FJPF5555 FJPF5555 High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1050 Units V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A PC Collector Dissipation 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=500µA, IE=0 Min. 1050 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 14 V VCE=5V, IC=10mA 10 VCE=3V, IC=0.8A 20 hFE VCE(sat) * DC Current Gain Collector-Emitter Saturation Voltage Typ. Max. Units V 40 IC=1A, IB=0.2A 0.5 V IC=3.5A, IB=1.0A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC=3.5A, IB=1.0A Cob Output Capacitance VCB=10V, f=1MHz tON Turn On Time tSTG Storage Time tF Fall Time VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250Ω tON Turn On Time tSTG Storage Time tF Fall Time VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100Ω 1.2 45 V pF 1.0 µs 1.2 µs 0.3 µs 2.0 µs 2.5 µs 0.3 µs * Pulse test: PW≤300µs, Duty Cycle≤2% ©2004 Fairchild Semiconductor Corporation Rev. A, June 2004 FJPF5555 Typical Characteristics 5.0 100 o Ta = 75 C VCE = 5V o 4.5 IC [A], COLLECTOR CURRENT Ta = 125 C 4.0 hFE, DC CURRENT GAIN IB = 600mA 3.5 3.0 IB = 200mA 2.5 2.0 IB = 100mA 1.5 1.0 o Ta = 25 C o Ta = - 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 1 1E-3 9 0.01 VCE [V], COLLECTOR-EMITTER VOLTAGE 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain o Ta = 125 C o Ta = 75 C 1 o Ta = - 25 C o Ta = 25 C 0.1 0.01 0.01 0.1 1 10 IC = 5 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC = 5 IB 10 o o Ta = - 25 C 1 o Ta = 125 C Ta = 25 C o Ta = 75 C 0.1 0.01 0.01 0.1 IC [A], COLLECTOR CURRENT 1 Figure 3. Saturation Voltage Figure 4. Saturation Voltage 0.1 tF VCC=125V tSTG & tF [us], SWITCHING TIME tSTG & tF [us], SWITCHING TIME 1 tSTG tSTG 1 tF 0.1 VCC=250V IB1=45mA, IB2=0.5A 0.01 0.1 IB1=0.5A, IB2=1.0A 1 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching ©2004 Fairchild Semiconductor Corporation 10 IC [A], COLLECTOR CURRENT 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 6. Resistive Load Switching Rev. A, June 2004 FJPF5555 Typical Characteristics (Continued) 60 55 IC [A], COLLECTOR CURRENT 50 PC[W], POWER DISSIPATION 10 VCC=50V, L=1mH IB1=3A, RB2=0 45 40 35 30 25 20 15 10 5 1 10 100 0 1000 0 VCE [V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating IC[A], COLLECTOR CURRENT 100 ICP(max) 10 100ms 10ms DC IC(max) 1 0.1 o Tc=25 C Single Pulse 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Biased Safe Operating Area ©2004 Fairchild Semiconductor Corporation Rev. A, June 2004 FJPF5555 Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11