MICROWAVE POWER GaAs FET TIM7785-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Gain Compression Point P1dB Power Gain at 1dB Gain Compression Point G1dB Drain Current IDS1 Gain Flatness ( Ta= 25°C ) CONDITIONS UNIT MIN. TYP. MAX. dBm 45.0 45.5 dB 5.0 6.0 A 8.0 9.0 ∆G dB ±0.8 Power Added Efficiency ηadd % 33 3rd Order Intermodulation Distortion IM3 Two-Tone Test Po=35.0dBm dBc -42 -45 Drain Current IDS2 (Single Carrier Level) A 8.0 9.0 °C 100 CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420µA UNIT mS MIN. TYP. 6500 MAX. V -1.0 -2.5 -4.0 A 20 26 V -5 Channel to Case °C/W 1.0 1.3 VDS=10V f = 7.7 to 8.5GHz Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) Recommended Gate Resistance(Rg): 28 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) ( Ta= 25°C ) u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Nov. 2003 TIM7785-35SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 26 Total Power Dissipation (Tc= 25 °C) PT W 115 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7± 0.15 2.5 MIN. Unit in mm 4 – C1.0 ‚ 2.5 MIN. 2.6± 0.3 ‚ • Gate ‚ Source ƒ Drain 17.4± 0.4 8.0± 0.2 • ƒ 20.4± 0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM7785-35SL RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=10V 47 IDS≅8.0A Pin=39.5dBm 46 45 44 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=8.5GHz VDS=10V 46 80 Pout 44 60 50 42 40 ηadd 30 40 20 10 34 36 38 Pin(dBm) 3 40 ηadd(%) Pout(dBm) 70 TIM7785-35SL Power Dissipation(PT) vs. Case Temperature(Tc) 120 PT(W) 100 80 60 40 20 0 40 80 120 160 200 Tc( °C ) IM3 vs. Output Power Characteristics -10 VDS=10V -20 freq.=8.5GHz ∆f=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 Pout(dBm) @Single carrier level 4 38 40 TIM7785-35SL TIM7785-35SL S-PARAMETERS (MAGN. and ANGLES) VDS=10V, IDS=8.0A f=7.5 to 8.7 GHz 7.7 7.9 7.5 8.1 8.3 8.5 8.3 8.7 8.5 8.7 8.1 7.5 7.9 7.7 S11 FREQUENCY (GHz) MAG 7.50 S12 S21 S22 ANG MAG ANG MAG ANG -8.9814 -58.883 7.7466 -132.94 -26.718 -157.88 -6.814 135.77 7.70 -8.3276 -95.847 7.6201 178.84 -26.03 153.1 -7.7217 113.8 7.00 -8.2456 -125.79 7.5867 131.47 -25.415 105.53 -8.8479 90.07 8.10 -9.079 -153.45 7.6876 83.846 -24.785 58.534 -10.106 62.308 8.30 -11.201 177.35 7.8387 35.074 -24.184 10.528 -11.394 28.383 8.50 -15.55 141.44 7.9431 -15.135 -23.802 -38.853 -12.511 -11.132 8.70 -23.587 61.355 7.8793 -66.763 -23.776 -89.791 -13.44 -55.383 5 MAG ANG