TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TOSHIBA InGaAℓP LED TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) Panel Circuit Indicator Unit: mm • Lead(Pb)-free products (lead: Sn-Ag-Cu) • 5 mm package • InGaAℓP technology • All plastic mold type • Transparent lens • Lineup: 3colors (red, orange, yellow) • High intensity light emission • Excellent low current light output • Applications: Traffic signals, Safety equipment, Backlight • Stopper lead type is also available. 8.55±0.2 (1.0) TLRH30T(F) , TLRMH30T(F), TLSH30T(F), TLOH30T(F), TLYH30T(F) Cathode index Lineup Product Name Color TLRH30TP(F) Red TLRMH30TP(F) Red TLSH30TP(F) Red TLOH30TP(F) TLYH30TP(F) 1. ANODE 2. CATHODE Material JEDEC ― JEITA ― Orange TOSHIBA ― Yellow Weight: 0.29 g InGaAlP Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) 50 4 120 −40~100 −40~120 TLRH30TP(F) TLRMH30TP(F) TLSH30TP(F) TLOH30TP(F) TLYH30TP(F) For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: [email protected] 1 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR λd λP ∆λ IF Min Typ. IF Typ. Max IF Max VR TLRH30TP(F) 630 (644) 13 20 272 680 20 1.9 2.4 20 50 4 TLRMH30TP(F) 626 (636) 13 20 476 950 20 1.9 2.4 20 50 4 TLSH30TP(F) 613 (623) 13 20 476 1300 20 2.0 2.4 20 50 4 TLOH30TP(F) 605 (612) 13 20 476 1600 20 2.0 2.4 20 50 4 TLYH30TP(F) 587 (590) 13 20 476 1350 20 2.0 2.4 20 50 4 mA µA V Unit nm mA mcd mA V Precautions • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLRH30TP(F) IV – IF IF – V F 10000 100 (mcd) 5 3 3000 IV Forward current 10 1000 500 300 100 50 30 10 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 Ta = 25°C 5000 Luminous intensity 30 IF (mA) Ta = 25°C 50 2.3 1 (V) IV – Tc 10 30 IF 50 100 (mA) Relative luminous intensity – Wavelength 1.0 Relative luminous intensity 5 3 1 0.5 0.3 0.1 −20 0 20 40 Case temperature 60 Tc 0.8 0.6 0.4 0.2 0 580 80 600 (°C) 620 640 Wavelength 660 λ 680 700 (nm) IF – Ta 80 IF (mA) Radiation pattern Ta = 25°C 20° 10° 0° 10° 30° Allowable forward current IV 5 Forward current 10 Relative luminous intensity 3 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 3 80 Ta 100 120 (°C) 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLRMH30TP(F) IF – V F IV – IF 100 10000 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 3000 IV (mA) Forward current IF 30 1000 500 300 100 50 30 10 2.3 Ta = 25°C 5000 Luminous intensity (mcd) Ta = 25°C 50 1 3 (V) 5 10 30 Forward current IV – Tc IF 50 100 (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 −20 0 20 40 Case temperature 60 Tc 0.8 0.6 0.4 0.2 0 580 80 600 (°C) 620 640 Wavelength 660 λ 680 700 100 120 (nm) IF – Ta Radiation pattern (mA) 80 20° 0° 10° 30° IF Ta = 25°C 10° Allowable forward current Relative luminous intensity IV IF = 20 mA 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 4 80 Ta (°C) 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLSH30TP(F) IF – V F IV – IF 100 10000 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 500 50 30 1 3 5 10 30 Forward current IF 50 100 (mA) Relative luminous intensity – Wavelength 1.0 IF = 20 mA Ta = 25°C 5 Relative luminous intensity IV 100 (V) IV – Tc Relative luminous intensity 300 10 2.3 10 3 1 0.5 0.3 0.1 3000 IV (mA) Forward current IF 30 Ta = 25°C 5000 Luminous intensity (mcd) Ta = 25°C 50 −20 0 20 40 Case temperature 60 Tc 0.8 0.6 0.4 0.2 0 560 80 580 600 620 Wavelength (°C) 640 λ 660 680 100 120 (nm) IF – Ta 80 IF (mA) Radiation pattern 20° 10° 0° 10° 30° Allowable forward current Ta = 25°C 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 5 80 Ta (°C) 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLOH30TP(F) IF – V F IV – IF 100 (mcd) (mA) 5000 IV Ta = 25°C 50 1000 Luminous intensity 10000 500 Ta = 25°C 3000 Forward current IF 30 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 30 1 3 5 10 30 Forward current IF 50 100 (mA) Relative luminous intensity – Wavelength 1.0 IF = 20 mA Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 −20 0 20 40 Case temperature 60 Tc 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength (°C) 620 λ 640 660 100 120 (nm) IF – Ta 80 IF (mA) Radiation pattern Ta = 25°C 20° 10° 0° 10° 30° Allowable forward current IV 50 (V) IV – Tc Relative luminous intensity 100 10 2.3 10 0.1 300 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 6 80 Ta (°C) 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLYH30TP(F) IF – V F IV – IF 100 10000 (mcd) Ta = 25°C (mA) 50 Luminous intensity Forward current IF IV 30 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 500 300 100 50 30 1 3 5 10 30 Forward current IF 50 100 (mA) Relative luminous intensity – Wavelength IV – Tc IV 1000 (V) 1.0 10 IF = 20 mA Ta = 25°C 5 Relative luminous intensity Relative luminous intensity 3000 10 2.3 Ta = 25°C 5000 3 1 0.5 0.3 0.1 −20 0 20 40 Case temperature 60 Tc 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength (°C) 620 λ 640 660 100 120 (nm) IF – Ta Radiation pattern (mA) 80 10° 30° Allowable forward current 20° 0° IF Ta = 25°C 10° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 7 80 Ta (°C) 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) RESTRICTIONS ON PRODUCT USE 000707EAC • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 8 2006-09-29