TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T TOSHIBA InGaAℓP LED TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T Panel Circuit Indicator Unit in mm · 5 mm package · InGaAℓP technology · All plastic mold type · Transparent lens · High intensity light emission · Excellent low current light output · Applications: outdoor message signboards, safety equipment Line-Up Product Name Color TLRE20T Red TLRME20T Red TLSE20T Red TLOE20T Orange TLYE20T Yellow Material InGaAℓP JEDEC ― EIAJ ― TOSHIBA Weight: 0.31 g Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE20T 50 4 120 -40~100 -40~120 TLRME20T 50 4 120 -40~100 -40~120 TLSE20T 50 4 120 -40~100 -40~120 TLOE20T 50 4 120 -40~100 -40~120 TLYE20T 50 4 120 -40~100 -40~120 1 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T Electrical And Optical Characteristics (Ta = 25°C) Luminous Intensity IV Typ. Emission Wavelength Product Name Forward Voltage VF Reverse Current IR ld lP Dl IF Min Typ. IF Typ. Max IF Max VR TLRE20T 630 (644) 20 20 2720 7000 20 1.9 2.4 20 50 4 TLRME20T 626 (636) 23 20 2720 8000 20 1.9 2.4 20 50 4 TLSE20T 613 (623) 20 20 2720 9000 20 1.9 2.4 20 50 4 TLOE20T 605 (612) 20 20 4760 10000 20 2.0 2.4 20 50 4 TLYE20T 587 (590) 17 20 2720 9500 20 2.0 2.4 20 50 4 mA mA V Unit nm mA mcd mA V Precautions · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: below the lead stopper) · If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T TLRE20T IV – IF IF – VF 30000 50 30 10 5 3 1 1.6 1.7 1.9 1.8 2.0 Forward voltage 10000 1000 Ta = 25℃ 100 1 2.3 2.2 2.1 (mcd) Ta = 25℃ Luminous intensity IV Forward current IF (mA) 100 VF (V) IV – Tc 1.0 3 100 IF (ｍＡ) Relative Luminous Intensity – Wavelength IF = 20m Relative luminous intensity ATa= 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 (℃) 620 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 700 100 120 (nm) 60 40 20 80° 80° 90° 680 80 Ta = 25℃ 20° 660 IF – Ta Radiation Pattern 0° 640 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV 10 Forward current 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 3 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T TLRME20T IF – VF 50000 (mcd) Ta = 25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.9 1.8 2.0 Forward voltage 10000 1000 100 1 2.3 2.2 2.1 IV – IF Ta = 25 VF (V) IV – Tc 1.0 10 Relative Luminous Intensity – Wavelength Ta = 25℃ Relative luminous intensity 5 3 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 (℃) 620 20° 10° 10° 660 680 700 100 120 (nm) IF – Ta 80 Ta = 25℃ 0° 640 Wavelength λ Radiation Pattern 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 60 40 20 80° 80° 90° 100 IF (ｍＡ) IF = 20mA Allowable forward current IF (mA) Relative luminous intensity IV 10 Forward current 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 4 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T TLSE20T IF – VF 50000 (mcd) Ta = 25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.9 1.8 2.0 Forward voltage 10000 1000 100 1 2.3 2.2 2.1 IV – IF Ta = 25℃ VF (V) IV – Tc 1.0 3 100 IF (ｍＡ) Relative Luminous Intensity – Wavelength IF = 20mA Relative luminous intensity Ta = 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 (℃) 620 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 700 100 120 (nm) 60 40 20 80° 80° 90° 680 80 Ta = 25℃ 20° 660 IF – Ta Radiation Pattern 0° 640 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV 10 Forward current 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 Ambient temperature Ta (℃) 5 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T TLOE20T IF – VF 50000 (mcd) Ta = 25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.9 1.8 2.0 Forward voltage 10000 1000 100 1 2.3 2.2 2.1 IV – IF Ta = 25℃ VF (V) IV – Tc 1.0 3 100 IF (ｍＡ) Relative Luminous Intensity – Wavelength IF = 20mA Relative luminous intensity Ta = 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 (℃) 580 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 660 (nm) 60 40 20 80° 80° 90° 640 80 Ta = 25℃ 20° 620 IF – Ta Radiation Pattern 0° 600 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV 10 Forward current 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 100 120 Ambient temperature Ta (℃) 6 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T TLYE20T IF – VF 50000 (mcd) Ta = 25℃ 50 30 Luminous intensity IV Forward current IF (mA) 100 10 5 3 1 1.6 1.7 1.9 1.8 2.0 Forward voltage 10000 1000 100 1 2.3 2.2 2.1 IV – IF Ta = 25℃ VF (V) IV – Tc 1.0 3 100 IF (ｍＡ) Relative Luminous Intensity – Wavelength IF = 20mA Relative luminous intensity Ta = 25℃ 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 (℃) 580 10° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 660 (nm) 60 40 20 80° 80° 90° 640 80 Ta = 25℃ 20° 620 IF – Ta Radiation Pattern 0° 600 Wavelength λ Allowable forward current IF (mA) Relative luminous intensity IV 10 Forward current 0 0.2 0.4 0.6 0.8 0 0 90° 1.0 20 40 60 80 100 120 Ambient temperature Ta (℃) 7 2002-09-25 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-09-25