TOSHIBA TLP559IGM

TLP559(IGM)
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO IC
TLP559(IGM)
TRANSISTOR INVERTER
INVERTER FOR AIR CONDITIONER
LINE RECEIVER
IPM INTERFACES
Unit: mm
The TOSHIBA TLP559(IGM) consists of a GaAlAs high-output light
emitting diode and a high speed detector of one chip photo diodetransistor.
This unit is 8-lead DIP package.
TLP559(IGM) has no internal base connection,and a Faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
TLP559(IGM) guarantees minimum and maximum of propagation
delay time,switching time dispersion,and high common mode
transient immunity.There for TLP559(IGM) is suitable for isolation
interface between IPM(Intelligent Power Module) and control IC
circuits in motor control application.
l Isolation Voltage
JEDEC
EIAJ
TOSHIBA
Weight: 0.54 g
: 2500 Vrms (Min)
l Common Mode Transient Immunity
―
―
11−10C4
:±10kV/µs (Min)
@VCM = 1500 V
l Switching Time
: tpHL , tpLH = 0.1µs (Min)
= 0.8µs (Max)
@IF = 10 mA , VCC = 15 V , RL = 20 kΩ , Ta = 25°C
l Switching Time Dispersion : 0.7µs (Max)
(|tpLH−tpHL|)
l TTL Compatible
l UL Recognized
: UL1577, File No. E67349
PIN CONFIGURATION(Top view)
SCHEMATIC
1:N.C.
2:ANODE
3:CATHODE
4:N.C.
5:EMITTER
6:COLLECTOR
7:N.C.
8:VCC
SHIELD
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TLP559(IGM)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
(Note 1)
IF
25
mA
Pulse Forward Current
(Note 2)
IFP
50
mA
Peak Transient Forward Current
(Note 3)
IFPT
1
A
VR
5
V
(Note 4)
PD
45
mW
Output Current
IO
8
mA
Peak Output Current
IOP
16
mA
Output Voltage
VO
−0.5~20
V
Supply Voltage
VCC
−0.5~30
V
PO
100
mW
Operating Temperature Range
Topr
−55~100
°C
Storage Temperature Range
Tstg
−55~125
°C
LED
Forward Current
Reverse Voltage
DETECTOR
Diode Power Dissipation
Output Power Dissipation
(Note 5)
Lead Solder Temperature(10s)
(Note 6)
Tsol
260
°C
Isolation Voltage(AC,1min.,R.H.≤60%,Ta=25°C)
(Note 7)
BVS
2500
Vrms
(Note 1) Derate 0.5mA above 70°C.
(Note 2) 50% duty cycle,1ms pulse width.
Derate –1.0mA/°C above 70°C.
(Note 3) Pulse width PW≤1µs,300pps.
(Note 4) Derate 0.9mW/°C above 70°C.
(Note 5) Derate 2mW/°C above 70°C.
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considerd a two terminal device : pins1,2,3 and 4 shorted together and
pins5,6,7 and 8 shorted together.
ELECTRICAL CHARACTERISTICS (Ta = 25℃
℃)
CHARACTERISTIC
DETECTOR
LED
Forward Voltage
Forward Voltage
Temperature Coefficient
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VF
IF = 16 mA
―
1.65
1.85
V
∆VF /∆Ta
IF = 16 mA
―
−2
―
mV /°C
Reverse Current
IR
VR = 5 V
―
―
10
µA
Capacitance between Terminal
CT
V = 0, f = 1 MHz
―
45
―
pF
IOH (1)
IF = 0 mA, VCC = VO = 5.5 V
―
3
500
nA
IOH (2)
IF = 0 mA, VCC = 30 V
VO = 20 V
―
―
5
IOH
IF = 0 mA, VCC = 30 V
VO = 20 V, Ta = 70°C
―
―
50
High Level Supply Voltage
ICCH
IF = 0 mA, VCC = 30 V
―
0.01
1
µA
Supply Voltage
VCC
ICC = 0.01 mA
30
―
―
V
Output Voltage
VO
IO = 0.5 mA
20
―
―
V
High Level Output Current
2
µA
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TLP559(IGM)
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25℃
℃)
CHARACTERISTIC
SYMBOL
Current Transfer Ratio
TEST CONDITION
I O / IF
Low Level Output Voltage
VOL
MIN.
TYP.
MAX.
UNIT
IF = 10 mA, VCC = 4.5 V
VO = 0.4 V
25
35
75
IF = 10 mA, VCC = 4.5 V
VO = 0.4 V, Ta = −25~100°C
15
―
―
IF = 16 mA, VCC = 4.5 V
IO = 2.4 mA
―
―
0.4
V
MIN.
TYP.
MAX.
UNIT
―
0.8
―
pF
―
Ω
%
ISOLATION CHARACTERISTICS (Ta = 25℃
℃)
CHARACTERISTIC
SYMBOL
Capacitance Input to Output
TEST CONDITION
CS
Isolation Resistance
V = 0, f = 1 MHz
RS
R.H.≤60%, VS = 500 V
BVS
5×10
14
10
2500
―
―
AC , 1second, in oil
―
5000
―
DC , 1minute,in oil
―
5000
―
Vdc
MIN.
TYP.
MAX.
UNIT
IF = 10 mA, RL = 20 kΩ
0.1
0.45
0.8
IF = 10 mA, RL = 20 kΩ
Ta = 0~85°C
0.1
0.45
0.9
IF = 10 mA, RL = 20 kΩ
Ta = −25~100°C
0.1
0.45
1.0
IF = 10 mA, RL = 20 kΩ
―
0.15
0.7
IF = 10 mA, RL = 20 kΩ
Ta = 0~85°C
―
0.25
0.8
IF = 20 mA, RL = 20 kΩ
Ta = −25~100°C
―
0.25
0.9
IF = 0 mA,
VCM = 1500 Vp−p,
RL = 20 kΩ
10000
15000
―
V /µs
IF =10 mA,
VCM = 1500 Vp−p,
RL = 20 kΩ
−10000 −15000
―
V /µs
AC , 1minute
Isolation Voltage
10
Vrms
SWITCHING CHARACTERISTICS (Ta = 25℃、
℃、V
℃、 CC = 15 V)
CHARACTERISTIC
SYMBOL
Propagation Delay Time (H→L)
Propagation Delay Time (L→H)
TEST
CIRCUIT
tpHL
tpLH
1
Switching Time
Dispersion between ON
and OFF
Common Mode
Transient Immunity at
Logic High Output
|tpLH−tpHL|
(Note 8)
CMH
2
Common Mode
Transient Immunity at
Logic Low Output
(Note 8)
CML
TEST CONDITION
µs
µs
(Note 8) CML is the maximum rate of fall of the common mode voltage that can be
sustained with the output voltage in the logic low state(Vo<1V).
CMH is the maximum rate of rise of the common mode voltage that can be
sustained with the output voltage in the logic high state(Vo>4V).
(Note 9) Maximum electrostatic discharge voltage for any pins : 100V(C=200pF,R=0)
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TLP559(IGM)
TEST CIRCUIT 1 : Switching time test circuit
PULSE INPUT
PW=100µ
DUTY RATIO=1/10
IF MONITOR
OUTPUT
MONITOR
TEST CIRCUIT 2 : Common mode noise immunity test circuit
OUTPUT
MONITOR
PULSE GENERATOR
10mA
CMH =
1200( V )
1200( V )
、CML =
t r ( ms )
t f ( ms )
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TLP559(IGM)
RESTRICTIONS ON PRODUCT USE
000707EBC
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
·
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
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