TOSHIBA SSM6P47NU

SSM6P47NU
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type(U-MOS VI)
SSM6P47NU
Power Management Switch Applications
1.5V drive
Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V)
RDS(on) = 170 mΩ (max) (@VGS = -1.8 V)
RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)
RDS(on) = 95 mΩ (max) (@VGS = -4.5 V)
2.0±0.1
A
0～0.05
0.13
*BOTTOM VIEW
Unit
Drain-Source voltage
VDSS
−20
V
Gate-Source voltage
VGSS
±8
V
ID
−4.0
DC
Drain current
Pulse
Power dissipation (Note 2)
−8.0
IDP (Note 1)
PD
1
t < 10s
2
A
0.65
0.95
1
2
3
6
5
4
0.3±0.075
0.05 M A
B
0.65±0.075
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 125
°C
Note:
0.65
0.86
Rating
0.86
Symbol
0.9±0.075 0.275±0.1
Common)
0.275±0.1
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2
Characteristics
B
0.75±0.05
•
•
Unit: mm
2.0±0.1
0.65±0.075
0.05 M A
B
1. Source1 4. Source2
UDFN6
2. Gate1
5. Gate2
3. Drain2
6. Drain1
JEDEC
―
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2Y1A
reliability significantly even if the operating conditions (i.e.
Weight: 8.5 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150 °C during use.
Note 2: Total rating
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View)
6
5
4
PP4
Equivalent Circuit(Top View)
6
5
Pin Condition(Top View)
4
Q1
D1
G2
S2
D1
D2
Q2
1
2
S1
3
Polarity marking
1
G1
D2
3
2
Polarity marking (on the top)
*Electrodes : on the bottom
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SSM6P47NU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Drain-Source breakdown voltage
Test Conditions
V (BR) DSS
ID = -1 mA, VGS = 0 V
V (BR) DSX
ID = -1 mA, VGS = 5 V
(Note 4)
Min
Typ.
Max
-20
⎯
⎯
-15
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-1
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
⏐Yfs⏐
VDS = -3 V, ID = -1.0 A
(Note 3)
2.8
5.6
⎯
S
ID = -1.5 A, VGS = -4.5 V
(Note 3)
⎯
80.5
95
ID = -1.0 A, VGS = -2.5 V
(Note 3)
⎯
99.5
125
ID = -0.5 A, VGS = -1.8 V
(Note 3)
⎯
122
170
ID = -0.25 A, VGS = -1.5 V
(Note 3)
⎯
143
242
⎯
290
⎯
⎯
44
⎯
⎯
32
⎯
⎯
4.6
⎯
⎯
0.5
⎯
⎯
1.2
⎯
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs1
Gate-Drain Charge
Qgd
Switching time
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDD = −10 V, ID = −3.5 A
VGS = −4.5 V
Turn-on time
ton
VDD = -10 V, ID = -0.5 A,
⎯
12.0
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
46.2
⎯
⎯
0.9
1.2
VDSF
Drain-Source forward voltage
ID = 4.0 A, VGS = 0 V
(Note 3)
mΩ
pF
nC
ns
V
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test circuit
0
OUT
10 μs
RG
IN
−2.5 V
(b) VIN
VDD = −10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common source
Ta = 25°C
0V
90%
10%
−2.5 V
VDS (ON)
90%
(c) VOUT
VDD
10%
VDD
tr
ton
tf
toff
Notice on Usage
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the
SSM6P47NU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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2011-03-10
SSM6P47NU
(Q1, Q2 Common)
ID – VDS
ID – VGS
-8
-10
-2.5 V
-4.5 V
-1
(A)
(A)
-1.8 V
Drain current
Drain current
ID
ID
-6
VGS = -1.5 V
-4
-2
Common Source
Ta = 25 °C
0
Pulse Test
0
-0.2
-0.4
-0.6
-0.8
Drain–source voltage
VDS
Common Source
VDS = -3 V
Pulse Test
-0.1
-25 °C
Ta = 100 °C
-0.01
25 °C
-0.001
-0.0001
0
-1
-1.0
(V)
Gate–source voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
200
25 °C
Ta = 100 °C
100
-25 °C
-2
-4
-6
Gate–source voltage
300
VGS
-2.5 V
100
VGS = -4.5 V
0
-2.0
-4.0
-6.0
ID
-8.0
(A)
Vth – Ta
-1.0 A / -2.5 V
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
-1.8 V
-1.0
200
-0.5 A / -1.8 V
-0.25 A / -1.5 V
100
ID = -1.5 A / VGS = -4.5 V
Ambient temperature
200
Drain current
Pulse Test
50
-1.5 V
(V)
RDS (ON) – Ta
0
Pulse Test
0
-8
Common Source
0
−50
(V)
Common Source
Ta = 25°C
100
Ta
Common Source
VDS = -3 V
ID = -1 mA
Vth (V)
Drain–source ON-resistance
RDS (ON) (mΩ)
300
ID = -1.5 A
Common Source
Pulse Test
0
VGS
RDS (ON) – ID
RDS (ON) – VGS
300
0
-2.0
-0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2011-03-10
SSM6P47NU
(Q1, Q2 Common)
10
Common Source
VDS = -3 V
Ta = 25°C
Pulse Test
(A)
(S)
⎪Yfs⎪
IDR – VDS
|Yfs| – ID
10
IDR
Drain reverse current
Forward transfer admittance
3
1
0.3
0.1
-0.01
-1
-0.1
Drain current
ID
Common Source
VGS = 0 V
Pulse Test
D
1
IDR
G
-25 °C
S
0.1
Ta =100 °C
0.001
0
-10
0.5
(A)
1.0
Drain–source voltage
C – VDS
1000
25 °C
0.01
VDS
(V)
t – ID
10000
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
toff
300
1000
(ns)
Ciss
tf
100
30
Switching time
Capacitance
t
C
(pF)
1.5
Coss
Common Source
Crss
Ta = 25 °C
f = 1 MHz
VGS = 0 V
100
10 ton
tr
10
-0.1
-1
-10
Drain-source voltage
VDS
1
-0.001
-100
(V)
-0.01
-0.1
Drain current
-1
ID
-10
(A)
Dynamic Input Characteristic
-8
Gate–source voltage
VGS
(V)
Common Source
ID = -3.5 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
2
4
Total gate charge
6
8
Qg
10
(nC)
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Rth
PD – Ta
– tw
1000
1400
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
1200
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm2 )
b
100
Power dissipation PD (mW)
Transient thermal impedance
Rth (°C/W)
SSM6P47NU
a
10
Single pulse
a. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
1
0.001
b. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.13 mm2)
0.01
0.1
1
Pulse width
10
tw
100
1000
a
800
600
400
b
200
0
-40
1000
(s)
5
-20
80
100
120 140
Ambient temperature
0
20
40
60
Ta
(°C)
160
2011-03-10
SSM6P47NU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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