2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 20 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3074 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1 µA V (BR) CEO IC = 10 mA, IB = 0 V Collector-emitter breakdown voltage DC current gain 50 ― ― hFE (1) VCE = 1 V, IC = 1 A (Note) 70 ― 240 hFE (2) VCE = 1 V, IC = 3 A 30 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V fT VCE = 4 V, IC = 1 A ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF ― 0.1 ― ― 1.0 ― ― 0.1 ― Collector output capacitance Cob Turn-on time ton 20 µs IB1 Switching time Storage time tstg Fall time Note: hFE (1) classification tf IB1 INPUT IB2 IB2 IB1 = −IB2 = 0.15 A, Duty cycle ≤ 1% OUTPUT 10 Ω Transition frequency µs VCC = 30 V O: 70 to 140, Y: 120 to 240 Marking C3074 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3074 IC – VCE VCE – IC 1.2 10 8 Common emitter Tc = 100°C 90 80 70 60 6 50 40 30 4 20 2 Tc = 25°C 1.0 Collector-emitter voltage VCE (V) Collector current IC (A) Common emitter 100 IB = 10 mA 0.8 IB = 10 mA 20 40 60 80 100 150 0.6 200 0.4 300 500 0.2 0 0 0 2 4 6 8 Collector-emitter voltage 10 VCE 0 0 12 1 2 (V) 3 4 5 6 7 Collector current IC (A) VCE – IC VCE – IC 1.0 (V) Common emitter 0.8 40 20 0.6 60 VCE Tc = 100°C 80 100 120 IB = 10 mA Collector-emitter voltage Collector-emitter voltage VCE (V) 1.2 150 0.4 200 500 0.2 0 0 1 2 3 4 5 6 Common emitter 1.0 0.8 IB = 20 mA 40 250 300 500 0.2 1 2 hFE – IC 4 5 6 7 VCE (sat) – IC 1 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 1 V 500 hFE 3 Collector current IC (A) 1000 DC current gain 160 200 0.4 Collector current IC (A) 300 Tc = 100°C 25 100 50 −55 30 10 0.03 120 0.6 0 0 7 Tc = −55°C 0.1 0.3 1 3 Common emitter 0.5 IC/IB = 20 0.3 Tc = −55°C 0.05 Collector current IC (A) 100 0.03 0.01 0.03 10 25 0.1 0.1 0.3 1 3 10 Collector current IC (A) 3 2005-02-01 2SC3074 VBE (sat) – IC IC – VBE 5 10 Common emitter VCE = 1 V IC/IB = 20 IC (A) 3 Tc = −55°C 1 Collector current Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 0.5 25 100 0.3 0.1 0.03 0.1 0.3 1 3 4 3 Tc = 100°C −55 25 2 1 10 0 0 Collector current IC (A) 0.4 0.8 1.2 1.6 Base-emitter voltage Safe Operating Area (V) 28 1 ms* PC (W) IC max (pulsed)* IC max (continuous) 10 ms* DC operation Tc = 25°C 1 Collector power dissipation Collector current IC (A) 3 VBE 2.4 PC – Ta 10 5 2.0 0.5 0.3 0.1 *: Single nonrepetitive pulse 0.05 0.03 Tc = 25°C Curves must be derated 1 3 Collector-emitter voltage 10 VCE 30 (2) Ceramic substrate 50 × 50 × 0.8 mm (1) (3) No heat sink 16 12 8 4 (2) (3) 0 0 temperature. 0.3 20 VCEO max linearly with increase in 0.01 0.1 (1) Tc = Ta infinite heat sink 24 20 40 60 80 100 Ambient temperature 100 Ta 120 140 160 (°C) (V) 4 2005-02-01 2SC3074 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01