2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications Unit: mm High Speed Switching Applications • High transition frequency: fT = 200 MHz (typ.) • Low collector output capacitance: Cob = 3.5 pF (typ.) • Complementary to 2SA1483 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V IC 200 mA IB 50 mA PC 500 Continuous collector current Continuous base current Collector power dissipation PC 1000 (Note 1) Junction temperature Storage temperature range mW PW-MINI JEDEC ― JEITA SC-62 2-5K1A Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 0.05 g (typ.) 2 Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC3803 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 µA VCE = 1 V, IC = 10 mA 40 ― 240 hFE (1) DC current gain (Note 2) hFE (2) VCE = 3 V, IC = 200 mA 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ― ― 0.3 V Base-emitter saturation voltage VBE (sat) IC = 100 mA, IB = 10 mA ― ― 1.0 V fT VCE = 10 V, IC = 10 mA 100 200 ― MHz Input impedance (real part) Collector output capacitance Turn-on time Re (hie) Cob VCE = 10 V, IE = −10 mA, f = 200 MHz ― ― 120 Ω VCB = 10 V, IE = 0, f = 1 MHz ― 3.5 5.0 pF ― 40 ― ― 250 ― ― 30 ― ton OUTPUT Storage time tstg 0 10 V 500 Ω Switching time 50 Ω INPUT 680 Ω VBB = −3 V DUTY CYCLE ≤ 2% 1 µS Fall time Note 2: hFE (1) classification tf 200 Ω Transition frequency VCC = 12 V ns R: 40 to 80, O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) V Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3803 IC – VCE 2.0 2.5 hFE Common emitter Ta = 25°C 160 DC current gain 1.5 1.2 1.0 0.8 120 0.6 80 VCE = 3 V Ta = 100°C 25 100 −55 50 30 0.3 1 3 10 Collector current 3 4 VCE 5 (V) IC – VCE 3.0 Common emitter Ta = 100°C 1.5 Collector-emitter saturation voltage VCE (sat) (V) 2 200 (mA) Common emitter 300 100 300 100 300 VCE (sat) – IC 0.3 Common emitter IC/IB = 10 Ta = 100°C 0.1 0.05 0.03 25 −55 0.01 0.1 0.3 1 3 30 10 Collector current IC (mA) 1.0 0.7 120 0.5 0.4 80 0.3 0.2 40 IB = 0.1 mA 0 1 2 3 4 Collector-emitter voltage VCE 5 (V) VBE (sat) – IC 5 3 Common emitter IC/IB = 10 Ta = −55°C 1 0.5 25 0.3 100 0.1 0.1 0.3 1 3 10 Collector current IC – VCE Common emitter Ta = −55°C 30 IC (mA) PC – Ta 1.2 3.0 2.5 PC (W) 200 160 2.0 Collector power dissipation (mA) 100 0.5 160 0 0 Collector current IC 30 IC (mA) 0 1 Collector-emitter voltage Collector current IC 300 IB = 0.2 mA 40 0 0 500 10 0.1 0.4 Base-emitter saturation voltage VBE (sat) (V) Collector current IC (mA) 200 hFE – IC 1000 1.6 120 1.2 80 0.8 IB = 0.4 mA 40 1.0 (1) Mounted on a ceramic 2 substrate (250 mm × 0.8 t) (1) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 0 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 20 40 60 80 100 Ambient temperature (V) 3 Ta 120 140 160 (°C) 2004-07-07 2SC3803 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07