114TU
ID – VDS
-4
ID – VGS
-10000
-1.8 V
-4 V
Common Source
-2.5 V
VDS = -3 V
(mA)
-3
-100
ID
-1.5 V
-2
Drain current
Drain current
ID
(A)
-1000
VGS = -1.2 V
-1
Ta = 85 °C
-10
25 °C
-1
−25 °C
-0.1
0
Common Source
Ta = 25 °C
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
-0.2
(V)
-0.4
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
300
250
25 °C
150
Ta = 85 °C
100
0
-2
-4
-6
Gate - Source voltage
Common Source
350
300
250
25 °C
200
150
Ta = 85 °C
100
50
0
-8
−25 °C
0
VGS (V)
-2
RDS (ON) – ID
-6
-8
VGS (V)
RDS (ON) – Ta
500
Common Source
400
Common Source
Ta = 25°C
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
-4
Gate - Source voltage
450
350
300
VGS = -1.5 V
250
200
-1.8 V
150
-2.5 V
100
-4.0 V
50
0
-1.6
ID = -0.6 A
−25 °C
0
-1.4
VGS (V)
400
350
50
-1.2
RDS (ON) – VGS
Common Source
200
-1.0
450
ID = -0.1 A
400
-0.8
Gate - Source voltage
RDS (ON) – VGS
450
-0.6
0
-1
-2
Drain current
-3
ID
400
300
-0.6 A / -2.5 V
200
(A)
-0.6 A / -4.0 V
100
0
−50
-4
ID = -0.1 A / VGS = -1.5 V
-0.6 A / -1.8 V
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM3J114TU
Vth (V)
Gate threshold voltage
Common Source
-0.7
-0.5
VDS = -3 V
ID = -1 mA
10
Forward transfer admittance
-0.6
(S)
|Yfs| – ID
30
⎪Yfs⎪
Vth – Ta
-0.8
-0.4
-0.3
-0.2
-0.1
0
−25
0
25
50
75
100
Ambient temperature
Ta
125
150
Common Source
VDS = -3 V
Ta = 25 °C
3
1
0.3
0.1
0.03
0.01
1
Drain current
(°C)
C – VDS
5000
-100
-10
-1000
ID
-10000
(mA)
Dynamic Input Characteristic
-10
Ciss
300
100
50
30
10
-0.1
-8
VGS
Gate-Source voltage
(pF)
500
Capacitance
1000
C
(V)
3000
Common
Coss
Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
Crss
-1
-10
Drain – Source voltage
VDS
-4
-2
0
-100
VDD = -16 V
-6
Common Source
ID = -1.2 A
Ta = 25 °C
0
5
10
Total gate charge
(V)
15
Qg
20
(nC)
t – ID
IDR – VDS
100
Common Source
VGS = 0 V
(A)
toff
-2
IDR
Common Source
VDD = -10 V
VGS = 0 ∼ -2.5 V
Ta = 25 °C
RG = 4.7 Ω
Drain reverse current
Switching time
tf
ton
10
tr
1
0.01
Drain current
1
ID
10
IDR
G
S
-1
-0.5
0
0.1
D
Ta = 25 °C
-1.5
t
(ns)
1000
0
0.2
0.4
0.6
Drain-Source voltage
(A)
4
0.8
VDS
1
1.2
(V)
2007-11-01
SSM3J114TU
PD - Ta
1000
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b
600
a
400
200
0
0
20
40
60
80
100
120
140
160
A mbient temperature Ta(°C)
Rth - tw
1000
c
Transient thermal impedance Rth(°C/W)
Drain power dissipation PD(mW)
800
b
100
a
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
0.01
0.1
1
10
Pulse width tw　(S)
5
100
1000
2007-11-01
SSM3J114TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2007-11-01