SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU ○ High Speed Switching Applications ○ Analog Switch Applications • 1.5Vdrive • Low ON-resistance Unit: mm RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ± 10 V DC ID 250 Pulse IDP 500 Drain current Power dissipation 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: PD(Note1) mA JEDEC ― JEITA ― TOSHIBA 2-2J1C Using continuously under heavy loads (e.g. the application of Weight: 6.8 mg(typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm2 × 6) 0.8 mm 0.4 mm Marking(top view) 6 5 4 Equivalent Circuit (top view) 6 2 4 Q1 SU 1 5 Q2 3 1 2 3 1 2010-08-31 SSM6N37FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -10 V 12 ⎯ ⎯ Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain-source breakdown voltage V Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 100 mA (Note2) 0.14 0.28 ⎯ S ID = 100 mA, VGS = 4.5 V (Note2) ⎯ 1.65 2.20 ID = 50 mA, VGS = 2.5 V (Note2) ⎯ 2.16 3.02 ID = 20 mA, VGS = 1.8 V (Note2) ⎯ 2.66 4.05 ID = 10 mA, VGS = 1.5 V (Note2) ⎯ 3.07 5.60 ⎯ 12 ⎯ ⎯ 5.5 ⎯ ⎯ 4.1 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching time VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-on time ton VDD = 10 V, ID = 100 mA ⎯ 18 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 36 ⎯ ID = -250 mA, VGS = 0 V ⎯ -0.9 -1.2 Drain-Source forward voltage VDSF (Note2) Ω pF ns V Note2: Pulse test Switching Time Test Circuit (b) VIN (a) Test Circuit 2.5 V OUT 0V 10 μs RG IN VDD = 10 V RG = 50Ω Duty ≤ 1% VIN : tr, tf < 5 ns Common source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the SSM6N37FU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2010-08-31 SSM6N37FU (Q1, Q2 Common) ID – VDS Common Source Ta = 25 °C Pulse test (mA) 10 V 2.5 V 4.5 V 100 Ta = 100 °C 300 ID 400 ID – VGS 1000 1.8 V Drain current Drain current ID (mA) 500 1.5 V 200 VGS = 1.2 V 100 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V Pulse test 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS 5 Ta = 100 °C 2 − 25 °C 1 4 2 6 Gate-source voltage 8 VGS 4 1.5 V 2.5V 2 VGS = 4.5Ｖ 0 (V) 100 200 Drain current 100m A / 4.5 V 1 50 Ambient temperature (mA) VDS = 3 V Vth (V) Gate threshold voltage Drain-source ON-resistance RDS (ON) (Ω) 3 2 500 Common Source ID = 10m A / VGS = 1.5 V 20m A / 1.8 V 0 ID 400 Vth – Ta 50m A / 2.5 V 0 −50 300 1.0 Common Source Pulse test 4 Common Source Ta = 25°C Pulse test 1 0 10 1.8 V 3 RDS (ON) – Ta 5 (V) 5 25 °C 3 0 VGS RDS (ON) – ID 4 0 3.0 6 ID =100mA Common Source Pulse test Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) 6 2.0 100 Ta ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2010-08-31 IDR – VDS |Yfs| – ID 1000 1000 IDR 300 (mA) Common Source VDS = 3 V Ta = 25°C Pulse test Drain reverse current Forward transfer admittance ⎪Yfs⎪ (mS) SSM6N37FU 100 30 10 100 10 1 Drain current ID 100 25 °C 10 1 S –0.5 –1.0 Drain-source voltage (mA) C – VDS VDS (ns) (pF) 50 t C Switching time Capacitance Ciss 10 Coss 5 Common Source 3 Crss Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 1 10 Drain-source voltage VDS tf 100 ton 10 tr 1 100 (V) (V) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 50Ω toff 30 –1.5 t – ID 1000 100 IDR G −25 °C 0.1 0 1000 Common Source VGS = 0 V Pulse test D Ta =100 °C 1 10 Drain current 100 ID 1000 (mA) PD – Ta 500 Power dissipation PD (mW) Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32 mm × 6) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 2010-08-31 SSM6N37FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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