MICROWAVE POWER GaAs FET TIM4450-45SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level n HIGH POWER P1dB=46.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion SYMBOL P1dB G1dB IDS ∆G ηadd IM3 CONDITIONS UNIT dBm MIN. 46.0 dB 8.5 9.5 A dB % dBc -42 9.6 41 -45 10.8 ±0.8 °C 100 UNIT MIN. TYP. MAX. mS 8000 V -1.0 -2.5 -4.0 A 24 V -5 °C/W 0.8 1.2 VDS= 10V f = 4.4 to 5.0GHz Two-Tone Test Po=35.5dBm TYP. MAX. 46.5 (Single Carrier Level) Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) Recommended Gate Resistance(Rg): 28 Ω (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 11.0A VDS= 3V IDS= 170mA VDS= 3V VGS= 0V IGS= -500µA Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM4450-45SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 125 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.6±0.3 (2) 17.4± 0.4 8.0±0.2 (3) Drain (3) 20.4±0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM4450-45SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS≅9.6A Pout(dBm) Pin=37.0dBm 47 46 45 44 4.4 4.5 4.6 4.7 4.8 4.9 5.0 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 49 freq.=5.0GHz 48 VDS=10V IDS≅9.6A 47 80 46 70 45 60 44 50 ηadd 43 40 42 30 41 20 40 10 31 33 35 37 Pin(dBm) 3 39 41 ηadd(%) Pout(dBm) Pout TIM4450-45SL Power Dissipation(PT) vs. Case Temperature(Tc) 130 PT(W) 110 90 70 50 30 0 40 80 120 160 200 Tc( °C ) IM3 vs. Output Power Characteristics -10 VDS=10V IDS≅9.6A -20 freq.=5.0GHz ∆f=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 Pout(dBm) @Single carrier level 4 38 40