2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.2 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 2 ICP 4 IB 0.5 Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 15 A A W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC5548A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 ― ― 20 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 20 ― ― DC current gain hFE (2) VCE = 5 V, IC = 0.2 A 40 ― 100 Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.3 V ― ― 0.5 ― ― 3.0 ― ― 0.3 VCC ≈ 200 V Switching time Storage time IB2 tstg INPUT Fall time tf IB1 IB21 IB1 = 0.1 A, IB2 = −0.2 A IC 250 Ω 20 µs tr IB1 Rise time OUTPUT µs DUTY CYCLE ≤ 1% Marking C5548A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC5548A IC – VCE hFE – IC 2.0 1000 150 300 hFE 100 1.6 80 60 1.2 DC current gain Collector current IC (A) 200 40 0.8 20 IB = 10 mA 0.4 Tc = 100°C 100 25 30 −55 10 3 Common emitter Common emitter VCE = 5 V Tc = 25°C 0 0 2 4 6 8 Collector-emitter voltage VCE 1 0.001 10 0.003 0.01 (V) VCE (sat) – IC IC/IB = 8 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter Tc = 100°C 25 −55 0.1 0.1 0.03 0.3 3 1 3 25 1 −55 Tc = 100°C 0.3 0.1 0.01 10 0.03 0.1 1 0.3 3 Collector current IC (A) IC – VBE PC – Ta 20 2.0 (1) Tc = Ta infinite heat sink (2) No heat sink PC (W) Common emitter VCE = 5 V 1.6 Collector power dissipation IC (A) 3 IC/IB = 8 Collector current IC (A) Collector current 1 Common emitter 0.3 1.2 0.8 0.4 Tc = 100°C 0 0 0.3 10 1 0.03 0.01 0.1 VBE (sat) – IC 10 3 0.03 Collector current IC (A) 0.4 25 −55 0.8 Base-emitter voltage 1.2 VBE 16 12 8 4 (2) 0 0 1.6 (V) (1) 25 50 75 100 125 Ambient temperature 3 Ta 150 175 200 (°C) 2005-02-01 2SC5548A Transient thermal resistance rth (°C/W) rth – tw 300 (2) 100 50 30 (1) 10 5 3 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 1 0.5 0.001 0.01 0.1 1 Pulse width 10 tw Switching Characteristics – IC 5 3 (µs) 1 ms* Switching time Collector current IC (A) tstg 10 µs* 1 0.3 DC operation Tc = 25°C 10 ms* 0.1 IC = 8IB1 2IB1 = −IB2 VCC ≈ 200 V Pulse width = 20µs Duty cycle ≤ 1％ Tc = 25°C 100 µs* IC max (pulsed)* 3 IC max (continuous) 0.5 1000 (s) Safe Operating Area 10 5 100 100 ms* 1 0.5 0.3 0.05 tf 0.03 0.1 0.1 0.3 0.5 1 3 5 10 Collector current IC (A) 0.01 0.005 *: Single nonrepetitive pulse Tc = 25°C 0.003 Curves must be derated linearly with increase in temperature. 0.001 1 3 10 30 Collector-emitter voltage VCEO max 100 VCE 300 1000 (V) 4 2005-02-01 2SC5548A RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01