TOSHIBA TMD7185-2

MICROWAVE POWER MMIC AMPLIFIER
TMD7185-2
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n
HIGH POWER
P1dB=33.0dBm at 7.1GHz to 8.5GHz
n HIGH GAIN
G1dB=28.0dB at 7.1GHz to 8.5GHz
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain Supply Voltage
VDD
V
15
Gate Supply Voltage
VGG
V
-10
Input Power
Pin
dBm
10
Flange Temperature
Tf
°C
-30 ∼ +80
Storage Temperature
Tstg
°C
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
Output Power at 1dB Gain
P1dB
Compression Point
CONDITIONS
UNIT
MIN.
TYP. MAX.
dBm
32.0
33.0

VDD= 10V
G1dB
VGG= -5V
dB
27.0
28.0

Drain Current
IDD
f = 7.1 – 8.5GHz
A

1.4
1.7
Input VSWR
VSWRin



3.0
dBc
-42
-45

Power Gain at 1dB Gain
Compression Point
3rd Order Intermodulation
IM3
Po (S.C.L.)=22.0 dBm
Distortion
uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006
TMD7185-2
PACKAGE OUTLINE (2-11E1B)
Unit in mm
n
m
18 ± 0.2
o
2.5 MAX.
l
15 ± 0.2
p
1.0 ± 0.3
k
10 ± 0.2
q
0.5 ± 0.2
j
6 - 2.54± 0.2
2.5±0.2
0.5 ± 0.2
8- 0.4± 0.1
C2
j: No Connection
k: RF IN
l: No Connection
m: VGG
n: No Connection
o:
p:
q:
r:
RF OUT
No Connection
VDD
GND
r
7-R0.4
11.0 ± 0.2
2.0±0.5
0.1 ± 0.05
2.0±0.5
RECOMMENDED BIAS CONFIGURATION
8: VDD
3pF
2:RF Input
1-3pF
1-3pF
1,000pF
10-50µF
6:RF Output
TMD7185-2
50Ω Matching
50Ω Matching
4 : VGG
10-50µF
1,000pF
GND : Base Plate
3pF
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
Flanges of devices should be attached using screws and washers.
torque is 0.18-0.20 N·m.
2
Recommended