CMZB12~CMZB53
TOSHIBA Zener Diode
Silicon Diffused Type
CMZB12~CMZB53
○ Communication, Control and
Measurement Equipment
○ Constant Voltage Regulation
○ Transient Suppressors
0.65 ± 0.2
Unit: mm
Average power dissipation: P = 1.0 W
•
Zener voltage: VZ = 12 to 53 V
•
Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLATTM
①
1.75 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Rating
Power dissipation
P
Junction temperature
Tj
−40 to 150
°C
Tstg
−40 to 150
°C
Storage temperature range
1.0 (Note 1)
Unit
Note 1: Ta = 40°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
Soldering size: 6 mm × 6 mm
Board thickness: 1.6 mm
W
0.98 ± 0.1
Symbol
+ 0.2
2.4 − 0.1
0 ~ 0.1
Characteristics
0.16
0.65 ± 0.2
•
4.7 ± 0.2
3.8 ± 0.1
②
① ANODE
② CATHODE
JEDEC
―
JEITA
―
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current /
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2005-09
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2013-11-01
CMZB12~CMZB53
Electrical Characteristics (Ta = 25°C)
Zener Voltage
Vz (V)
Type
Zener Impedance
rd (Ω)
Measurement
Current
IZ (mA)
Min
Typ.
Max
CMZB12
10.8
12
13.2
10
30
CMZB13
11.7
13
14.3
10
CMZB15
13.5
15
16.5
CMZB16
14.4
16
17.6
CMZB18
16.2
18
CMZB20
18.0
CMZB22
Max
Measurement
Current
IZ (mA)
Temperature
Coefficient
Of Zener
αT (mV/°C)
Forward Voltage
VF (V)
Measurement
Current
IF (A)
Reverse Current
IR (μA)
Typ.
Max
Max
10
8
13
1.2
0.2
10
8
30
10
9
14
1.2
0.2
10
9
10
30
10
11
17
1.2
0.2
10
10
10
30
10
12
19
1.2
0.2
10
11
19.8
10
30
10
14
23
1.2
0.2
10
13
20
22.0
10
30
10
16
26
1.2
0.2
10
14
19.8
22
24.2
10
30
10
18
28
1.2
0.2
10
16
CMZB24
21.6
24
26.4
10
30
10
20
32
1.2
0.2
10
17
CMZB27
24.3
27
29.7
10
30
10
23
36
1.2
0.2
10
19
CMZB30
27.0
30
33.0
10
30
10
25
40
1.2
0.2
10
21
CMZB33
29.7
33
36.3
10
30
10
26
41
1.2
0.2
10
26.4
CMZB36
32.4
36
39.6
9
30
9
28
45
1.2
0.2
10
28.8
CMZB39
35.1
39
42.9
8
35
8
30
48
1.2
0.2
10
31.2
CMZB43
38.7
43
47.3
7
40
7
33
53
1.2
0.2
10
34.4
CMZB47
42.3
47
51.7
6
65
6
38
60
1.2
0.2
10
37.6
CMZB51
45.9
51
56.1
6
65
6
43
68
1.2
0.2
10
40.8
CMZB53
47.7
53
58.3
5
85
5
49
77
1.2
0.2
10
42.4
2
Max
Measurement
Voltage
VR (V)
2013-11-01
CMZB12~CMZB53
Marking
Abbreviation Code
Part No.
Abbreviation Code
Part No.
B12
CMZB12
B30
CMZB30
B13
CMZB13
B33
CMZB33
B15
CMZB15
B36
CMZB36
B16
CMZB16
B39
CMZB39
B18
CMZB18
B43
CMZB43
B20
CMZB20
B47
CMZB47
B22
CMZB22
B51
CMZB51
B24
CMZB24
B53
CMZB53
B27
CMZB27
Standard Soldering Pad
2.1
Unit: mm
1.4
3.0
1.4
Handling Precaution
1)
The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even
for a moment. Do not exceed any of these ratings. The following are the general derating methods that we
recommend when you design a circuit with a device.
P:
We recommend that the worst case power dissipation be no greater than 50% of the
absolute maximum rating of power dissipation. Carry out adequate heat design.
PRSM:
We recommend that a device be used within the recommended area in the figure,
PRSM-tw.
Tj:
Derate this rating when using a device in order to ensure high reliability.
We recommend that the device be used at Tj of below 120°C.
2)
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition.
When using a device, design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
3)
Please refer to the Rectifiers databook for further information.
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CMZB12~CMZB53
Ta max – P
PRSM – tW (reference value)
PRSM
120
80
40
0
0
0.2
0.4
0.6
0.8
1.0
Power dissipation P
tW
Ta = 25°C
Rectangular pulse
100
Recommended
10
0.1
1.2
1
Pulse width
(W)
αT – V Z
10
tW
(ms)
αT – V Z
(typ.)
(typ.)
50
25
CMZB12 to CMZB27
CMZB30 to CMZB53
Temperature coefficient of
Zener voltage αT (mV/°C)
Temperature coefficient of
Zener voltage αT (mV/°C)
1000
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
Non-repetitive peak reverse
Power dissipation PRSM (W)
Maximum allowable temperature
Ta max (°C)
160
20
15
10
5
10
15
20
Zener voltage
25
45
40
35
30
25
26
30
VZ (V)
30
34
38
42
Zener voltage
46
VZ
50
54
58
(V)
rth (j-a) – t
Transient thermal impedance
rth (j-a) (°C/W)
1000
Device mounted on a glass-epoxy board:
Board size: 50 mm × 50 mm
Soldering land: 2.1 mm × 1.4 mm
Board thickness: 1.6 mm
100
10
1
0.1
0.001
Device mounted on a glass-epoxy board:
Board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
Board thickness: 1.6 mm
Device mounted on a ceramic board:
Board size: 50 mm × 50 mm
Soldering land: 2.0 mm × 2.0 mm
Board thickness: 0.64 mm
0.01
0.1
1
10
100
1000
Time t (s)
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CMZB12~CMZB53
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
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