TOSHIBA TLP750

TLP750
TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
TLP750
Degital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
Unit in mm
The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in
noisy environmental conditions.
·
Switching speed: tpHL=0.3µs(typ.)
·
Switching speed: tpLH=0.5µs(typ.)(RL=1.9kΩ)
·
UL recognized: UL1577, file No. E67349
·
BSI approved: BS EN60065: 1994,
TOSHIBA
Weight: 0.54g
Certificate No.7613
BS EN60950: 1992,
Certificate No.7614
·
Isolation voltage: 5000Vrms(min.)
·
Option(d4)type
Pin Configuration (top view)
1
1
8
2
7
Highest permissible over voltage: 8000VPK
3
6
(Note)
4
5
VDE approved: DIN VDE0884/06.92,
Certificate No.68384
Maximum operating insulation voltage: 890VPK
·
11−10C4
When a VDE0884 approved type is needed,
please designate the “Option(D4)”
: N.C.
2 : Anode
3
: Cathode
4
: N.C.
5
: Emitter
6
: Collector
7
: N.C.
8
: Cathode
Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)
Schematic
ICC
VCC
8
IF
2
VF
3
IO
VO
6
GND
5
1
2002-09-25
TLP750
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
(Note 1)
IF
25
mA
Pulse forward current
(Note 2)
IFP
50
mA
Peak transient forward
current
(Note 3)
IFPT
1
A
VR
5
V
PD
45
mW
Output current
IO
8
mA
Peak output current
IOP
16
mA
Output voltage
VO
-0.5~15
V
Supply voltage
VCC
-0.5~15
V
PO
100
mW
Operating temperature range
Topr
-55~100
°C
Storage temperature range
Tstg
-55~125
°C
(Note 6)
Tsol
260
°C
(Note 7)
BVS
5000
Vrms
LED
Forward current
Reverse voltage
Diode power dissipation
Detector
(Note 4)
Output power dissipation
(Note 5)
Lead solder temperature(10s)
Isolation voltage
(AC, 1min., R.H=60%)
(Note 1) Derate 0.8mA / °C above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width ≤ 1µs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
2
2002-09-25
TLP750
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Detector
LED
Forward voltage
Forward voltage
temperature coefficient
Test Condition
Typ.
Max.
Unit
VF
IF=16mA
―
1.65
1.85
V
∆VF / ∆Ta
IF=16mA
―
-2
―
mV / °C
Reverse current
IR
VR=5V
―
―
10
µA
Capacitance between
terminal
CT
VF=0, f=1MHz
―
45
―
pF
IOH(1)
IF=0mA, VCC=VO=5.5V
―
3
500
nA
IOH(2)
IF=0mA, VCC=VO=15V
―
―
5
µA
IOH
IF=0mA, VCC=VO=15V
Ta=70°C
―
―
50
µA
ICCH
IF=0mA, VCC=15V
―
0.01
1
µA
10
30
―
IO/IF
IF=16mA
VCC=4.5V
VO=0.4V
19
30
―
5
―
―
15
―
―
―
―
0.4
V
1×1012
1014
―
Ω
―
0.8
―
pF
Min.
Typ.
Max.
Unit
High level output
current
High level supply
voltage
Ta=25°C
Current transfer ratio
Coupled
Min.
Rank: 0
Ta=0~70°C
Rank: 0
Low level output
voltage
VOL
Isolation resistance
RS
Capacitance between
input to output
CS
IF=16mA, VCC=4.5V,
IO=1.1mA
(rank 0: IO=2.4mA)
R.H.=60%, V=5000VDC
VS=0, f=1MHz
(Note 7)
(Note 8)
%
Switching Characteristics (Ta = 25°C, VCC = 5V)
Characteristic
Symbol
Propagation delay time
(H→L)
Test
Circuit
tpHL
1
Propagation delay time
(L→H)
tpLH
Common mode transient
immunity at logic high
output
CMH
Common mode transient
immunity at logic low
output
(Note 8)
(Note 8)
2
CML
Test Condition
IF=0→16mA, VCC=5V,
―
0.2
0.8
RL=4.1kΩ Rank 0: RL=1.9kΩ
―
0.3
0.8
IF=16→0mA, VCC=5V,
―
1.0
2.0
RL=4.1kΩ
―
0.5
1.2
IF=0mA, VCM=200Vp-p
RL=4.1kΩ
(Rank 0: RL=1.9kΩ)
―
1500
―
V / µs
IF=16mA, VCM=200Vp-p
RL=4.1kΩ
(Rank 0: RL=1.9kΩ)
―
-1500
―
V / µs
3
Rank 0: RL=1.9kΩ
µs
µs
2002-09-25
TLP750
(Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage
in the logic low state(VO < 0.8V).
CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state(VO > 2.0V).
(Note 9) Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0)
Test Circuit 1: Switching Time Test Circuit
IF
Pulse
Input
51Ω
PW=100µs
Duty ratio=1/10
IF Monitor
VCC=5V
1
8
2
7
3
6
VO
4
5
Output
Monitor
IF
0
RL
5V
VO
1.5V
VOL
1.5V
tpHL
tpLH
Test Circuit 2: Common Mode Noise Immunity Test Circuit
VCC=5V
IF
1
8
2
7
3
6
4
5
VCM
10%
RL
tr
VO
Output
Monitor
VO
(IF=0mA)
VCM
Pulse generator
90%
200V
0V
tf
5V
2V
0.8V
VO
(IF=16mA)
VOL
ZO=50Ω
CMH =
160( V )
160( V )
,CML =
tr (µs )
t f (µs )
4
2002-09-25
TLP750
100
IF – VF
3
Forward voltage temperature
coefficient ∆VF/∆Ta (mV/°C)
(mA)
Forward current IF
30
10
∆VF/∆Ta – IF
-2.6
Ta = 25 ℃
1
0.3
0.1
-2.4
-2.2
-2.0
-1.8
-1.6
0.03
0.01
1.0
1.2
1.4
1.6
Forward voltage
0.3
(V)
1
Output current IO
30
10
5
3
3
5
IF
(mA)
10
30
IO – IF
10
5
VCC = 5 V
VO = 0.4 V
3
Ta = 25 ℃
1
0.5
0.3
0.1
0.05
0.03
1
0.01
0.1
0.6
0
40
80
120
160
0.3
IO/IF – IF
100
3
10
IF
30
100
300
80
100
(mA)
IO/IF – Ta
1.2
VCC = 5 V
VO = 0.4 V
50
1
Forward current
Ambient temperature Ta (°C)
1.0
30
IO/IF
Ta = -25℃
25℃
Normalized
Current transfer ratio
IO/IF (%)
0.5
Forward current
(mA)
(nA)
High level output current IOH
50
-1.4
0.1
2.0
IOH(1) – Ta
300
100
VF
1.8
100℃
10
5
0.8
0.6
Normalized to:
0.4
IF = 16mA
3
VCC = 4.5V
VO = 0.4V
Ta = 25°C
0.2
1
0.3
0.5
1
3
Forward current
5
IF
10
30
0
-40
50
-20
0
20
40
60
Ambient temperature Ta (°C)
(mA)
5
2002-09-25
TLP750
IO – VO
30 mA
25 mA
8
20 mA
6
15 mA
10 mA
4
IF = 5 mA
2
0
0
1
2
3
4
5
Output voltage VO
5
Propagation delay time
tpLH, tpHL (µs)
3
6
VCC=5V
IF
Output voltage VO (V)
Output current IO (mA)
10
VO – IF
5
VCC = 5 V
Ta = 25 ℃
VO
3
Ta=25°C
RL = 2 KΩ
2
3.9 kΩ
1
0
7
RL
4
10 kΩ
0
4
8
12
Forward current
(V)
16
IF
20
24
(mA)
tpHL, tpLH – RL
IF = 16 mA
VCC = 5 V
Ta = 25 ℃
tpLH
1
0.5
0.3
tpHL
0.1
1
3
5
10
Load resistance RL
30
50
100
(kΩ)
6
2002-09-25
TLP750
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
7
2002-09-25