2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) High Speed MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Base Voltage VCBO 1500 V Collector−Emitter Voltage VCEO 700 V Emitter−Base Voltage VEBO 5 V DC IC 10 Pulse ICP 20 Base Current IB 5 Collector Power Dissipation PC Junction Temperature Tj Tstg −55~150 °C Collector Current Storage Temperature Range A JEDEC ― A JEITA ― 50 W TOSHIBA 150 °C Weight: 5.5 g (typ.) 2-16E3A ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT Collector Cut−off Current ICBO VCB = 1500 V, IE = 0 ― ― 1 mA Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 100 µA V (BR) CEO IC = 10 mA, IB = 0 700 ― ― V hFE (1) VCE = 5 V, IC = 1 A 28 ― 60 hFE (2) VCE = 5 V, IC = 6 A 6.2 ― 10 hFE (3) VCE = 5 V, IC = 8 A 4.3 ― 6.7 Collector − Emitter Breakdown Voltage DC Current Gain ― Collector−Emitter Saturation Voltage VCE (sat) IC = 8 A, IB = 2 A ― ― 3 V Base−Emitter Saturation Voltage VBE (sat) IC = 8 A, IB = 2 A ― 1.0 1.4 V VCE = 10 V, IC = 0.1 A ― 2 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 120 ― pF ― 2.8 ― ― 0.2 ― ― 2.3 ― ― 0.1 ― Transition Frequency fT Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time Cob tstg(1) tf(1) tstg(2) tf(2) ICP = 6 , IB1 (end) = 0.8 A fH = 32 kHz ICP = 5.5 A, IB1 (end) = 0.8 A fH = 80 kHz 1 µs µs 2004-5-18 2SC5855 IC – VCE 10 2.5 1.2 1.0 1.8 2.0 1.4 1.6 Collector current IC (A) 8 0.8 0.6 6 0.4 IB = 0.2 A 4 2 Common emitter Tc = 25℃ 0 0 2 4 6 10 8 Collector-emitter voltage VCE (V) hFE – IC 100 Tc = 100°C DC current gain hFE 25 −25 10 Common emitter 1 0.01 VCE = 5 V 0.1 1 10 Collector current IC (A) IC – VBE 10 Common emitter VCE = 5 V Collector current IC (A) 8 6 Tc = 100°C −25 4 2 0 25 0 0.2 0.4 0.6 Base-emitter voltage 0.8 1.0 1.2 VBE (V) 2 2004-5-18 2SC5855 VCE – IB VCE(sat) – IC Common emitter Tc = −25℃ 10 Collector-emitter saturation voltage VCE(sat) (V) 8 Collector-emitter voltage 6 Ic = 8 A 7 6 5 4 2 0 0 0.4 1.2 1.6 Base current IB (A) 0.8 2.0 IC/IB = 4 1 8 0.1 0.01 2.4 1 10 Collector-emitter saturation voltage VCE (sat) (V) 10 8 Collector-emitter voltage VCE (V) 10 Common emitter Tc = 25℃ 6 Ic = 8 A 7 4 2 0 0 0.4 0.8 1.2 1.6 Base current IB 2.0 IC/IB = 4 1 8 0.1 1 Collector current IC (A) VCE (sat) – IC 10 Common emitter Tc = 100℃ 10 Collector-emitter saturation voltage VCE (sat) (V) 8 VCE (V) 100 10 (A) VCE – IB Collector-emitter voltage Common emitter Tc = 25℃ 6 0.01 2.4 10 6 5 6 7 Ic = 8 A 4 2 0 (A) VCE (sat) – IC 10 6 100 Collector current IC VCE – IB 5 Common emitter Tc = −25℃ 6 10 VCE (V) 10 0 Common emitter Tc = 100℃ 6 IC/IB = 4 1 8 0.1 0.01 0.4 0.8 1.2 Base current 1.6 2.0 2.4 1 10 Collector current IC (A) 3 100 IC (A) 2004-5-18 2SC5855 rth(j-c) – tw Transient thermal impedance (junction-case) rth(j-c) (°C/W) 10 1 0.1 0.01 Tc = 25℃ (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10μ 100μ 10m 1m 1 100m Pulse width tw 10 Safe Operating Area Reverse Bias – Safe Operating Area 100 IC max (Pulse)* 100 µs* IC max (Pulse) 10 µs* DC operation Tc = 25°C 10 ms* 100 ms* *:Single nonrepetitive pulse Curves must be linearly with increase 1 0.1 0.01 Tc = 25°C Ta = 25℃ Non repeated pulse derated in VCEO max temperature. 0.01 1 290V,20A 10 Collector current IC (A) Collector current IC (A) 1 ms* IC max (Continuous) 1 0.1 1000 (s) 100 10 100 10 100 Collector-emitter voltage VCE 0.001 10 1000 (V) IB2 = −2A L = 500 μH 1500V,2mA 100 VCBO max 10000 1000 Collector-emitter voltage VCE (V) PC – Tc Collector power dissipation PC (W) 100 Infinite heat sink 80 60 40 20 0 0 25 50 75 Case temperature 100 Tc 125 150 (°C) 4 2004-5-18 2SC5855 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-5-18