TLP281,TLP281-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP281,TLP281-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Unit in mm TLP281 and TLP281-4 is a very small and thin coupler, suitable for surface mount assembly in applications such as PCMCIA Fax modem, programmable controllers. TLP281 and TLP281-4 consist of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. z Collector-Emitter Voltage : 80 V (MIN) z Current Transfer Ratio Rank GB : 50% (MIN) : 100% (MIN) z Isolation Voltage : 2500 Vrms (MIN) z UL Recognized : UL1577 , File No. E67349 z BSI Approved : BS EN 60065: 2002, : BS EN 60950-1: 2002 Certificate No. 8143, 8144 TOSHIBA Weight: 0.05 g ― Unit in mm Pin Configuration (top view) TLP281 TLP281-4 1 4 1 16 2 3 2 15 3 14 4 13 5 12 6 11 7 10 8 9 1:ANODE 2:CATHODE 3:EMITTER 4:COLLECTOR TOSHIBA Weight: 0.19 g ― 1,3,5,7 :ANODE 2,4,6,8 :CATHODE 9,11,13,15 :EMITTER 10,12,14,16 :COLLECTOR 1 2007-10-01 TLP281,TLP281-4 TYPE TLP281 TLP281-4 ClassiFication(*1) Current Transfer Ration (%) (IC / IF) IF = 5 mA, VCE = 5 V, Ta = 25℃ Min Max Marking of Classification ■ ■ Blank 50 600 Blank ,Y ,YE,G,G ,GR,B,BL,GB Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL Rank GB 100 600 GB Rank YH 75 150 Y Rank GRL 100 200 G Rank GRH 150 300 G Rank BLL 200 400 B Blank 50 600 Blank , GB Rank GB 100 600 GB ■ ■ *1: Ex. rank GB: TLP281 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP281 (GB): TLP281−1 , TLP281−4 (GB): TLP281−4 2 2007-10-01 TLP281,TLP281-4 Absolute Maximum Ratings (Ta = 25℃) CHARACTERISTIC SYMBOL Forward Current LED TLP281−4 IF Forward Current Derating UNIT 50 ∆IF /°C −0.7 (Ta≥53°C) mA −0.5 (Ta≥25°C) mA /°C Pulse Forward Current IFP 1 A Reverse Voltage VR 5 V Junction Temperature DETECTOR RATING TLP281 Tj 125 °C Collector-Emitter Voltage VCEO 80 V Emitter-Collector Voltage VECO 7 V IC 50 mA Collector Current Collector Power Dissipation (1 Circuit) Collector Power Dissipation Derating(Ta≥25°C) (1 Circuit) PC 150 100 mW ∆PC /°C −1.5 −1.0 mW /°C Junction Temperature Tj 125 °C Operating Temperature Range Topr −55~100 °C Storage Temperature Range Tstg −55~125 °C Lead Soldering Temperature Tsol 260 (10s) °C Total Package Power Dissipation (1 Circuit) Total Package Power Dissipation Derating (Ta≥25°C) (1 Circuit) Isolation Voltage (Note1) PT 200 170 mW ∆PT /°C −2.0 −1.7 mW /°C BVS 2500(AC,1min,R.H.≤60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note1) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together. Individual Electrical Characteristics (Ta = 25℃) LED CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF V(BR) CEO IC = 0.5 mA 80 — — V V(BR) ECO IE = 0.1 mA 7 — — V — 0.01 (2) 0.1 (10) μA — 2 (4) 50 (50) μA — 10 — pF Collector-Emitter Breakdown Voltage Emitter-Collector DETECTOR TEST CONDITION Breakdown Voltage Collector Dark Current (Note2) Capacitance (Collector to Emitter) ICEO CCE VCE = 48 V, Ambient Light Below (100 ℓx) VCE = 48 V, Ta = 85°C Ambient Light Below (100 ℓx) V = 0, f = 1 MHz (Note 2) Because of the construction,leak current might be increased by ambient light. Please use photocoupler with less ambient light. 3 2007-10-01 TLP281,TLP281-4 Coupled Electrical Characteristics (Ta = 25℃) CHARACTERISTIC SYMBOL Current Transfer Ratio Saturated CTR Collector-Emitter Saturation Voltage IC / IF IC / IF (sat) VCE (sat) TEST CONDITION MIN. TYP. MAX. 50 — 600 100 — 600 — 60 — 30 — — IC = 2.4 mA, IF = 8 mA — — 0.4 IC = 0.2 mA, IF = 1 mA — 0.2 — — — 0.4 — — 10 μA MIN. TYP. MAX. UNIT — 0.8 — pF — Ω IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB Off-State Collector Current IC (off) VF = 0.7 V, VCE = 48 V UNIT % % V Isolation Characteristics (Ta = 25℃) CHARACTERISTIC SYMBOL Capacitance (Input to Output) CS Isolation Resistance RS TEST CONDITION VS = 0 V, f = 1 MHz VS = 500 V, R.H.≤60% AC , 1 minute Isolation Voltage BVS 5×10 10 10 14 2500 — — AC , 1 second,in OIL — 5000 — DC , 1 minute, in OIL — 5000 — Vdc MIN. TYP. MAX. UNIT — 2 — — 3 — — 3 — — 3 — — 2 — — 25 — — 40 — Vrms Switching Characteristics (Ta = 25℃) CHARACTERISTIC SYMBOL Rise Time tr Fall Time tf Turn-On Time ton Turn-Off Time toff Turn-On Time tON Storage Time ts Turn-Off Time tOFF TEST CONDITION VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA μs μs (Fig.1)SWITCHING TIME TEST CIRCUIT 4 2007-10-01 TLP281,TLP281-4 TLP281 TLP281-4 TLP281 TLP281-4 5 2007-10-01 TLP281,TLP281-4 6 2007-10-01 TLP281,TLP281-4 7 2007-10-01 TLP281,TLP281-4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01