TOSHIBA SSM6K30FE

SSM6K30FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Π-MOSⅦ)
SSM6K30FE
○ High speed switching
○ DC-DC Converter
Unit: mm
•
Small package
•
Low RDS (ON)
: Ron = 210 mΩ (max) (@VGS = 10 V)
•
High speed switching
: ton = 19 ns (typ)
: Ron = 420 mΩ (max) (@VGS = 4 V)
: toff = 10 ns (typ)
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±20
V
DC
ID
1.2
Pulse
IDP
2.4
Drain current
Drain power dissipation
PD (Note 1)
1,2,5,6 : Drain
3
: Gate
4
: Source
A
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note:
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Marking
6
Equivalent Circuit (top view)
5
4
6
5
4
3
1
2
3
KA
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against static electricity. Operators should wear anti-static clothing, and containers
and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM6K30FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-Source on-resistance
RDS (ON)
Test Condition
Min
Typ.
Max
Unit
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
ID = 1 mA, VGS = 0
20
⎯
⎯
V
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
VDS = 5 V, ID = 0.1 mA
1.1
⎯
2.3
V
VDS = 5 V, ID = 0.6 A
(Note 2)
0.68
⎯
⎯
S
ID = 0.6 A, VGS = 10 V
(Note 2)
⎯
145
210
ID = 0.6 A, VGS = 4 V
(Note 2)
⎯
260
420
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
60
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
17
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
47
⎯
pF
Switching time
Turn-on time
ton
VDD = 10 V, ID = 0.6 A,
⎯
19
⎯
Turn-off time
toff
VGS = 0~4 V, RG = 10 Ω
⎯
10
⎯
ns
Note 2:Pulse measurement
Switching Time Test Circuit
(a) Test circuit
4 V
(b) VIN
in
4V
out
0V
RG
0
10 μs
VDD
(c) VOUT
VDD = 10 V
RG = 10Ω
< 1%
Duty =
VIN: tr, tf < 5 ns
Common source
Ta = 25°C
90%
10%
VDD
VDS (ON)
10%
90%
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
0.1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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SSM6K30FE
ID - V D S
ID - V G S
3
10
10V
(A)
2.5
Common Source
Ta=25℃
6V
4V
Common Source
VDS =3V
3.7V
1
(A)
3.3V
1
3.0V
VGS =2.1V
0
0
0.5
1
-25℃
Ta=100℃
0.01
0.001
2.5V
0.5
25℃
0.1
D
1.5
Drain current I
Drain currrent I
D
2
1.5
0.0001
2
0
1
2
3
R D S(O N) - I D
R D S(O N) - V G S
0.5
0.5
Common Source
ID=0.6A
Common Source
Ta=25℃
0.4
Drain-Source on-resistance
R DS(ON) (Ω)
Drain-Source on-resistance
R DS(ON) (Ω)
0.4
0.3
VGS =4V
0.2
10V
0.1
0.3
Ta=100℃
25℃
0.2
-25℃
0.1
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
2
4
Drain current I D (A)
6
8
10
12
Gate-Source Voltage V GS (V)
V th - T a
R D S(O N) - T a
2
0.5
Common Source
I D=0.6A
Common Source
ID=0.1mA
VDS =5V
1.8
1.6
0.4
1.4
Gate threshold voltage
Vth(V)
Drain-Source on-resistance
R DS(ON) (Ω)
4
Gate-Source voltage V GS (V)
Drain-Source voltage V DS (V)
VGS =2.5V
0.3
0.2
4V
0.1
1.2
1
0.8
0.6
0.4
0.2
0
0
-25
0
25
50
75
100
125
150
-25
Ambient temperture Ta (℃)
0
25
50
75
100
125
150
Ambient temperture Ta (℃)
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SSM6K30FE
ID R - V D S
|Y fs| - I D
3
10000
Common Source
VGS =0
Ta=25℃
2.5
(mA)
Forward transfer admittance |Yfs| (mS)
Common Source
V DS =5V
Ta=25℃
Drain reverse current I
DR
1000
100
10
2
1.5
1
0.5
0
1
0.001
0.01
0.1
1
0
10
-0.2
-0.4
-0.6
C - V DS
-1
-1.2
-1.4
t - ID
1000
1000
Common Source
VGS =0V
f=1MHz
Ta=25℃
Common Source
VDD=10V
VGS =0～ 4V
Ta=25℃
toff
100
tf
100
Switching time t (ns)
Capacitance C (pF)
-0.8
Drain-Source voltage V DS (V)
Drain current I D (A)
Ciss
Coss
10
Crss
ton
10
tr
1
1
0.1
1
10
0.1
0.01
100
Drain-Source voltage V DS (V)
0.1
1
10
Drain curren I D (A)
Dyn amic In p u t Ch ara cteristic
12
Common Source
VDD=16V
Gate-Source voltage V
GS(V)
10
I D=1.2A
Ta=25℃
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
Tatal gate charge Qg (nC)
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SSM6K30FE
S a fe o p eratin g area
10
IDmax (Pulse) *
1ms
1
10ms
(A)
IDmax
(continuous)
Drain current I
D
DC operation
Ta=25℃
100ms
0.1
Mounted on FR4 board
(25.4mm×25.4mm×1.6t)
Cu pad：645mm2
* Single Pulse
Ta=25℃
Curves must be derated linearly
with increase in temperture.
0.01
0.001
0.1
1
10
100
Drain-Source voltage V DS (V)
PD - Ta
600
Mounted on FR4 board
(25.4mm×25.4mm×1.6t)
Cu pad：645mm2
Drain power dissipation　P
D (mW)
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (℃)
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SSM6K30FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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